S E M I C O N D U C T O R
April 1995
RURU5040, RURU5050, RURU5060
50A, 400V - 600V Ultrafast Diodes
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
•Avalanche Energy Rated
•Planar Construction
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
Description
RURU5040, RURU5050 and RURU5060 (TA9909) are ultrafast diodes with soft recovery characteristics (tRR < 65ns). They have low forward voltage drop and are silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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RURU5040 |
TO-218 |
RURU5040 |
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RURU5050 |
TO-218 |
RURU5050 |
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RURU5060 |
TO-218 |
RURU5060 |
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NOTE: When ordering, use the entire part number.
Package
JEDEC STYLE SINGLE LEAD TO-218
ANODE
CATHODE (FLANGE)
Symbol
K |
A |
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Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified |
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RURU5040 |
RURU5050 |
RURU5060 |
UNITS |
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . VRRM |
400 |
500 |
600 |
V |
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Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . VRWM |
400 |
500 |
600 |
V |
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DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . |
VR |
400 |
500 |
600 |
V |
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Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . |
. . .IF(AV) |
50 |
50 |
50 |
A |
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(TC = +102oC) |
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Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . IFSM |
100 |
100 |
100 |
A |
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(Square Wave, 20kHz) |
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Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . IFSM |
500 |
500 |
500 |
A |
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(Halfwave, 1 Phase, 60Hz) |
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Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . |
PD |
150 |
150 |
150 |
W |
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Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . EAVL |
40 |
40 |
40 |
mj |
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Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . |
T |
, T |
J |
-65 to +175 |
-65 to +175 |
-65 to +175 |
oC |
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STG |
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Copyright © Harris Corporation 1995 |
File Number 2940.2 |
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5-99 |
Specifications RURU5040, RURU5050, RURU5060
Electrical Specifications |
TC = +25oC, Unless Otherwise Specified |
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LIMITS |
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RURU5040 |
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RURU5050 |
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RURU5060 |
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SYMBOL |
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TEST CONDITION |
MIN |
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TYP |
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MAX |
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MIN |
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TYP |
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MAX |
MIN |
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TYP |
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MAX |
UNITS |
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V |
I |
F |
= 50A, T |
C |
= +25oC |
- |
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- |
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1.6 |
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- |
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- |
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1.6 |
- |
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1.6 |
V |
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F |
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VF |
IF = 50A, TC = +150oC |
- |
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- |
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1.4 |
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- |
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- |
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1.4 |
- |
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- |
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1.4 |
V |
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I |
R |
V |
R |
= 400V, T |
= +25oC |
- |
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- |
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500 |
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- |
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- |
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- |
- |
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- |
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- |
μA |
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C |
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V |
R |
= 500V, T |
= +25oC |
- |
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- |
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- |
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- |
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- |
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500 |
- |
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- |
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- |
μA |
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C |
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V |
R |
= 600V, T |
= +25oC |
- |
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- |
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- |
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- |
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- |
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- |
- |
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- |
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500 |
μA |
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C |
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I |
R |
V |
R |
= 400V, T |
= +150oC |
- |
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- |
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1.5 |
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- |
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- |
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- |
- |
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- |
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- |
mA |
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C |
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V |
R |
= 500V, T |
= +150oC |
- |
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- |
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- |
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- |
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- |
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1.5 |
- |
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- |
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- |
mA |
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C |
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V |
R |
= 600V, T |
= +150oC |
- |
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- |
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- |
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- |
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- |
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- |
- |
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- |
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1.5 |
mA |
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C |
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tRR |
IF = 1A, dIF/dt = 100A/μs |
- |
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- |
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65 |
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- |
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- |
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65 |
- |
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- |
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65 |
ns |
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IF = 50A, dIF/dt = 100A/μs |
- |
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- |
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75 |
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- |
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- |
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75 |
- |
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- |
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75 |
ns |
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tA |
IF = 50A, dIF/dt = 100A/μs |
- |
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30 |
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- |
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- |
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30 |
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- |
- |
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30 |
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- |
ns |
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tB |
IF = 50A, dIF/dt = 100A/μs |
- |
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20 |
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- |
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- |
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20 |
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- |
- |
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20 |
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- |
ns |
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RθJC |
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- |
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- |
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1 |
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- |
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- |
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1 |
- |
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- |
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1 |
oC/W |
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DEFINITIONS
VF = Instantaneous forward voltage (pw = 300μs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF |
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+V3 |
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V2 AMPLITUDE CONTROLS dIF/dt |
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t1 ³ 5tA(MAX) |
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R1 |
Q2 |
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L1 = SELF INDUCTANCE OF R4 |
t2 > tRR |
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+ LLOOP |
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Q1 |
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t3 > 0 |
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+V1 |
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L1 £ tA(MIN) |
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0 |
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R4 |
10 |
dIF |
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tRR |
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LLOOP |
IF |
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t2 |
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dt |
tA |
tB |
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t1 |
R2 |
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DUT |
0 |
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Q4 |
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0.25 IRM |
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t3 |
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I |
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R4 |
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RM |
0 |
C1 |
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Q3 |
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-V2 |
R3 |
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-V4 |
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VR |
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VRM |
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FIGURE 1. tRR TEST CIRCUIT |
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS |
5-100
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RURU5040, RURU5050, RURU5060 |
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Typical Performance Curves |
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FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD |
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE |
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VOLTAGE DROP |
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FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD |
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES |
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CURRENT |
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IMAX = 1A |
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L = 40mH |
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R < 0.1Ω |
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E |
= 1/2LI2 |
[V |
/(V |
- V |
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AVL |
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AVL |
AVL |
DD |
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Q1 & Q2 ARE 1000V MOSFETs |
Q |
L |
R |
+ |
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1 |
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VDD |
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130Ω |
1MΩ |
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DUT |
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VAVL |
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12V |
Q |
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2 |
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130Ω |
CURRENT |
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IL |
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SENSE |
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I V |
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VDD |
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- |
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12V |
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t0 |
t1 |
t2 |
t |
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FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT |
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FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS |
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5-101 |
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