S E M I C O N D U C T O R
April 1995
2N6975, 2N6976, 2N6977, 2N6978
5A, 400V and 500V N-Channel IGBTs
Features
•5A, 400V and 500V
•VCE(ON) 2V
•TFI 1μs, 0.5μs
•Low On-State Voltage
•Fast Switching Speeds
•High Input Impedance
Applications
•Power Supplies
•Motor Drives
•Protection Circuits
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.
Package
JEDEC TO-204AA
BOTTOM VIEW
EMITTER |
COLLECTOR |
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(FLANGE) |
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GATE |
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Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
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G |
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PACKAGING AVAILABILITY |
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PART NUMBER |
PACKAGE |
BRAND |
2N6975 |
TO-204AA |
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2N6976 |
TO-204AA |
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2N6977 |
TO-204AA |
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2N6978 |
TO-204AA |
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NOTE: When ordering, use the entire part number.
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Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified. |
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2N6975/2N6977 |
2N6976/2N6978 |
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(Note 1) |
(Note 1) |
UNITS |
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Collector-Emitter Voltage . . . . . . . . . . |
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. VCES |
400 |
500 |
V |
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Collector-Gate Voltage (RGE = 1MΩ) . . |
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.VCGR |
400 |
500 |
V |
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Reverse Collector-Emitter Voltage . . . . |
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.VCES(REV.) |
5 |
5 |
V |
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Gate-Emitter Voltage . . . . . . . . . . . . . . |
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. .VGE |
±20 |
±20 |
V |
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Collector Current Continuous . . . . . . . . |
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. . . IC |
5 |
5 |
A |
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Collector Current Pulsed . . . . . . . . . . . |
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. . ICM |
10 |
10 |
A |
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Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . |
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. . . PD |
100 |
100 |
W |
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Power Dissipation Derating TC > +25oC |
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0.8 |
0.8 |
W/oC |
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Operating and Storage Junction Temperature Range . . |
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. . T |
, T |
-55 to +150 |
-55 to +150 |
oC |
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J |
STG |
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NOTE: |
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1. JEDEC registered value. |
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HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: |
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4,364,073 |
4,417,385 |
4,430,792 |
4,443,931 |
4,466,176 |
4,516,143 |
4,532,534 |
4,567,641 |
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4,587,713 |
4,598,461 |
4,605,948 |
4,618,872 |
4,620,211 |
4,631,564 |
4,639,754 |
4,639,762 |
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4,641,162 |
4,644,637 |
4,682,195 |
4,684,413 |
4,694,313 |
4,717,679 |
4,743,952 |
4,783,690 |
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4,794,432 |
4,801,986 |
4,803,533 |
4,809,045 |
4,809,047 |
4,810,665 |
4,823,176 |
4,837,606 |
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4,860,080 |
4,883,767 |
4,888,627 |
4,890,143 |
4,901,127 |
4,904,609 |
4,933,740 |
4,963,951 |
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4,969,027 |
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CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. |
File Number 2297.2 |
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Copyright © Harris Corporation 1995
3-1
Specifications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specifications |
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TC = +25° C, Unless Otherwise Specified |
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LIMITS |
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2N6975/2N6977 |
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2N6976/2N6978 |
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PARAMETERS |
SYMBOL |
TEST CONDITIONS |
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MIN |
MAX |
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MIN |
MAX |
UNITS |
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Collector-Emitter |
BVCES |
lC = 1 mA, VGE = 0 |
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400 |
-° |
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500 |
- |
V |
Breakdown Voltage |
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(Note 1) |
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(Note 1) |
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Gate Threshold Voltage |
VGE(TH) |
VGE = VCE, IC = 1mA |
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2° |
4.5 |
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2 |
4.5° |
V |
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(Note 1) |
(Note 1) |
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(Note 1) |
(Note 1) |
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Zero Gate Voltage Collector |
lCES |
VCE = 400V |
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250 |
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μA |
Current |
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(Note 1) |
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VCE = 500V |
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- |
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250 |
μA |
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(Note 1) |
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TC = +125oC |
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- |
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- |
- |
μA |
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VCE = 400V |
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- |
°1000 |
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- |
μA |
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(Note 1) |
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VCE = 500V |
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- |
- |
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1000 |
μA |
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(Note 1) |
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Gate-Emitter Leakage Current |
IGES |
VGE = ±20V, VCE = 0V |
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100 |
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100 |
ns |
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(Note 1) |
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(Note 1) |
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Reverse Collector-Emitter |
IECS |
RGE = 0Ω, VEC = 5V |
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5 |
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5 |
mA |
Leakage Current |
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(Note 1) |
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(Note 1) |
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Collector-Emitter On Voltage |
VCE(ON) |
IC = 5A, VGE = 10V |
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2 |
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2 |
V |
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(Note 1) |
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(Note 1) |
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IC = 10A, VGE = 20V |
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2.5 |
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2.5 |
V |
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Gate-Emitter Plateau Voltage |
VGEP |
IC = 5A, VCE = 10V |
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3.4 |
6.8 |
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3.4 |
6.8 |
V |
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(Note 1) |
(Note 1) |
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(Note 1) |
(Note 1) |
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On-State Gate Charge |
QG(ON) |
IC = 5A, VCE = 10V |
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12 |
25 |
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12 |
25 |
nC |
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(Note 1) |
(Note 1) |
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(Note 1) |
(Note 1) |
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Turn-On Delay Time |
tD(ON) |
IC = 5A |
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50 Max |
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VCE(CLP) = 300V |
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Rise Time |
tR |
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50 Max |
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ns |
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L = 50μH |
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TJ = +125oC |
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Turn-Off Delay Time |
tD(ON) |
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400 Max |
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VGE = 10V |
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(Note 1) |
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RG = 50Ω |
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Fall Time |
tFI |
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2N6975 |
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1000 Max |
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ns |
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2N6976 |
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(Note 1) |
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2N6977 |
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500 Max |
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ns |
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2N6978 |
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(Note 1) |
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Turn-Off |
WOFF |
IC = 5A |
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2N6975 |
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1000 Max |
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μJ |
Energy Loss per Cycle |
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VCE(CLP) = 300V |
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2N6976 |
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(Note 1) |
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(Off Switching Dissipation= |
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L = 50μH |
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2N6977 |
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500 Max |
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μJ |
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WOFF x Frequency) |
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TJ = +125oC |
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VGE = 10V |
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2N6978 |
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(Note 1) |
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RG = 50Ω |
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Thermal Resistance |
RθJC |
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1.25 |
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oC/W |
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Junction-to-Case |
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(Note 1) |
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NOTE:
1. JEDEC registered value.
3-2
2N6975, 2N6976, 2N6977, 2N6978
Typical Performance Curves
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VGE = VCE |
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1.3 |
IC = 1mA |
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NORMALIZED GATE THRESHOLD |
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1.2 |
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1.1 |
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VOLTAGE |
1.0 |
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0.9 |
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0.8 |
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0.7 |
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-50 |
0 |
+50 |
+100 |
+150 |
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T , JUNCTION TEMPERATURE (oC) |
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C |
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FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE FOR ALL TYPES
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ZθJC(t) = r(t)RθJC |
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THERMALTRANSIENTEFFECTIVE |
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D CURVES APPLY FOR POWER PULSE |
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(NORMALIZED)IMPEDANCE |
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TRAIN SHOWN READ TIME AT t1 |
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10 |
TJ(PEAK) - TC = P(PEAK)ZθJC(t) |
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1.0 |
D = 0.5 |
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D = 0.2 |
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0.1 |
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D = 0.05 |
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0.01 |
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SINGLE PULSE |
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0.01 |
0.1 |
1.0 |
10 |
100 |
1000 |
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t, TIME (ms) |
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FIGURE 2. NORMALIZED THERMAL RESPONSE CHARACTERISTICS FOR ALL TYPES
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10 |
PULSE TEST, VCE = 10V |
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(A) |
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PULSE DURATION = 80μs |
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7.5 |
DUTY CYCLE = 0.5% MAX |
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CURRENT |
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5.0 |
+125oC |
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COLLECTOR |
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2.5 |
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-40 C |
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CE |
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+25oC |
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0 |
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0 |
2.5 |
5.0 |
7.5 |
10 |
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VGE, GATE-TO-EMITTER VOLTAGE (V) |
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FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL
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TYPES |
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10 |
PULSE TEST |
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PULSE DURATION = 80μs |
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(A) |
8 |
DUTY CYCLE = 0.5% MAX |
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VGE = 10V |
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CURRENT |
6 |
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COLLECTOR |
4 |
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2 |
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CE |
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0 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT FOR ALL TYPES
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= +25oC |
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V |
GE |
= +10V |
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T |
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C |
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(A) |
7.5 |
VGE = +8V |
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VGE = +6V |
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CURRENT |
VGE = +7V |
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VGE = +5V |
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5.0 |
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, COLLECTOR |
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2.5 |
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VGE = +4V |
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CE |
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I |
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0 |
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0 |
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1 |
2 |
3 |
4 |
5 |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) |
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FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR ALL TYPES
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1200 |
f = 0.1MHz |
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1000 |
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(pF) |
800 |
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CAPACITANCEC, |
600 |
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CISS |
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400 |
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200 |
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COSS |
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0 |
CRSS |
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0 |
10 |
20 |
30 |
40 |
50 |
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTOR- TO-EMITTER VOLTAGE FOR ALL TYPES
3-3
2N6975, 2N6976, 2N6977, 2N6978
Typical Performance Curves (Continued)
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WOFF = ò IC * VCEdt |
VGE |
IC |
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VCE |
FIGURE 7. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
(kHz) |
140 |
TC = oC |
100 |
90 |
100 |
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FREQUENCY |
120 |
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fMAX1 = 0.05/tD(OFF) |
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fMAX2 = (PD - PC)/WOFF |
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100 |
2N6975 |
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2N6976 |
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2N6977 |
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OPERATING |
80 |
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2N6978 |
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VGE = 10V |
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60 |
RG = 50Ω |
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RL = 300/ceΩ |
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MAXIMUM |
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40 |
L = 50μH |
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VCC = 300V |
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TJ = +150oC |
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, |
20 |
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OP |
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1 |
2 |
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10 |
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f |
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ICE, COLLECTOR CURRENT (A)
PD: ALLOWABLE DISSIPATION
PC: CONDUCTION DISSIPATION
FIGURE 8. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT (TYPICAL)
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500 |
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RL = 100Ω |
10 |
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(V) |
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GATE |
IG (REF) = 0.43mA |
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EMITTER |
VGE = 10V |
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-EMITTER VOLTAGE |
375 |
VCC = BVCES |
8 |
EMITTER VOLTAGE (V) |
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VOLTAGE |
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VCC = BVCES |
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6 |
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250 |
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0.75 BVCES |
0.75 BVCES |
4 |
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COLLECTOR |
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0.50 BVCES |
0.50 BVCES |
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- |
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125 |
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GATE |
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0.25 BVCES |
0.25 BVCES |
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2 |
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, |
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GE |
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, |
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COLLECTOR-EMITTER VOLTAGE |
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V |
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CE |
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0 |
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0 |
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V |
IG (REF) |
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IG (REF) |
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TIME (μs) |
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20 IG (ACT) |
80 IG (ACT) |
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FIGURE 9. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260)
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RL |
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L = 50μH |
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1/RG = 1/RGEN + 1/RGE |
VCC |
+ |
RGEN = 100Ω |
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300V |
- |
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20V |
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0V |
RGE = 100Ω |
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FIGURE 10. INDUCTIVE SWITCHING TEST CIRCUIT
3-4