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HGTP6N40

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S E M I C O N D U C T O R

April 1995

HGTP6N40E1D,

HGTP6N50E1D

6A, 400V and 500V N-Channel IGBTs

with Anti-Parallel Ultrafast Diodes

Features

•6A, 400V and 500V

•Latch Free Operation

•TFALL: < 1.0μs

•High Input Impedance

•Low Conduction Loss

•With Anti-Parallel Diode

•tRR < 60ns

Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.

The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

HGTP6N40E1D	TO-220AB	G6N40E1D

HGTP6N50E1D	TO-220AB	G6N50E1D

NOTE: When ordering, use the entire part number

Package

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

COLLECTOR (FLANGE)

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed
								HGTP6N40E1D	HGTP6N50E1D	UNITS
Collector-Emitter Voltage . .			.	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. BVCES			400	500	V
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .					. BVCGR			400	500	V
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .					. .	. IC25		7.5	7.5	A
				at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. .	. IC90		6	6	A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .					. .	. . ICM		7.5	7.5	A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .					. .	VGES		±20	±20	V
Diode Forward Current at T			C	= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. .	. .I		10	10	A
			C	= +90oC		F25
		at T	C	= +90oC	. .	. .I		6	6	A
			C	= +25oC		F90
Power Dissipation Total at T				= +25oC	. .	. . P	D	75	75	W
			C				D
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .					. .	. . . .	.	0.6	0.6	W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .					T	, T		-55 to +150	-55 to +150	oC
					J	STG		260	260	oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .					. .	. . . TL		260	260	oC
NOTE:		= +150oC, Min. R
1. T	J	= +150oC, Min. R	= 25Ω without latch.
	J	GE

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073	4,417,385	4,430,792	4,443,931	4,466,176	4,516,143	4,532,534	4,567,641
4,587,713	4,598,461	4,605,948	4,618,872	4,620,211	4,631,564	4,639,754	4,639,762
4,641,162	4,644,637	4,682,195	4,684,413	4,694,313	4,717,679	4,743,952	4,783,690
4,794,432	4,801,986	4,803,533	4,809,045	4,809,047	4,810,665	4,823,176	4,837,606
4,860,080	4,883,767	4,888,627	4,890,143	4,901,127	4,904,609	4,933,740	4,963,951
4,969,027

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.		File Number 2795.2

Copyright © Harris Corporation 1995	3-11
	3-11

Speciﬁcations HGTP6N40E1D, HGTP6N50E1D

Electrical Speciﬁcations

TC = +25oC, Unless Otherwise Speciﬁed

LIMITS

HGTP6N40E1D

HGTP6N50E1D

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

Collector-Emitter Breakdown

BVCES

IC = 1.25mA, VGE = 0V

400

500

Voltage

Gate Threshold Voltage

VGE(TH)

VGE = VCE, IC = 1mA

2.0

4.5

2.0

4.5

Zero Gate Voltage Collector

ICES

TJ = +150oC, VCE = 400V

1.25

Current

TJ = +150oC, VCE = 500V

1.25

Gate-Emitter Leakage Current

IGES

VGE = ±20V, VCE = 0V

100

Collector-Emitter On-Voltage

= +150oC, I

= 3A, V

= 10V

2.9

CE(ON)

TJ = +150oC, IC = 3A, VGE = 15V

2.5

TJ = +25oC, IC = 3A, VGE = 10V

2.5

TJ = +25oC, IC = 3A, VGE = 15V

2.4

Gate-Emitter Plateau Voltage

VGEP

IC = 3A, VCE = 10V

6.5 (Typ)

On-State Gate Charge

QG(ON)

IC = 3A, VCE = 10V

6.9 (Typ)

Turn-On Delay Time

tD(ON)

Resistive Load, IC = 3A,

90 (Typ)

= 400V, R

= 133Ω,

Rise Time

32 (Typ)

TJ = +150 C, VGE = 10V,

Turn-Off Delay Time

tD(OFF)

RG = 25Ω

24 (Typ)

Fall Time

1100 (Typ)

Turn-Off Energy Loss Per Cycle

WOFF

0.29 (Typ)

(Off Switching Dissipation = WOFF x

Frequency)

Turn-Off Delay Time

tD(OFF)I

Inductive Load (See Figure 13),

190

IC = 3A, VCE(CLP) = 400V, RL =

Fall Time

tFI

μs

133Ω, L = 50μH, T = +150 C, V

Turn-Off Energy Loss Per Cycle

WOFF

= 10V, R

= 25Ω

0.43

(Off Switching Dissipation = WOFF x

Frequency)

Thermal Resistance Junction-to-

RθJC

2.08

oC/W

Case (IGBT)

Thermal Resistance of Diode

RθJC

2.00

oC/W

Diode Forward Voltage

VEC

IEC = 6A

1.6

Diode Reverse Recovery Time

tRR

IEC = 6A, dIEC/dt = 100A/μs

Typical Performance Curves

ICE, COLLECTOR-EMITTER CURRENT (A)

7.5
	PULSE TEST, VCE = 10V
6.0	PULSE DURATION = 250μs
6.0	DUTY CYCLE < 2%
	DUTY CYCLE < 2%
4.5
3.0	TC = -55oC
1.5	T = +25oC
1.5	C
	TC = +150oC
0
0	2	4	6	8	10
	VGE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS

(A)	PULSE DURATION = 250μs DUTY CYCLE < 0.5% TC = +25oC
	7.5
	7.5	VGE = 15V
CURRENT
	6.0		VGE = 10V




					VGE = 7.5V
					VGE = 7.5V
EMITTER-
EMITTER-	4.5				VGE = 7.0V
	4.5				VGE = 7.0V

COLLECTOR	1.5				VGE = 6.5V
COLLECTOR	1.5				VGE = 5.5V
	3.0
					VGE = 6.0V
,
					VGE = 5.0V

CE
I	0


	0	2	4	6	8	10
		VGE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 2. TYPICAL SATURATION CHARACTERISTICS

3-12

HGTP6N40E1D, HGTP6N50E1D

Typical Performance Curves (Continued)

	5
(V)	5	T	J	= +150oC
		T		= +150oC

	4
VOLTAGE

					VGE = 10V
					VGE = 10V
SATURATION,	3



	2					VGE = 15V
CE(ON)	2					VGE = 15V
CE(ON)	1
V	1
V
	0
	0
	1			10
				ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT (TYPICAL)

	500
	500	f = 1MHz
		f = 1MHz
(pF)	400
	400

CAPACITANCEC,	300
	300	CISS
		CISS
	200
	200		COSS
	100		COSS
	100	CRSS
	0	CRSS


	0	5	10	15	20	25

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE (TYPICAL)

1.5

TJ = +150oC, VGE = 10V

RG = 25Ω, L = 50μH

s)	1.0
s)
FALL TIME (μ
FALL TIME (μ			VCE = 400V
,	0.5
FI	0.5
t
	0
	0
	1	10
		ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL)

(A)	12
	12
	10
CURRENT	8
	8

COLLECTORDC,	6	VGE = 10V				VGE = 15V


	4
	4
CE	2
	2

I
	0
	0
	+25	+50		+75	+100		+125	+150
			TC , CASE TEMPERATURE (oC)

FIGURE 4. DC COLLECTOR CURRENT vs CASE TEMPERATURE

0.3

+150oC, V = 15V, R

= 50Ω,

VCE = 400V, L = 50μH

(μ

OFF-TURN, DELAY

0.1

D(OFF)I

0.2

0.0

ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL)

(mJ)

= +150oC, V

= 10V

LOSS

RG = 25Ω, L = 50μH

SWITCHING

1.0

OFF-TURN,

VCE = 400V

OFF

VCE = 200V

0.1

ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT (TYPICAL)

3-13

HGTP6N40E1D, HGTP6N50E1D

Typical Performance Curves (Continued)

(KHz)

1000

= +150oC, T

= +100oC, V

= 10V

FREQUENCY

100

RG = 25W, PT = 60W, L = 50mH

OPERATING

VCE = 200V

VCE = 400V

MAXIMUM

fMAX = (PD - PC)/WOFF

PD = ALLOWABLE DISSIPATION

PC = CONDUCTION DISSIPATION

ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT AND VOLTAGE (TYPICAL)

	500			RL = 166.7W	10
(V)				RL = 166.7W
(V)		VCC = BVCES		IG(REF) = 0.18mA
-EMITTER VOLTAGE		VCC = BVCES		VGE = 10V
				VGE = 10V
	375	GATE-		VCC = BVCES
		GATE-		VCC = BVCES
		EMITTER
		VOLTAGE
	250	0.75 BVCES	0.75 BVCES		5
		0.75 BVCES	0.75 BVCES		VOLTAGEEMITTER- (V)
		0.50 BVCES	0.50 BVCES		VOLTAGEEMITTER- (V)
COLLECTOR	125	0.25 BVCES	0.25 BVCES		GATE
	125				GATE
					,
					GE
,		COLLECTOR-EMITTER			V
CE		COLLECTOR-EMITTER
CE
V	0	VOLTAGE			0
		VOLTAGE

20	IG(REF)	TIME (ms)	80	IG(REF)
	IG(ACT)			IG(ACT)

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT

CURRENTCOLLECTOR- (A)	100								RECOVERYREVERSETIME (ns)
CURRENTCOLLECTOR- (A)	10								RECOVERYREVERSETIME (ns)
	10
							T	= +150oC
							J
							T	= +100oC
EMITTER,	1.0						J		RR
EMITTER,							TJ = -50oC		RR

							TJ = +25oC
									,
EC									t
I
	0.1
	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0
		VEC , EMITTER-COLLECTOR VOLTAGE (V)

FIGURE 11. TYPICAL FORWARD VOLTAGE

di/dt ³ 100A/ms

VR = 30V, TJ = +25oC

0 2 4 6 8 10 12 14 16

IEC, EMITTER-COLLECTOR CURRENT (A)

FIGURE 12. TYPICAL REVERSE RECOVERY TIME

Test Circuit

	RL
	L = 50mH
1/RG = 1/RGEN + 1/RGE	VCC	+
RGEN = 50W	VCC
RGEN = 50W	400V	-
		-
20V
0V	RGE = 50W
0V

FIGURE 13. INDUCTIVE SWITCHING TEST CIRCUIT

3-14

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