S E M I C O N D U C T O R
April 1995
HGTA32N60E2
32A, 600V N-Channel IGBT
Features
•32A, 600V
•Latch Free Operation
•Typical Fall Time 620ns
•High Input Impedance
•Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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HGTA32N60E2 |
TO-218 |
GA32N60E2 |
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NOTE: When ordering, use the entire part number.
Package
JEDEC MO-093AA (5 LEAD TO-218)
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5 EMITTER |
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4 EMITTER KELVIN |
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3 COLLECTOR |
COLLECTOR |
2 NO CONNECTION |
(FLANGE) |
1 GATE |
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
EMITTER
KELVIN
E
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Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified |
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HGTA32N60E2 |
UNITS |
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Collector-Emitter Voltage . . . . . . . . |
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. BVCES |
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600 |
V |
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Collector-Gate Voltage RGE = 1MΩ |
=. .+25. . .o.C. . . . . . . . . . . |
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VCGR |
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600 |
V |
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Collector Current Continuous at T |
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. .I |
C25 |
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50 |
A |
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C |
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at VGE = 15V at TC = +90oC . . . . . . . |
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. .IC90 |
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32 |
A |
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Collector Current Pulsed (Note 1) . |
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. . ICM |
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200 |
A |
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Gate-Emitter Voltage Continuous. . |
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VGES |
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±20 |
V |
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Gate-Emitter Voltage Pulsed . . . . . |
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VGEM |
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±30 |
V |
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Switching Sage Operating Area TJ = +150oC . . . . . . . . . |
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SSOA |
200A at 0.8 BVCES |
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Power Dissipation Total at TC = +25oC |
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PD |
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208 |
W |
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Power Dissipation Derating TC > +25oC . . |
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1.67 |
W/oC |
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Operating and Storage Junction Temperature Range . . . |
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T |
, T |
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-55 to +150 |
oC |
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J |
STG |
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260 |
oC |
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Maximum Lead Temperature for Soldering |
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TL |
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Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . |
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tSC |
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3 |
μs |
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NOTES: |
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at VGE = 10V . . . . |
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tSC |
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15 |
μs |
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1. Repetitive Rating: Pulse width limited by maximum junctions temperature. |
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2. V |
CE(PEAK) |
= 360V, T = +125oC, R |
GE |
= 25Ω. |
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C |
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HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: |
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4,364,073 |
4,417,385 |
4,430,792 |
4,443,931 |
4,466,176 |
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4,516,143 |
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4,532,534 |
4,567,641 |
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4,587,713 |
4,598,461 |
4,605,948 |
4,618,872 |
4,620,211 |
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4,631,564 |
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4,639,754 |
4,639,762 |
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4,641,162 |
4,644,637 |
4,682,195 |
4,684,413 |
4,694,313 |
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4,717,679 |
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4,743,952 |
4,783,690 |
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4,794,432 |
4,801,986 |
4,803,533 |
4,809,045 |
4,809,047 |
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4,810,665 |
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4,823,176 |
4,837,606 |
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4,860,080 |
4,883,767 |
4,888,627 |
4,890,143 |
4,901,127 |
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4,904,609 |
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4,933,740 |
4,963,951 |
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4,969,027 |
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CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. |
File Number 2833.3 |
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Copyright © Harris Corporation 1995 |
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3-116 |
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Specifications HGTA32N60E2
Electrical Specifications TC = +25oC, Unless Otherwise Specified
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LIMITS |
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PARAMETERS |
SYMBOL |
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TEST CONDITIONS |
MIN |
TYP |
MAX |
UNITS |
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Collector-Emitter Breakdown Voltage |
BVCES |
IC = 250μA, VGE = 0V |
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600 |
- |
- |
V |
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Collector-Emitter Leakage Current |
ICES |
VCE = BVCES |
TC = |
+25oC |
- |
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250 |
μA |
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V |
CE |
= 0.8 BV |
T |
C |
= |
+125oC |
- |
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4.0 |
mA |
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CES |
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Collector-Emitter Saturation Voltage |
VCE(SAT) |
IC = IC90, |
TC = |
+25oC |
- |
2.4 |
2.9 |
V |
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VGE = 15V |
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TC = |
+125oC |
- |
2.4 |
3.0 |
V |
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Gate-Emitter Threshold Voltage |
VGE(TH) |
IC = 1.0mA, |
TC = |
+25oC |
3.0 |
4.5 |
6.0 |
V |
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VCE = VGE |
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Gate-Emitter Leakage Current |
IGES |
VGE = ±20V |
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±500 |
nA |
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Gate-Emitter Plateau Voltage |
VGEP |
IC = IC90, VCE = 0.5 BVCES |
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6.5 |
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V |
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On-State Gate Charge |
QG(ON) |
IC = IC90, |
VGE = 15V |
- |
200 |
260 |
nC |
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VCE = 0.5 BVCES |
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VGE = 20V |
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265 |
345 |
nC |
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Current Turn-On Delay Time |
tD(ON)I |
L = 500μH, IC = IC90, RG = 25Ω, |
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100 |
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ns |
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VGE = 15V, TJ = +125oC, |
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Current Rise Time |
tRI |
VCE = 0.8 BVCES |
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150 |
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ns |
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Current Turn-Off Delay Time |
tD(OFF)I |
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630 |
820 |
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Current Fall Time |
tFI |
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620 |
800 |
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Turn-Off Energy (Note 1) |
WOFF |
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3.5 |
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mJ |
Thermal Resistance |
RθJC |
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0.5 |
0.6 |
oC/W |
NOTE:
1.Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTA32N60E2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
(A) |
100 |
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PULSE DURATION = 250μs |
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CURRENT |
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DUTY CYCLE < 0.5%, VCE = 15V |
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80 |
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EMITTER |
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60 |
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TC = +150 |
oC |
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40 |
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COLLECTOR, |
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TC = +25oC |
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20 |
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T |
C |
= -40oC |
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CE |
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0 |
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10 |
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VGE, GATE-TO-EMITTER VOLTAGE (V) |
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FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
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100 |
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(A) |
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VGE = 15V |
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VGE = 10V |
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90 |
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CURRENT |
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80 |
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VGE = 8.0V |
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PULSE DURATION = 250 s |
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EMITTER- |
70 |
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DUTY CYCLE < 0.5%, TC = +25oC |
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60 |
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VGE = 7.5V |
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50 |
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COLLECTOR, |
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40 |
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V |
GE = 6.0V |
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VGE = 7.0V |
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30 |
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20 |
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VGE = 5.5V |
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VGE = 6.5V |
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CE |
10 |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) |
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FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-117
HGTA32N60E2
Typical Performance Curves (Continued)
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60 |
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1.0 |
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(A) |
50 |
VGE = 15V |
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CURRENT |
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0.8 |
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40 |
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0.6 |
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COLLECTOR |
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VGE |
= 10V |
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TIME |
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30 |
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, FALL |
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0.4 |
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20 |
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FI |
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DC |
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t |
0.2 |
, |
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CE |
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10 |
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I |
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0 |
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0.0 |
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+25 |
+50 |
+75 |
+100 |
+125 |
+150 |
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TC, CASE TEMPERATURE (oC) |
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VGE = 10V AND 15V |
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VCE = 240V |
TJ = +150oC, RG = 25Ω |
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L = 50μH |
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VCE = 480V |
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1 |
10 |
100 |
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT vs CASE |
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT |
TEMPERATURE |
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C, CAPACITANCE (pF)
12000 |
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f = 1MHz |
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10000 |
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8000 |
CISS |
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6000 |
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4000 |
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2000 |
COSS |
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CRSS |
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0
0 |
5 |
10 |
15 |
20 |
25 |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) |
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RL = 12Ω |
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IG(REF) = 2.75mA |
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600 |
GATE- |
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VGE = 10V |
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(V) |
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10 |
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EMITTER |
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-EMITTER VOLTAGE |
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VOLTAGE |
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VCC = BVCES |
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VCC = BVCES |
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450 |
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300 |
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5 |
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0.75 BVCES |
0.75 BVCES |
EMITTERVOLTAGE(V) |
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COLLECTOR |
150 |
0.50 BVCES |
0.50 BVCES |
, GATE |
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0.25 BVCES |
0.25 BVCES |
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GE |
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COLLECTOR-EMITTER VOLTAGE |
V |
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CE |
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V |
0 |
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0 |
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IG(REF) |
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IG(REF) |
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20 |
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80 |
IG(ACT) |
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IG(ACT) |
TIME (μs) |
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FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE |
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON- |
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STANT GATE CURRENT (REFER TO APPLICATION |
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NOTES AN7254 AND AN7260) |
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6 |
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(V) |
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T |
J |
= +150oC |
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5 |
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VOLTAGE |
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4 |
VGE = 10V |
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3 |
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2 |
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VGE = 15V |
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CE(ON) |
1 |
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V |
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0 |
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1 |
10 |
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100 |
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT
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20 |
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(mJ) |
10 |
TJ = +150oC |
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RG = 25Ω |
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LOSS |
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L = 50μH |
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SWITCHING |
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VCE = 480V, VGE = 10V, 15V |
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1.0 |
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-OFF |
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, TURN |
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VCE = 240V, VGE = 10V, 15V |
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OFF |
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W |
0.1 |
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1 |
10 |
100 |
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
3-118
HGTA32N60E2
Typical Performance Curves (Continued)
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1.5 |
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100 |
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TJ = +150oC |
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VCE = 480V |
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-OFF DELAY (μs) |
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L = 50μH |
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1.0 |
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10 |
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(KHz)FREQUENCY |
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TURN |
0.5 |
VGE = 15V, RG = 50Ω |
OPERATING |
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VGE = 10V, RG = 50Ω |
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D(OFF)I |
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V |
GE |
= 15V, R = 25Ω |
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t |
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G |
, |
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VGE = 10V, RG = 25Ω |
OP |
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f |
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1 |
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0.0 |
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10 |
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ICE, COLLECTOR-EMITTER CURRENT (A) |
NOTE: |
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VCE = 240V |
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VCE = 480V |
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fMAX1 = 0.05/tD(OFF)I |
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fMAX2 = (PD - PC)/WOFF |
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PC = DUTY FACTOR = 50% |
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R |
θJC |
= 0.5oC/W |
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T |
= +150oC, V |
GE |
= 15V |
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J |
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RG = 25Ω, L = 50μH |
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1 |
10 |
100 |
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ICE, COLLECTOR-EMITTER CURRENT (A) |
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PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION |
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER |
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR- |
CURRENT |
EMITTER CURRENT AND VOLTAGE |
Operating Frequency Information
Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point
where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional
frequency limiting condition for an application other than
TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 10) so that the conduction losses (PC) can be approximated by PC =
(VCE x ICE)/2. WOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input
pulse and ending at the point where the collector current equals zero (ICE - 0A).
The switching power loss (Figure 10) is defined as fMAX1 x WOFF. Turn on switching losses are not included because
they can be greatly influenced by external circuit conditions and components.
3-119