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HGTB12N6

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S E M I C O N D U C T O R

April 1995

HGTB12N60D1C

12A, 600V Current Sensing N-Channel IGBT

Features

• 12A, 600V

• r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω

DS(ON)

• Low V at 25A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5V (Typ)

CE(SAT)

• Ultra-Fast Turn-On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100ns (Typ)

• Polysilicon MOS Gate - Voltage Controlled Turn On/Off

• High Current Handling at +100 C. . . . . . . . . . . . . . . . . . . . . . . . . . .10A

• Current Sensing Pilot

Description

The HGTB12N60D1C Insulated-Gate Bipolar Transistor is a MOS-gate turn on/off power switching device combining the best advantages of power MOSFETs and bipolar transistors, and current sensing pilots. The result is a device that has the high input impedance of MOSFETs and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics of the IGBT are also similar to power MOS-

FETs. An important difference is the equivalent rDS(ON) drain resistance which is modulated to a low value (ten times lower) when the gate is turned

on. The much lower on-state voltage drop also varies only moderately between +25oC and +150oC, offering extended power handling capability.

The IGBT is ideal for many high-voltage switching applications operating at low frequencies and where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

HGTB12N60D1C	TS-001AA	12N60D1C

NOTE: When ordering, use the entire part number.

Package

JEDEC TS-001AA (5 LEAD TO-220)

54 3 2 1

COLLECTOR (FLANGE)

1 - GATE

2 - SENSE

3 - COLLECTOR

4 - (KELVIN) EMITTER

5 - EMITTER

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

S EK

	Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed						HGTB12N60D1C		UNITS
							HGTB12N60D1C		UNITS
	Collector-Emitter Voltage (VGE = 0V) . .		. . . . . . . . . . . . .	. . . . . . . . . . . . . .	. . . . . . . . . . .	.VCES		600	V
	Collector-Gate Voltage (RGE = 1MΩ) . .		. . . . . . . . . . . . .	. . . . . . . . . . . . . .	. . . . . . . . . . .	VCGR		600	V
	Collector Current Continuous at TC = +100oC . . . . . . . . .			. . . . . . . . . . . . .	. . . . . . . . . . .	. . . IC		12	A
		at TC = +25oC . . . . . . . . . .		. . . . . . . . . . . . .	. . . . . . . . . . .	. . . IC		18	A
	Collector Current Pulsed (Note 1) . . . .		. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. . . . . . . . . . .	. . ICM		40	A
	Gate-Emitter Voltage	. . . . . . . . . . . . . .	. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. . . . . . . . . . .	. VGE		±25	V
	Power Dissipation Total at TC = +25oC		. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. . . . . . . . . . .	. . PD		75	W
	Power Dissipation Derating TC > +25oC . . . . . . . . . . . . .			. . . . . . . . . . . . .	. . . . . . . . . . .	. . . . .		0.6	W/oC
	Operating and Storage Junction Temperature Range . . .			. . . . . . . . . . . . .	. . . . . . . . . T	, T		-55 to +150	oC
					J	STG			oC/W
	Thermal Resistance, Junction to Case.		. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. . . . . . . . . . .	. RθJC		1.67	oC/W
	Maximum Lead Temperature for Soldering . . . . . . . . . . .			. . . . . . . . . . . . .	. . . . . . . . . . .	. . . TL		260	oC
	(1/8 inch from case for 5s)
	NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Gate control turn-off not allowed above 50A.

	HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073		4,417,385	4,430,792	4,443,931	4,466,176	4,516,143		4,532,534	4,567,641
4,587,713		4,598,461	4,605,948	4,618,872	4,620,211	4,631,564		4,639,754	4,639,762
4,641,162		4,644,637	4,682,195	4,684,413	4,694,313	4,717,679		4,743,952	4,783,690
4,794,432		4,801,986	4,803,533	4,809,045	4,809,047	4,810,665		4,823,176	4,837,606
4,860,080		4,883,767	4,888,627	4,890,143	4,901,127	4,904,609		4,933,740	4,963,951
4,969,027

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.								File Number 2326.3

3-42

Speciﬁcations HGTB12N60D1C

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

LIMITS

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

BVCES

IC = 25μA, VGE = 0V

600

Collector Cut-Off Current

= +25oC, V

= 0V,

250

μA

CES

VCE = Maximum Rating

TC = +150oC, VGE = 0V,

VCE = Maximum Rating x 0.8 (Note 1)

Gate-Emitter Leakage Current

IGES

VGE = ±20V

±500

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

GE(TH)

= V

= +25oC

IC = 250μA

TC = +150oC

2.5

Collector-Emitter Saturation Voltage

VCE(SAT)

VGE = 15V, IC = 10A, TC = +25oC

2.5

2.7

VGE = 15V, IC = 10A, TC = +150oC

2.8

VGE = 10V, IC = 10A, TC = +25oC

2.9

DYNAMIC CHARACTERISTICS

Input Capacitance

CIES

VGE = 0V, VCE = 25V, f = 1MHz

1050

Output Capacitance

COES

340

Reverse Transfer Capacitance

CRES

SWITCHING CHARACTERISTICS (See Figures 8 and 9) (Note 2)

Turn-On Delay Time

tD(ON)

Resistive Load, TJ = +125oC,

100

IC = 10A, VCE = 500V, VGE = 15V,

Rise Time

100

RG(ON) = 50Ω, RG(OFF) = 100Ω

Turn-Off Delay Time

tD(OFF)

0.4

μs

Fall Time

2.5

μs

Turn-Off Delay Time

Inductive Load, T

= +125oC,

0.8

1.2

μs

D(OFF)I

L = 45μH, IC = 10A, VCE(CLAMP) = 500V,

Fall Time

tFI

0.8

1.0

μs

VGE = 15V, RG(ON) = 50Ω,

RG(OFF) = 100Ω

Equivalent Fall Time

tF(EQ)

0.6

0.8

μs

Turn-Off Switching Losses

WOFF

1.6

2.0

PILOT CHARACTERISTICS (Notes 2, 3 and 4)

Pilot-Emitter Kelvin Voltage

VPEK

VGE = 15VDC, RP = 2kΩ

IC = 5A

1.25

IC = 10A

1.4

1.67

1.8

IC = 20A

2.06

NOTES:

1. Applies for 3.3° C per watt maximum thermal resistance, case-to-ambient. 2. Pulse test: Pulse widths ≤ 300μs, duty cycle ≤ 2%.

3. Refer to Figure 10.

4. When not in use connect S to emitter.

3-43

HGTB12N60D1C

Typical Performance Curves

	40		VGE = 20V			VGE = 14V
			VGE = 20V			VGE = 14V	VGE = 12V
	35						VGE = 12V
(A)	35						TC = +25oC
							TC = +25oC
						MAX. DUTY CYCLE = 2%
CURRENT	30					MAX. DUTY CYCLE = 2%
	30					MAX. PULSE WIDTH = 200μs
						MAX. PULSE WIDTH = 200μs
	25						VGE = 10V
	25

, COLLECTOR	20						VGE = 9V
	15						VGE = 8V
							VGE = 8V
	10						VGE = 7V
CE	V	GE	= 4V				VGE = 7V
I		GE
	5						VGE = 6V
	0						VGE = 5V
	0
	0		2	4	6	8	10	12
			VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1. TYPICAL OUTPUT CHARACTERISTICS

	25	VGE = 15V
		VGE = 15V
(A)		MAX. PULSE WIDTH = 300μs		T		= +25oC
(A)		MAX. DUTY CYCLE = 2%		T	C	= +25oC
CURRENT	20	MAX. DUTY CYCLE = 2%			C
	20
			TC = -55oC
	15
, COLLECTOR	15
					TC = +150oC
	10

CE	5
I

	0
	0	1	2	3		4	5
	VCE(ON), COLLECTOR-EMITTER SATURATION VOLTAGE (V)

FIGURE 2. TYPICAL COLLECTOR-EMITTER SATURATION VOLTAGE

TC, MAXIMUM ALLOWABLE (oC)

160

140

120

100

VGE = 10V

VGE = 15V

5 10 15 20

ICE, DC COLLECTOR CURRENT (A)

FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE vs DC COLLECTOR CURRENT

	1.4
	1.2	VGE(TH)					BVCES
	VCE(SAT)						VCE(SAT)
C	1.0	AT1A					AT 10A
o	1.0
+25	VCE(SAT)		BVCES
TO	AT 10A		BVCES				VCE(SAT)
TO	0.8						VCE(SAT)
NORMALIZED					VGE(TH)		AT 1A
NORMALIZED

	0.6	PARAMETER			CONDITIONS	+25oC TYP. VALUE
		PARAMETER			CONDITIONS	+25oC TYP. VALUE
	0.4	VGE(TH)		IC = 250μA			4.0V
	0.4	VCE(SAT)		IC = 10A, VGE = 15V			2.5V
		VCE(SAT)		IC = 10A, VGE = 15V			2.5V
	0.2			IC = 1A, VGE = 15V			1.1V
		BVCES		IC = 1mA		VCES Rating
	0.0
	-100	-50		0	+50	+100	+150

TC , CASE TEMPERATURE (oC)

FIGURE 4. TYPICAL TEMPERATURE DEPENDENCE OF PARAMETERS

	2.9					40
(V)	2.8
(V)	2.7		TJ = +125oC
VOLTAGEREF.	2.6		TJ = +125oC		CURRENT(A)
VOLTAGEREF.	2.5				CURRENT(A)	30
	2.5
	2.4
	2.4
	2.3
	2.2
EMITTER-	2.1		TJ = +25oC		COLLECTOR,	10
EMITTER-	1.6		TJ = +25oC		COLLECTOR,	10
	2.0					20
	1.9		T	J	= +90oC
	1.8
PILOT	1.7
PILOT	1.5				I
					CE
,	1.4
PE	1.4
PE	1.3
V	1.3
	1.2					0
	5	10	20		30	0

INDUCTIVE OR RESISTIVE LOAD

TJ = +150oC, RGE = 100Ω

100

200

300

400

500

ICE, EMITTER CURRENT (A)	VCE, COLLECTOR-EMITTER VOLTAGE (V)
ICE, EMITTER CURRENT (A)
FIGURE 5. TYPICAL EMITTER PILOT CHARACTERISTICS	FIGURE 6. TURN-OFF SAFE OPERATING AREA
2kΩ PILOT RESISTOR

3-44

HGTB12N60D1C

Typical Performance Curves (Continued)

100

C/W)

D = 0.5

(

THERMAL IMPEDANCE

D = 0.2

COLLECTOR, CURRENT (A)

2.00

D = 0.1

10μs

1.00

5.0

0.40

100μs

2.0

0.20

1.0

1ms

0.10

D = 0.05

0.5

SINGLE PULSE

10ms

D = 0.02

TC = +25

0.04

TRANSIENT,

D = 0.01

100ms

0.2

0.02

SINGLE RECTANGULAR PULSE

0.1

Zθ

0.01

10-4

10-3

10-2

10-1

100 200

500

10-5

VCE, COLLECTOR-EMITTER VOLTAGE (V)

tP , PULSE WIDTH (s)

FIGURE 7. TURN-ON SAFE OPERATING AREA

FIGURE 8. MAXIMUM TRANSIENT THERMAL IMPEDANCE

Test Circuits and Waveforms

L = 45μH

VGE

90%

VGE

90%

10%

90%

10%

tD(ON)

tD(OFF)

PULSE

VCC

VCL

GENERATOR

RGE

VCE (CLAMP)

RGEN = 50Ω

VCE

S1 SWITCH POSITION

1 CLAMPED INDUCTIVE LOAD

tD(OFF)

2 RESISTIVE LOAD

RG(ON) =

(RGEN + RS)(RGE) PULSE WIDTH 60μs VCC

RESISTIVE LOAD

INDUCTIVE LOAD

RGEN + RS + RGE

(WAVEFORMS NOT TO SCALE)

L-IC MAXIMUM, PULSE WIDTH

FIGURE 9. BASIC SWITCHING TEST CIRCUIT

FIGURE 10. SWITCHING WAVEFORMS

LOAD

+15

VCC

INPUT

100

1/2

ICL7667

2kΩ

COMP

RP (PILOT

RESISTOR)

FIGURE 11. TYPICAL CIRCUIT UTILIZING THE EMITTER PILOT

FOR OVERCURRENT PROTECTION

3-45

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