S E M I C O N D U C T O R
April 1995
RURU75120
75A, 1200V Ultrafast Diode
Features
•Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <125ns
•Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
•Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
•Avalanche Energy Rated
•Planar Construction
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
Description
The RURU75120 (TA49032) is an ultrafast diode with soft recovery characteristics (tRR < 125ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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RURU75120 |
TO-218 |
RURU75120 |
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NOTE: When ordering, use the entire part number.
Package
JEDEC STYLE SINGLE LEAD TO-218
ANODE
CATHODE (FLANGE) 
Symbol
K |
A |
Absolute Maximum Ratings |
TC = +25oC |
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RURU75120 |
UNITS |
Peak Repetitive Reverse Voltage . . . . . |
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1200 |
V |
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Working Peak Reverse Voltage . . . . . . |
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1200 |
V |
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DC Blocking Voltage. . . . . . . . . . . . . . . . |
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VR |
1200 |
V |
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Average Rectified Forward Current . . . . |
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75 |
A |
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(TC = +56.75oC) |
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Repetitive Peak Surge Current. . . . . . . . |
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150 |
A |
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(Square Wave, 20kHz) |
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Nonrepetitive Peak Surge Current . . . . . |
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500 |
A |
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(Halfwave, 1 Phase, 60Hz) |
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Maximum Power Dissipation . . . . . . . . . |
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PD |
190 |
W |
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Avalanche Energy (L = 40mH) . . . . . . . . |
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50 |
mj |
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Operating and Storage Temperature . . . |
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, T |
J |
-65 to +175 |
oC |
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STG |
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Copyright © Harris Corporation 1995
File Number 3413.2
5-109
Specifications RURU75120
Electrical Specifications |
TC = +25oC, Unless Otherwise Specified |
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LIMITS |
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TEST |
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SYMBOL |
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CONDITION |
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MIN |
TYP |
MAX |
UNITS |
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VF |
IF = 75A |
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- |
- |
2.1 |
V |
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VF |
IF = 75A |
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TC = +150oC |
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- |
- |
1.9 |
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IR |
VR = 1200V |
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- |
- |
500 |
μA |
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I |
V |
R |
= 1200V |
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T |
C |
= +150oC |
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- |
2 |
mA |
R |
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tRR |
IF = 1A, dIF/dt = 100A/μs |
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- |
- |
125 |
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tRR |
IF = 75A, dIF/dt = 100A/μs |
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- |
- |
200 |
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tA |
IF = 75A, dIF/dt = 100A/μs |
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- |
90 |
- |
ns |
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tB |
IF = 75A, dIF/dt = 100A/μs |
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- |
65 |
- |
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RθJC |
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- |
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0.8 |
oC/W |
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300μs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF |
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V2 AMPLITUDE CONTROLS dIF/dt |
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+V3 |
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L |
= SELF INDUCTANCE OF |
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1 |
R4 + LLOOP |
R1 |
Q2 |
t1 ³ 5tA(MAX) |
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t2 > tRR |
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Q1 |
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t3 > 0 |
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L1 £ tA(MIN) |
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+V1 |
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0 |
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R4 |
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10 |
dIF |
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tRR |
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LLOOP |
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IF |
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t2 |
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dt |
tA |
tB |
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t1 |
R2 |
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DUT |
0 |
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Q4 |
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0.25 IRM |
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t3 |
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IRM |
0 |
C1 |
R4 |
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VR |
Q3 |
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-V2 |
R3 |
-V4 |
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VRM |
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FIGURE 1. tRR TEST CIRCUIT |
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS |
5-110
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RURU75120 |
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Typical Performance Curves |
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FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD |
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE |
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VOLTAGE DROP |
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FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD |
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES |
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CURRENT |
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IMAX = 1A |
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L = 40mH |
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R < 0.1Ω |
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EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] |
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Q1 AND Q2 ARE 1000V MOSFETs |
L |
R |
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Q1 |
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+ |
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VDD |
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130Ω |
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1MΩ |
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DUT |
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Q2 |
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VAVL |
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12V |
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CURRENT |
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IL |
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IL |
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130Ω |
SENSE |
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I V |
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VDD |
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- |
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12V |
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t0 |
t1 |
t2 |
t |
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FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT |
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FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVE- |
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FORMS |
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5-111 |
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