Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

HGTG40N6

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

67.09 Кб

Скачать

☆

S E M I C O N D U C T O R HGTG40N60B3

PRELIMINARY

May 1995

70A, 600V, UFS Series N-Channel IGBT

Features

•70A, 600V at TC = +25oC

•Square Switching SOA Capability

•Typical Fall Time - 160ns at +150oC

•Short Circuit Rating

•Low Conduction Loss

Description

The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

HGTG40N60B3	TO-247	G40N60B3

NOTE: When ordering, use the entire part number.

Formerly Developmental Type TA49052

Package

JEDEC STYLE TO-247

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed
					HGTG40N60B3	UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. BVCES		600	V
Collector-Gate Voltage, RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. BVCGR		600	V
Collector Current Continuous
At TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. IC25	70	A
At T	C	= +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. .	. I	40	A
	C			C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. . ICM	330	A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	VGES	±20	V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	VGEM	±30	V
Switching Safe Operating Area at TC = +150oC. . . . . . . . . . . . . . . . . . . . . . . . . .			. .	SSOA	160A at 0.8 BVCES
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. . PD	290	W
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. . . . .	2.33	W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .			T	, T	-40 to +150	oC
			J	STG		oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. . . TL	260	oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . .			. .	. . tSC	2	μs
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . .			. .	. . tSC	10	μs

NOTE:

1.Repetitive Rating: Pulse width limited by maximum junction temperature.

2.VCE(PK) = 360V, TC = +125oC, RGE = 25Ω.

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.	File Number	3943

9-3

Speciﬁcations HGTG40N60B3

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

LIMITS

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector-Emitter Breakdown Voltage

BVCES

ICE = 250μA, VGE = 0V

600

Collector-Emitter Leakage Current

ICES

VCE = BVCES

TJ = +25oC

250

µA

VCE = BVCES

TJ = +150oC

7.5

Collector-Emitter Saturation Voltage

= 40A

= +25oC

1.4

2.0

CE(SAT)

VGE = 15V

TJ = +150oC

1.5

2.3

Gate-Emitter Threshold Voltage

VGE(TH)

ICE = 250A,

TJ = +25oC

3.0

6.0

VCE = VGE

Gate-Emitter Leakage Current

IGES

VGE = ±20V

±300

Latching Current

= +150oC

160

VCE(PK) = 0.8 BVCES

VGE = 15V

RG = 3Ω

L = 45μH

Gate-Emitter Plateau Voltage

VGEP

ICE = 40A, VCE = 0.5 BVCES

8.0

On-State Gate Charge

QG(ON)

ICE = 40A,

VGE = 15V

240

320

VCE = 0.5 BVCES

VGE = 20V

350

450

Current Turn-On Delay Time

tD(ON)I

TJ = +150oC

ICE = 40A

Current Rise Time

tRI

VCE(PK) = 0.8 BVCES

VGE = 15V

Current Turn-Off Delay Time

tD(OFF)I

RG = 3Ω

350

435

L = 100μH

Current Fall Time

tFI

160

200

Turn-On Energy

EON

1400

µJ

Turn-Off Energy (Note 1)

EOFF

3300

µJ

Thermal Resistance

RθJC

0.43

oC/W

NOTE:

1.Turn-Off Energy Loss (EOFF) is deﬁned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073	4,417,385	4,430,792	4,443,931	4,466,176	4,516,143	4,532,534	4,567,641
4,587,713	4,598,461	4,605,948	4,618,872	4,620,211	4,631,564	4,639,754	4,639,762
4,641,162	4,644,637	4,682,195	4,684,413	4,694,313	4,717,679	4,743,952	4,783,690
4,794,432	4,801,986	4,803,533	4,809,045	4,809,047	4,810,665	4,823,176	4,837,606
4,860,080	4,883,767	4,888,627	4,890,143	4,901,127	4,904,609	4,933,740	4,963,951
4,969,027

9-4

								HGTG40N60B3
Typical Performance Curves
				μ						PULSE DURATION = 250μs, DUTY CYCLE <0.5%, T										= +25oC
	PULSE DURATION = 250 s, DUTY CYCLE <0.5%, VCE = 10V									200									C
COLLECTOR-EMITTER CURRENT (A)	200								,COLLECTOR-EMITTER CURRENT (A)	200
	180									180					VGE = 15V			12V	10V
	160									160					VGE = 15V			12V	10V
	160									160
	140									140									9.5V
	140	T		= +150oC						140
	120	T	C	= +150oC						120
			C
																			9V
	100									100									9V
	100		TC = +25oC							100
	80		TC = +25oC							80
	80									80									8.5V
																			8.5V
	60		TC = -40oC							60									8.0V
	40		TC = -40oC							40									8.0V
	40									40									7.5V
										20									7.5V
	20
,									CE										7.0V
,									CE										7.0V
CE									I
I	0									0
										0
										0	0.5	1	1.5		2	2.5	3	3.5	4	4.5	5
	0	2		4	6	8	10	12		0	0.5	1	1.5		2	2.5	3	3.5	4	4.5	5
	0	2		4	6	8	10	12
		VGE, GATE-TO-EMITTER VOLTAGE (V)									VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
		FIGURE 1. TRANSFER CHARACTERISTICS								FIGURE 2. SATURATION CHARACTERISTICS
	100									PULSE DURATION = 250μs, DUTY CYCLE <0.5%, VGE = 15V
	100								(A)	200
COLLECTOR CURRENT (A)	90	DIE LIMIT							(A)
	90	DIE LIMIT							-EMITTER CURRENT
	80						VGE = 15V			150
	70						VGE = 15V			150				TC = -40oC					TC = +25oC
	70													TC = -40oC					TC = +25oC
	60	PACKAGE LIMIT
	50									100
	40																TC = +150oC
	30									50

DC	20								COLLECTOR,
DC	20
,
CE	10
I	10
									CE
	0								I	0
	0									0
	25	50		75		100	125	150		0		1				2		3			4
							o				VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
		TC , CASE TEMPERATURE ( C)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE										FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
						FREQUENCY = 1MHz				600		IG(REF) = 4.06mA, RL = 7.5Ω, TC = +25oC
									(V)	600										20
	14								(V)
	14								COLLECTOR - EMITTER VOLTAGE												(V)
																					(V)
	12									450										15	VOLTAGE
C, CAPACITANCE (nF)				CISS						450			BVCE = 600V							15
	10			CISS									BVCE = 600V
	10

	8									300										10	EMITTER
										300										10
	6
																					-
	4									150						BVCE = 400V				5	, GATE
	4			COSS
															BVCE = 200V
															BVCE = 200V
	2																				GE
	2																				V
				CRSS					,
				CRSS					CE
	0	5		10		15	20	25	V	0										0
	0									0										0
	0									0		50			100	150		200		250
										0		50			100	150		200		250
		VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)										Q	G	, GATE CHARGE (nC)
													G
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE											FIGURE 6. GATE CHARGE WAVEFORMS
								9-5

HGTG40N60B3

Typical Performance Curves (Continued)

	100				TJ = +150oC, RG = 3Ω, L = 100μH
	100
(ns)	70
TIME	50
DELAY	50
DELAY
TURN-ON	30
TURN-ON	20
,
D(ON)I
t
	10
	10	20	30	40	50	60	70	80	90	100
			ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT

	100				TJ = +150oC, RG = 3Ω, L = 100μH
	100
(ns)	70
(ns)
TIME	50
TIME
RISE						VCE(PK) = 480V, VGE = 15V
RISE	30
-ON	30
-ON
TURN	20
TURN
,
RI
t
	10
	10	20	30	40	50	60	70	80	90	100
			ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT

	6				TJ = +150oC, RG = 3Ω, L = 100μH
	6
(mJ)	5
LOSS	5
LOSS	4
-ON ENERGY	4
		VCE(PK) = 480V, VGE = 15V
	3
	2
, TURN	2
, TURN	1
ON	1
ON
E
	10	20	30	40	50	60	70	80	90	100
			ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF

COLLECTOR-EMITTER CURRENT

	400				TJ = +150oC, RG = 3Ω, L = 100μH
	400
(ns)
TIME	350
TIME
OFF DELAY	300
OFF DELAY			VCE(PK) = 480V, VGE = 15V
-
, TURN	250
, TURN
D(OFF)I
t
	200
	10	20	30	40	50	60	70	80	90	100
			ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF

COLLECTOR-EMITTER CURRENT

TJ = +150oC, RG = 3Ω, L = 100μH

	1000
	500



(ns)	300


	200

TIME
	100
			VCE(PK) = 480V, VGE = 15V
, FALL

	50



FI
FI
t	30


	20
	20
	10
	10	40	60	80	100
	20	40	60	80	100

ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT

	10				TJ = +150oC, RG = 3Ω, L = 100μH
	10
(mJ)
LOSS	8
LOSS
ENERGY	6	VCE(PK) = 480V, VGE = 15V
	6

, TURN-OFF	4
, TURN-OFF	2
OFF
E
	0
	10	20	30	40	50	60	70	80	90	100
			ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF

COLLECTOR-EMITTER CURRENT

9-6

								HGTG40N60B3
Typical Performance Curves (Continued)
		T = +150oC, T		C	= +75oC, V	GE	= +15V, R = 3Ω, L = 100μH						T	C	= +150oC, V		GE	= 15V, R = 3Ω, L = 45μH
	200	J		C		GE	G				200			C			GE		G
	200									-EMITTER CURRENT (A)	200
, OPERATING FREQUENCY (kHz)	100
											160
	50
	20										120
	20
	10	fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)									80
		fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)									80
	5	fMAX2 = (PD - PC)/(EON + EOFF)
	5	PD = ALLOWABLE DISSIPATION
		PD = ALLOWABLE DISSIPATION									40
		PC = CONDUCTION DISSIPATION									40
MAX	2		(DUTY FACTOR = 50%)							COLLECTOR,
MAX		RθJC	= 0.43oC/W							COLLECTOR,
f		RθJC	= 0.43oC/W							CE	0
	1									I

					30						0	100	200			300		400	500	600
	10		20		30		50	70	100		0	100	200			300		400	500	600
			ICE, COLLECTOR-EMITTER CURRENT (A)									VCE, COLLECTOR-EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF											FIGURE 14. SWITCHING SAFE OPERATING AREA
		COLLECTOR-EMITTER CURRENT
	THERMAL	100
			0.5
		C/W)	0.2
	NORMALIZED	o	0.2
		10-1	0.1									PD
		10-1										PD
		RESPONSE(	0.05
		RESPONSE(											t1
	,												t1			t2
	JC		0.02									NOTES:				t2
	θ
	Z
	Z		0.01				SINGLE PULSE					DUTY FACTOR, D = t1 /t2
			0.01				SINGLE PULSE					DUTY FACTOR, D = t1 /t2
		10-2										PEAK TJ = (PD X ZθJC X RθJC) + TC
		10-2
		10-5			10-4			10-3		10-2		10-1					100		101
								t1 , RECTANGULAR PULSE DURATION (s)
			FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveforms
						L = 100μH										90%
						L = 100μH
										VGE								10%
							RHRP3060			VGE
							RHRP3060
																EOFF	EON
		RG = 3Ω								VCE
												90%
							+					10%
								VDD = 480V		ICE		10%
							-	VDD = 480V		ICE		tD(OFF)I							tRI
							-					tD(OFF)I	tFI						tRI
													tFI					tD(ON)I
																		tD(ON)I
	FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT										FIGURE 17. SWITCHING TEST WAVEFORMS
										9-7

HGTG40N60B3

Operating Frequency Information

Handling Precautions for IGBT’s

Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a speciﬁc application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.

fMAX1 is deﬁned by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of

the on-state time for a 50% duty factor. Other deﬁnitions are possible. tD(OFF)I and tD(ON)I are deﬁned in Figure 17.

Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX.

tD(OFF)I is important when controlling output ripple under a lightly loaded condition.

fMAX2 is deﬁned by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is deﬁned by PD = (TJMAX - TC)/RθJC.

The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2.

EON and EOFF are deﬁned in the switching waveforms shown in Figure 17. EON is the integral of the instantaneous

power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-

off. All tail losses are included in the calculation of EOFF; i.e.the collector current equals zero (ICE = 0).

Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT’s are currently being extensively used in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT’s can be handled safely if the following basic precautions are taken:

1.Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as † ”ECCOSORBD LD26” or equivalent.

2.When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband.

3.Tips of soldering irons should be grounded.

4.Devices should never be inserted into or removed from circuits with power on.

5.Gate Voltage Rating - Never exceed the gate-voltage rat-

ing of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region.

6.Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-cir- cuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.

7.Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.

†Trademark Emerson and Cumming, Inc.

9-8