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HGTH20N4

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S E M I C O N D U C T O R

April 1995

HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D

20A, 400V and 500V N-Channel IGBTs

with Anti-Parallel Ultrafast Diodes

Features

•20A, 400V and 500V

•VCE(ON) 2.5V Max.

•TFALL 1μs, 0.5μs

•Low On-State Voltage

•Fast Switching Speeds

•High Input Impedance

•Anti-Parallel Diode

Applications

•Power Supplies

•Motor Drives

•Protective Circuits

Description

The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.

Package

	JEDEC TO-218AC
COLLECTOR	EMITTER	COLLECTOR
COLLECTOR		COLLECTOR
(FLANGE)		GATE

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

HGTH20N40C1D	TO-218AC	G20N40C1D

HGTH20N40E1D	TO-218AC	G20N40E1D

HGTH20N50C1D	TO-218AC	G20N50C1D

HGTH20N50E1D	TO-218AC	G20N50E1D

NOTE: When ordering, use the entire part number.

	Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed
									HGTH20N40C1D	HGTH20N50C1D
									HGTH20N40E1D	HGTH20N50E1D		UNITS
	Collector-Emitter Voltage . . . . . . . .		. . .	.	. . . . . . . . . . . .	. . . . . . . . . . . . .	. . .	VCES	400	500		V
	Collector-Gate Voltage RGE = 1MΩ		. . .	. .	. . . . . . . . . . . .	. . . . . . . . . . . . .	. .	VCGR	400	500		V
	Gate-Emitter Voltage	. . . . . . . . . . .	. . .	. .	. . . . . . . . . . . .	. . . . . . . . . . . . .	. .	. VGE	±20	±20		V
	Collector Current Continuous . . . . .		. . .	. .	. . . . . . . . . . . .	. . . . . . . . . . . . .	. .	. . . IC	20	20		A
	Collector Current Pulsed . . . . . . . .		. . .	. .	=. .+25. . .oC. . . . . . .	. . . . . . . . . . . . .	. .	. .ICM	35	35		A
	Diode Forward Current Continuous at T			C	=. .+25. . .oC. . . . . . .	. . . . . . . . . . . . .	. .	. I	35	35		A
				C				F25
			at TJ = +90oC. . . . . .			. . . . . . . . . . . . .	. .	. IF90	20	20		A
	Power Dissipation Total at TC = +25oC			. .	. . . . . . . . . . . .	. . . . . . . . . . . . .	. .	. . PD	100	100		W
	Power Dissipation Derating T > +25oC .				. . . . . . . . . . . .	. . . . . . . . . . . . .	. .	. . . .	0.8	0.8		W/oC
		C										oC
	Operating and Storage Junction Temperature Range . . .					. . . . . . . . . . . .	T	, T	-55 to +150	-55 to +150		oC
							J	STG

	HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073		4,417,385	4,430,792			4,443,931	4,466,176		4,516,143	4,532,534	4,567,641
4,587,713		4,598,461	4,605,948			4,618,872	4,620,211		4,631,564	4,639,754	4,639,762
4,641,162		4,644,637	4,682,195			4,684,413	4,694,313		4,717,679	4,743,952	4,783,690
4,794,432		4,801,986	4,803,533			4,809,045	4,809,047		4,810,665	4,823,176	4,837,606
4,860,080		4,883,767	4,888,627			4,890,143	4,901,127		4,904,609	4,933,740	4,963,951
4,969,027

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.										File Number		2271.4

3-76

Speciﬁcations HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D

Electrical Speciﬁcations

TC = +25oC, Unless Otherwise Speciﬁed

LIMITS

HGTH20N40C1D,

HGTH20N50C1D,

HGTH20N40E1D

HGTH20N50E1D

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

Collector-Emitter Breakdown Voltage

BVCES

IC = 1mA, VGE = 0

400

500

Gate Threshold Voltage

VGE(TH)

VGE = VCE, IC = 1mA

2.0

4.5

2.0

4.5

Zero Gate Voltage Collector Current

CES

= 400V, T

= +25oC

250

μA

= 500V, T

= +25oC

250

μA

= 400V, T

= +125oC

1000

μA

= 500V, T

= +125oC

1000

μA

Gate-Emitter Leakage Current

IGES

VGE = ±20V, VCE = 0

100

Collector-Emitter On Voltage

VCE(ON)

IC = 20A, VGE = 10V

2.5

IC = 35A, VGE = 20V

3.2

Gate-Emitter Plateau Voltage

VGEP

IC = 10A, VCE = 10V

6 (Typ)

On-State Gate Charge

QG(ON)

IC = 10A, VCE = 10V

33 (Typ)

Turn-On Delay Time

tD(ON)I

IC = 20A, VCE(CLP) = 300V,

L = 25μH, TJ = +100oC,

Rise Time

tRI

VGE = 10V, RG = 25Ω

Turn-Off Delay Time

tD(OFF)I

400

Fall Time

tFI

40E1D, 50E1D

680

1000

680

1000

(Typ)

40C1D, 50C1D

400

500

400

500

(Typ)

Turn-Off Energy Loss per Cycle

WOFF

IC = 20A, VCE(CLP) = 300V,

(Off Switching Dissipation = W

L = 25μH, T

= +100oC,

OFF

Frequency)

VGE = 10V, RG = 25Ω

40E1D, 50E1D

1810 (Typ)

μJ

40C1D, 50C1D

1070 (Typ)

μJ

Thermal Resistance Junction-to-Case

RθJC

1.25

oC/W

Diode Forward Voltage

VEC

IEC = 20A

Diode Reverse Recovery Time

tRR

IEC = 20A, dIEC/dt = 100A/μs

100

3-77

		HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves
	40	VGE = 10V, RGEN = RGS = 50Ω
		VGE = 10V, RGEN = RGS = 50Ω
COLLECTOR CURRENT (A)	35								POWER DISSIPATION (%)	100
										100
	30
										80
	25
	20									60
	15									40
										40
	10
,	10								RATED
,
CE										20
I	5									20
	5
	0
	-75	-50	-25	0	+25 +50	+75 +100	+125 +150	+175			0	+25	+50	+75	+100	+125	+150
			T , JUNCTION TEMPERATURE (oC)										T , CASE TEMPERATURE (oC)
			J										C
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω,									FIGURE 2. POWER DISSIPATION vs TEMPERATURE
		VGE = 0V ARE THE MIN. ALLOWABLE VALUES										DERATING CURVE
(V)		VGE = VCE, IC = 1mA								35	VCE = 10V, PULSE TEST
(V)
GATE THRESHOLD VOLTAGE
	1.3									30	PULSE DURATION = 80μs
	1.3								, COLLECTOR CURRENT (A)	30	DUTY CYCLE = 0.5% MAX
											DUTY CYCLE = 0.5% MAX
	1.2									25
										25
	1.1									20
										20
	1.0
										15			+25oC
	0.9												+25oC
	0.8									10			+125oC
	0.8												+125oC
NORMALIZED									CE	5
	0.7								I	5
	0.7														-40oC
															-40oC
	-50		0		+50	+100	+150				0		2.5		5.0	7.5	10
			TJ, JUNCTION TEMPERATURE (oC)										VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-										FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
		AGE vs JUNCTION TEMPERATURE
	35											VGE = 10V, PULSE TEST
	VGE = 20V						TC = +25oC			35		VGE = 10V, PULSE TEST
	VGE = 20V						TC = +25oC			35				μ
, COLLECTOR CURRENT (A)	30								COLLECTOR CURRENT (A)			PULSE DURATION = 80 s
	30											DUTY CYCLE = 0.5% MAX
	VGE = 10V									30		DUTY CYCLE = 0.5% MAX
	25	VGE = 8V								30
	25	VGE = 8V
	20	VGE = 7V								25					+25oC
	20														+25oC
		VGE = 6V								20
	15									20
	15	VGE = 5V
		VGE = 5V
	10	VGE = 4V								15
	10	VGE = 4V
CE									,
I									CE	10
	5								I


										5
	0		1		2	3	4	5			0		1		2	3	4
		VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)										VCE(ON), COLLECTOR-TO-EMITTER ON VOLTAGE (V)
	FIGURE 5. TYPICAL SATURATION CHARACTERISTICS								FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
												vs COLLECTOR CURRENT
								3-78

HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D

Typical Performance Curves (Continued)

	2700
	2700	f = 0.1MHz
		f = 0.1MHz
(pF)	2250


	1800
CAPACITANCE	1800
	900
	900
C,	1350				CISS
	1350				CISS


				COSS
				COSS
	450



		CRSS

	0		10			20	30	40	50
				VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
			VOLTAGE
	400
	400	IC = 20A, VGE = 10V, VCE(CLP) = 300V
		IC = 20A, VGE = 10V, VCE(CLP) = 300V
		L = 25μH, RG = 25Ω
(ns)	300
(ns)	300
TIME
OFF DELAY	200
TURN,	100
D(OFF)I	100
D(OFF)I
t	0


	+25		+50			+75	+100	+125	+150
				TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. TYPICAL TURN-OFF DELAY TIME

	800
	700	IC = 10A, VGE = 10V, VCE(CLP) = 300V
		L = 25μH, RG = 25Ω
	600
(ns)	500	40E1D/50E1D
	500

TIME	400				40C1D/50C1D
TIME
, FALL
	300

FI
t	200
	200
	100
	0
	+25	+50	+75	+100	+125	+150
		TJ , JUNCTION TEMPERATURE (oC)

FIGURE 11. TYPICAL FALL TIME (IC = 10A)

(V)

3.00

VOLTAGE

2.75

IC = 20A, VGE = 10V

EMITTER-

2.25

2.50

IC = 20A, VGE = 15V

COLLECTOR,

1.75

2.00

IC = 10A, VGE = 10V

CE(ON)

IC = 10A, VGE = 15V

1.50

+25

+50

+75

+100

+125

+150

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE

	WOFF = ò IC * VCEdt
VGE	IC
	VCE

FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS

	800	IC = 20A, VGE = 10V, VCE(CLP) = 300V
		IC = 20A, VGE = 10V, VCE(CLP) = 300V
	700	L = 25μH, RG = 25Ω
	600
(ns)	500			40E1D/50E1D
TIME	400
FALL	300			40C1D/50C1D
FALL	300
,
FI
t	200
	200
	100
	0
	+25	+50	+75	+100	+125	+150
		TJ , JUNCTION TEMPERATURE (oC)

FIGURE 12. TYPICAL FALL TIME (IC = 20A)

3-79

HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D

Typical Performance Curves (Continued)

	1000							(V)	500					10
	1000	VGE = 10V, VCE(CLP) = 300V

, TURN-OFF ENERGY LOSS (μJ)	900							COLLECTOR-EMITTER VOLTAGE							(V)
	900	L = 25mH, RG = 25W									VCC = BVCES
		L = 25mH, RG = 25W									VCC = BVCES			8
	800													8	VOLTAGE
	800								375		GATE
									375		GATE
	700										EMITTER
	700		20A, 40E1D/50E1D								VOLTAGE
	600		20A, 40E1D/50E1D								VOLTAGE			6
														6	-EMITTER

	500				20A, 40C1D/50C1D				250
	500				20A, 40C1D/50C1D						VCC = 0.25 BVCES
											VCC = 0.25 BVCES			4
	400										RL = 25W			4
	400										RL = 25W
	300					10A, 40E1D/50E1D					IG(REF) = 0.76mA				GATE
	300								125		VGE = 10V			2	GATE
															,
	200														GE
	200										COLLECTOR-EMITTER VOLTAGE				GE
OFF						10A, 40C1D/50C1D		,			COLLECTOR-EMITTER VOLTAGE				V
						10A, 40C1D/50C1D		CE
	100							CE
W	100							V
W								V	0					0
	0								0		IG(REF)		IG(REF)	0
	0										IG(REF)		IG(REF)
	+25		+50	+75	+100	+125	+150			20	TIME (ms)	80	IG(ACT)
			T , JUNCTION TEMPERATURE (oC)								IG(ACT)		IG(ACT)
			J					NOTE: For Turn-Off gate currents in excess of 3mA. VCE Turn-Off
										is not accurately represented by this normalization.

FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF	FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
SWITCHING LOSS/CYCLE	STANT GATE CURRENT (REFER TO APPLICATION
	NOTES AN7254 AND AN7260)

	100														TYPICAL REVERSE RECOVERY TIME
CURRENTCOLLECTOR(A)													TIMERECOVERYREVERSE, (ns)		TYPICAL REVERSE RECOVERY TIME
CURRENTCOLLECTOR(A)						J							TIMERECOVERYREVERSE, (ns)	60
														60
	10									TJ = +150oC				50
										TJ = +150oC				50
							T	= +100oC						40
							J											dIEC/dt ³ 100A/ms
														30				dIEC/dt ³ 100A/ms
	1.0						TJ = +25		o	C				30				V	= 30V, T		J	= +25oC
EMITTER,	1.0						TJ = +25			C			RR						R		J
EMITTER,					T		= -50oC						RR	20
														20

EC													t	10
EC													t
I	0.1
	0.1
	0.4	0.6	0.8	1.0	1.2		1.4			1.6	1.8	2.0		0	2	4	6	8	10	12		14	16	18	20
														0	2	4	6	8	10	12		14	16	18	20
		VEC , EMITTER-COLLECTOR VOLTAGE (V)														IEC , EMITTER-COLLECTOR CURRENT (A)

FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR

FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME

VOLTAGE vs CURRENT

Test Circuit

RL = 4W

L = 25mH

VCC 100V

1/RG = 1/RGEN + 1/RGE

RGEN = 50W	VCE(CLP) =
	300V
20V
0V	RGE = 50W
0V

FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT

3-80

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