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RURU8070

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S E M I C O N D U C T O R

April 1995

RURU8070, RURU8080, RURU8090, RURU80100

80A, 700V - 1000V Ultrafast Diodes

Features

• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . .1000V

•Avalanche Energy Rated

•Planar Construction

Applications

•Switching Power Supplies

•Power Switching Circuits

•General Purpose

Description

RURU8070, RURU8080, RURU8090 and RURU80100 (TA9887) are ultrafast diodes with soft recovery characteristics (tRR < 125ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectiﬁers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

RURU8070	TO-218	RURU8070

RURU8080	TO-218	RURU8080

RURU8090	TO-218	RURU8090

RURU80100	TO-218	RURU80100

NOTE: When ordering, use the entire part number.

Package

JEDEC STYLE SINGLE LEAD TO-218

ANODE

CATHODE (FLANGE)

Symbol

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed
				RURU8070	RURU8080	RURU8090	RURU80100	UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . .	. . VRRM			700	800	900	1000	V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . .	. .VRWM			700	800	900	1000	V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	VR		700	800	900	1000	V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . .	. . IF(AV)			80	80	80	80	A
(TC = +59oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . .	. . . IFSM			160	160	160	160	A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . .	. . . IFSM			500	500	500	500	A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	PD		180	180	180	180	W
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . .	. . .EAVL			50	50	50	50	mj
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .	T	, T	J	-65 to +175	-65 to +175	-65 to +175	-65 to +175	oC
	STG		J

Copyright © Harris Corporation 1995							File Number	3375.2

5-115

Speciﬁcations RURU8070, RURU8080, RURU8090, RURU80100

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

															LIMITS

										RURU8070			RURU8080			RURU8090			RURU80100

SYMBOL							TEST CONDITION			MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	UNITS

VF			IF = 80A							-	-	1.9	-	-	1.9	-	-	1.9	-	-	1.9	V
V		F	I	F		= 80A, T = 150oC				-	-	1.7	-	-	1.7	-	-	1.7	-	-	1.7	V
		F		F			C
IR			VR				= 700V			-	-	500	-	-	-	-	-	-	-	-	-	μA
			VR				= 800V			-	-	-	-	-	500	-	-	-	-	-	-	μA
			VR				= 900V			-	-	-	-	-	-	-	-	500	-	-	-	μA
			VR				= 1000V			-	-	-	-	-	-	-	-	-	-	-	500	μA
I	R		V		R		= 700V, T	= 150oC		-	-	2	-	-	-	-	-	-	-	-	-	mA
	R				R		C
			V		R		= 800V, T	= 150oC		-	-	-	-	-	2	-	-	-	-	-	-	mA
					R		C
			V		R		= 900V, T	= 150oC		-	-	-	-	-	-	-	-	2	-	-	-	mA
					R		C
			V		R		= 1000V, T		= 150oC	-	-	-	-	-	-	-	-	-	-	-	2	mA
					R		C
tRR			IF = 1A, dIF/dt = 100A/μs							-	-	125	-	-	125	-	-	125	-	-	125	ns
			IF = 80A, dIF/dt = 100A/μs							-	-	200	-	-	200	-	-	200	-	-	200	ns
tA			IF = 80A, dIF/dt = 100A/μs							-	90	-	-	90	-	-	90	-	-	90	-	ns
tB			IF = 80A, dIF/dt = 100A/μs							-	65	-	-	65	-	-	65	-	-	65	-	ns
RθJC										-	-	0.83	-	-	0.83	-	-	0.83	-	-	0.83	oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300μs, D = 2%).

IR = Instantaneous reverse current.

tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).

tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

RθJC = Thermal resistance junction to case.

EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width.

D = duty cycle.

V1 AMPLITUDE CONTROLS IF			+V3
V2 AMPLITUDE CONTROLS dIF/dt			t1 ³ 5tA(MAX)
	R1	Q2	t1 ³ 5tA(MAX)
L1 = SELF INDUCTANCE OF R4		Q2	t2 > tRR
+ LLOOP			t2 > tRR
+ LLOOP	Q1		t3 > 0
+V1	Q1		L1 £ tA(MIN)
+V1			L1 £ tA(MIN)
0			R4	10		tRR
0			LLOOP	dIF		tRR
	t2		LLOOP	IF	tA	tB
	t2			dt	tA	tB
t1	R2		DUT	0
t1			DUT
			Q4			0.25 IRM
	t3					0.25 IRM
	t3					I
			R4			RM
0	C1		R4
0	Q3
	Q3
-V2	R3		-V4			VR
	R3					VR
					VRM

FIGURE 1. tRR TEST CIRCUIT

FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

5-116

	RURU8070, RURU8080, RURU8090, RURU80100
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD					FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
VOLTAGE DROP
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD					FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
CURRENT
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]		L
Q1 & Q2 ARE 1000V MOSFETs	Q	L	R	+
	1			VDD
				VDD
	130Ω
	1MΩ
		DUT				VAVL
	Q2					VAVL
12V	Q2
	130Ω	CURRENT			IL	IL
	130Ω	SENSE			I V
					I V
				VDD
				-
12V					t0	t1	t2	t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT					FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
				5-117

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