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RURU5070

.PDF

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S E M I C O N D U C T O R

April 1995

RURU5070, RURU5080, RURU5090, RURU50100

50A, 700V - 1000V Ultrafast Diodes

Features

• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . .1000V

•Avalanche Energy Rated

•Planar Construction

Applications

•Switching Power Supplies

•Power Switching Circuits

•General Purpose

Description

RURU5070, RURU5080, RURU5090 and RURU50100 (TA9910) are ultrafast diodes with soft recovery characteristics (tRR < 125ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectiﬁers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

RURU5070	TO-218	RURU5070

RURU5080	TO-218	RURU5080

RURU5090	TO-218	RURU5090

RURU50100	TO-218	RURU50100

NOTE: When ordering, use the entire part number.

Package

JEDEC STYLE SINGLE LEAD TO-218

ANODE

CATHODE (FLANGE)

Symbol


	Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed
					RURU5070	RURU5080	RURU5090	RURU50100	UNITS
	Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . .	. . VRRM			700	800	900	1000	V
	Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . .	. .VRWM			700	800	900	1000	V
	DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	VR		700	800	900	1000	V
	Average Rectified Forward Current . . . . . . . . . . . . . . . . . . .	. . IF(AV)			50	50	50	50	A
	(TC = +88.6oC)
	Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . .	. . . IFSM			100	100	100	100	A
	(Square Wave, 20kHz)
	Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . .	. . . IFSM			500	500	500	500	A
	(Halfwave, 1 Phase, 60Hz)
	Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	PD		150	150	150	150	W
	Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . .	. . .EAVL			40	40	40	40	mj
	Operating and Storage Temperature . . . . . . . . . . . . . . . . . .	T	, T	J	-65 to +175	-65 to +175	-65 to +175	-65 to +175	oC
		STG		J


Copyright © Harris Corporation 1995								File Number	3376.2

5-102

Speciﬁcations RURU5070, RURU5080, RURU5090, RURU50100

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

															LIMITS

										RURU5070			RURU5080			RURU5090			RURU50100

SYMBOL							TEST CONDITION			MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	UNITS

VF			IF = 50A							-	-	1.9	-	-	1.9	-	-	1.9	-	-	1.9	V
V		F	I	F		= 50A, T = 150oC				-	-	1.7	-	-	1.7	-	-	1.7	-	-	1.7	V
		F		F			C
IR			VR				= 700V			-	-	500	-	-	-	-	-	-	-	-	-	μA
			VR				= 800V			-	-	-	-	-	500	-	-	-	-	-	-	μA
			VR				= 900V			-	-	-	-	-	-	-	-	500	-	-	-	μA
			VR				= 1000V			-	-	-	-	-	-	-	-	-	-	-	500	μA
I	R		V		R		= 700V, T	= 150oC		-	-	1.5	-	-	-	-	-	-	-	-	-	mA
	R				R		C
			V		R		= 800V, T	= 150oC		-	-	-	-	-	1.5	-	-	-	-	-	-	mA
					R		C
			V		R		= 900V, T	= 150oC		-	-	-	-	-	-	-	-	1.5	-	-	-	mA
					R		C
			V		R		= 1000V, T		= 150oC	-	-	-	-	-	-	-	-	-	-	-	1.5	mA
					R		C
tRR			IF = 1A, dIF/dt = 100A/μs							-	-	125	-	-	125	-	-	125	-	-	125	ns
			IF = 50A, dIF/dt = 100A/μs							-	-	200	-	-	200	-	-	200	-	-	200	ns
tA			IF = 50A, dIF/dt = 100A/μs							-	110	-	-	110	-	-	110	-	-	110	-	ns
tB			IF = 50A, dIF/dt = 100A/μs							-	65	-	-	65	-	-	65	-	-	65	-	ns
RθJC										-	-	1.0	-	-	1.0	-	-	1.0	-	-	1.0	oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300μs, D = 2%).

IR = Instantaneous reverse current.

tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).

tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

RθJC = Thermal resistance junction to case.

EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width.

D = duty cycle.

V1 AMPLITUDE CONTROLS IF			+V3
V2 AMPLITUDE CONTROLS dIF/dt			t1 ³ 5tA(MAX)
	R1	Q2	t1 ³ 5tA(MAX)
L1 = SELF INDUCTANCE OF R4		Q2	t2 > tRR
+ LLOOP			t2 > tRR
+ LLOOP	Q1		t3 > 0
+V1	Q1		L1 £ tA(MIN)
+V1			L1 £ tA(MIN)
0			R4	10		tRR
0			LLOOP	dIF		tRR
	t2		LLOOP	IF	tA	tB
	t2			dt	tA	tB
t1	R2		DUT	0
t1			DUT
			Q4			0.25 IRM
	t3					0.25 IRM
	t3					I
			R4			RM
0	C1		R4
0	Q3
	Q3
-V2	R3		-V4			VR
	R3					VR
					VRM

FIGURE 1. tRR TEST CIRCUIT

FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

5-103

RURU5070, RURU5080, RURU5090, RURU50100

Typical Performance Curves

FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD

FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE

VOLTAGE DROP

FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD

FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES

CURRENT

IMAX = 1A

L = 40mH

R < 0.1Ω

= 1/2LI2

/(V

- V

)]

AVL

Q1 & Q2 ARE 1000V MOSFETs

VDD

130Ω

1MΩ

DUT

VAVL

12V

130Ω

CURRENT

SENSE

VDD

12V

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT

FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS

5-104

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