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S E M I C O N D U C T O R

August 1995

HGTG30N60C3D

63A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

•63A, 600V at TC = +25oC

•Typical Fall Time - 230ns at TJ = +150oC

•Short Circuit Rating

•Low Conduction Loss

•Hyperfast Anti-Parallel Diode

Description

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

HGTG30N60C3D	TO-247	G30N60C3D

NOTE: When ordering, use the entire part number.

Formerly Developmental Type TA49014.

Package

JEDEC STYLE TO-247

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed					HGTG30N60C3D	UNITS
					HGTG30N60C3D	UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. BVCES		600	V
Collector Current Continuous
At T	C	= +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. .	. I	63	A
	C			C25
At TC = +110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. IC110	30	A
Average Diode Forward Current at +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	I(AVG)	25	A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. . ICM	252	A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	VGES	±20	V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	VGEM	±30	V
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	SSOA	60A at 600V
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. . PD	208	W
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. . . . .	1.67	W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .			T	, T	-40 to +150	oC
			J	STG		oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. .	. . . TL	260	oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . .			. .	. . tSC	4	μs
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . .			. .	. . tSC	15	μs

NOTE:

1.Repetitive Rating: Pulse width limited by maximum junction temperature.

2.VCE(PK) = 360V, TJ = +125oC, RGE = 25Ω.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073	4,417,385	4,430,792	4,443,931	4,466,176	4,516,143	4,532,534	4,567,641
4,587,713	4,598,461	4,605,948	4,618,872	4,620,211	4,631,564	4,639,754	4,639,762
4,641,162	4,644,637	4,682,195	4,684,413	4,694,313	4,717,679	4,743,952	4,783,690
4,794,432	4,801,986	4,803,533	4,809,045	4,809,047	4,810,665	4,823,176	4,837,606
4,860,080	4,883,767	4,888,627	4,890,143	4,901,127	4,904,609	4,933,740	4,963,951
4,969,027

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.							File Number 4041
Copyright © Harris Corporation 1995							File Number 4041
Copyright © Harris Corporation 1995				1
				1

Speciﬁcations HGTG30N60C3D

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

LIMITS

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector-Emitter Breakdown Voltage

BVCES

IC = 250μA, VGE = 0V

600

Emitter-Collector Breakdown Voltage

BVECS

IC = 10mA, VGE = 0V

Collector-Emitter Leakage Current

ICES

VCE = BVCES

TC = +25oC

250

μA

VCE = BVCES

TC = +150oC

3.0

Collector-Emitter Saturation Voltage

= I ,

= +25oC

1.5

1.8

CE(SAT)

C110

VGE = 15V

TC = +150oC

1.7

2.0

Gate-Emitter Threshold Voltage

= 250μA,

= +25oC

3.0

5.2

6.0

GE(TH)

VCE = VGE

Gate-Emitter Leakage Current

IGES

VGE = ±20V

±100

Switching SOA

SSOA

TJ = +150oC,

VCE(PK) = 480V

200

VGE = 15V,

VCE(PK) = 600V

RG = 3Ω,

L = 100μH

Gate-Emitter Plateau Voltage

VGEP

IC = IC110, VCE = 0.5 BVCES

8.1

On-State Gate Charge

QG(ON)

IC = IC110,

VGE = 15V

162

180

VCE = 0.5 BVCES

VGE = 20V

216

250

Current Turn-On Delay Time

tD(ON)I

TJ = +150oC,

ICE = IC110,

Current Rise Time

tRI

CE(PK)

= 0.8 BV

CES,

VGE = 15V,

Current Turn-Off Delay Time

tD(OFF)I

320

400

RG = 3Ω,

L = 100μH

Current Fall Time

tFI

230

275

Turn-On Energy

EON

1050

μJ

Turn-Off Energy (Note 1)

EOFF

2500

μJ

Diode Forward Voltage

VEC

IEC = 30A

1.75

2.2

Diode Reverse Recovery Time

tRR

IEC = 30A, dIEC/dt = 100A/μs

IEC = 1.0A, dIEC/dt = 100A/μs

Thermal Resistance

RθJC

IGBT

0.6

oC/W

Diode

1.3

oC/W

NOTE:

1.Turn-Off Energy Loss (EOFF) is deﬁned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.

							HGTG30N60C3D
Typical Performance Curves
	150									150	PULSE DURATION = 250μs, DUTY CYCLE <0.5%, T											C	= +25oC
, COLLECTOR-EMITTER CURRENT (A)	150																					C
	PULSE DURATION = 250μs								COLLECTOR-EMITTER CURRENT (A)
	PULSE DURATION = 250μs										VGE = 15.0V				12.0V								10.0V
	DUTY CYCLE <0.5%, VCE = 10V																						10.0V
	DUTY CYCLE <0.5%, VCE = 10V
	125									125
										125
	100																						9.5V
	100									100
										100
	TC = +150oC																						9.0V
	75									75													9.0V
	75

	TC = +25oC																						8.5V
	50	= -40oC								50													8.5V
	50
	T
	T																		7.0V
	C																		7.0V				8.0V
	25									25													8.0V
	25
																							7.5V
																							7.5V
CE									,
I	0								CE	0
	0								I
	4		6	8		10		12					2		4			6		8				10
	4		6	8		10		12		0			2		4			6		8				10
		VGE, GATE-TO-EMITTER VOLTAGE (V)									VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
	FIGURE 1. TRANSFER CHARACTERISTICS										FIGURE 2. SATURATION CHARACTERISTICS
(A)	150								(A)	150
	PULSE DURATION = 250μs				T		= -40oC								μ
	DUTY CYCLE <0.5%, VGE = 10V				T	C	= -40oC				PULSE DURATION = 250 s
CURRENT	DUTY CYCLE <0.5%, VGE = 10V					C			CURRENT		DUTY CYCLE <0.5%
	125									125	VGE = 15V
																			TC = +150oC
	100									100
COLLECTOR-EMITTER	100								COLLECTOR-EMITTER	100				TC = -40oC
							TC = +25oC							TC = -40oC					T	C	= +25oC
	75						TC = +25oC			75										C
	75									75
				TC = +150oC
	50									50
	25									25

,									,
CE									CE	0
I	0								I

		1	2	3			4	5		0				1	2			3		4				5
	0	1	2	3			4	5		0				1	2			3		4				5
		VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)									VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
	FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE									FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
	70								CIRCUIT WITHSTAND TIME (μs)	25													500
	VGE = 15V														Ω		o	C						SHORT CIRCUIT CURRENT (A)
, DC COLLECTOR CURRENT (A)										VCE = 360V, RGE = 25 , TJ = +125								C
	60																						450
	50									20									ISC				400
	50																		ISC
	40																						350
	40
										15													300
	30
																							250
	20									10													200
										10									tSC				200
	10																		tSC
CE	10								SHORT														150	PEAK,
CE																							150
I
									,															SC
	0								SC	5													100	SC
	0							150	t	5													100	I
	25	50	75	100			125	150		10	11				12	13			14				15
			T , CASE TEMPERATURE (oC)								V	GE		, GATE-TO-EMITTER VOLTAGE (V)
			C									GE
FIGURE 5. MAX. DC COLLECTOR CURRENT AS A FUNCTION											FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
		OF CASE TEMPERATURE
									3

HGTG30N60C3D

Typical Performance Curves (Continued)

	200		= +150oC, R		= 3Ω, L = 100μH, V
	T	J	= +150oC, R	G	= 3Ω, L = 100μH, V			= 480V
(ns)		J		G		CE(PK)
(ns)
TIME	100
	100
DELAY							VGE = 10V
DELAY	50						VGE = 15V
-ON	40						VGE = 15V
TURN,	30
	30
D(ON)I	20
D(ON)I
t
	10		20		30	40		50	60
	10		20		30	40		50	60

ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT

	500
		T	= +150oC, R	G	= 3Ω, L = 100μH, V		CE(PK)	= 480V
(ns)		J		G			CE(PK)
	400
	400
TIME
TIME	300								VGE = 15V
DELAY


									VGE = 10V
-OFF									VGE = 10V
	200
	200
, TURN
D(OFF)I
t
	100
	100		20		30	40		50		60
	10		20		30	40		50		60

ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF

COLLECTOR-EMITTER CURRENT

	500		= +150oC, R		= 3Ω, L = 100μH, V						500		o
	T	J	= +150oC, R	G	= 3Ω, L = 100μH, V			= 480V				TJ = +150	o	C, RG = 3	Ω	μ	H, VCE(PK) = 480V
		J		G		CE(PK)						TJ = +150		C, RG = 3	, L = 100		H, VCE(PK) = 480V
(ns)											400
(ns)										(ns)
TIME							VGE = 10V			(ns)	300
RISE	100									TIME								VGE = 10V
	100
ON-										FALL
ON-										FALL	200
											200
TURN										t								VGE = 15V
					VGE = 15V					,
					VGE = 15V					FI
,
RI
t
	10		20		30	40		50	60		100	20			30		40	50	60
	10		20		30	40		50	60		10	20			30		40	50	60
			ICE , COLLECTOR-EMITTER CURRENT (A)									ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF	FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT	COLLECTOR-EMITTER CURRENT

	8.0	= +150oC, R		= 3Ω, L = 100μH, V					6.0		= +150oC, R
	T	= +150oC, R	G	= 3Ω, L = 100μH, V			= 480V		T	J	= +150oC, R	G	= 3Ω, L = 100μH, V		CE(PK)	= 480V
(mJ)	J		G		CE(PK)			(mJ)	5.0	J		G			CE(PK)
(mJ)	7.0							(mJ)	5.0
LOSSENERGYON-TURN	7.0							LOSSENERGYOFF-TURN
LOSSENERGYON-TURN	6.0							LOSSENERGYOFF-TURN
	6.0
	5.0								4.0
	5.0				VGE = 10V
	4.0				VGE = 10V				3.0		VGE = 10V or 15V
	4.0								3.0
	3.0								2.0
									2.0
	2.0
,						VGE = 15V		,	1.0
ON	1.0							OFF
E	0							E
	0	20		30	40		50	60	0		20		30	40		50	60
	10	20		30	40		50	60	10		20		30	40		50	60
		ICE , COLLECTOR-EMITTER CURRENT (A)									ICE , COLLECTOR-EMITTER CURRENT (A)

FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF	FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT	COLLECTOR-EMITTER CURRENT

									HGTG30N60C3D
Typical Performance Curves (Continued)
	500										-EMITTER CURRENT (A)	250	TJ = 150oC, VGE = 15V, L = 100μH
OPERATING FREQUENCY (kHz)	500							TJ = +150oC, TC = +75oC					TJ = 150oC, VGE = 15V, L = 100μH
								TJ = +150oC, TC = +75oC
								RG = 3Ω, L = 100μH				200
												200
	100
									VGE = 15V			150
									VGE = 15V
			fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)									100		LIMITED BY
			fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)											CIRCUIT
	10 fMAX2 = (PD - PC)/(EON + EOFF)													CIRCUIT
	10 fMAX2 = (PD - PC)/(EON + EOFF)								VGE = 10V
			PD = ALLOWABLE DISSIPATION						VGE = 10V
			PC = CONDUCTION DISSIPATION									50
,						(DUTY FACTOR = 50%)					COLLECTOR,
MAX						(DUTY FACTOR = 50%)
MAX			R	θJC		= 0.6oC/W
f				θJC							CE
	1										I	0 0
	1	5				10	20	30	40	60		0 0	100	200	300	400	500	600
						ICE, COLLECTOR-EMITTER CURRENT (A)							VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF												FIGURE 14. SWITCHING SAFE OPERATING AREA
					COLLECTOR-EMITTER CURRENT
	8000										(V)			IG REF = 3.54mA, RL = 20Ω, TC = +25oC
	8000							FREQUENCY = 400kHz				600						15
												600						15
											VOLTAGE
	7000						CIES												VOLTAGE (V)
(pF)	6000											480		VCE = 600V				12
	6000

	5000											360						9

CAPACITANCEC,											, COLLECTOREMITTER-								EMITTER
	4000
	3000											240			VCE = 400V			6
																			-
	2000													VCE = 200V					, GATE
	2000						COES					120						3
							COES					120						3
	1000						CRES												GE
							CRES												V
		0									CE	0						0
		0	0			5	10	15	20	25	V	0	40		80	120	160	0
			0			5	10	15	20	25		0	40		80	120	160	200
						VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)							QG , GATE CHARGE (nC)
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-													FIGURE 16. GATE CHARGE WAVEFORMS
					EMITTER VOLTAGE
	RESPONSE		100
						0.5

	THERMAL					0.2										t1
						0.1										t1
			10-1			0.1									PD
			10-1			0.05									PD
	, NORMALIZED					0.05
						0.02										t2
						0.02
						0.01							DUTY FACTOR, D = t1 / t2
							SINGLE PULSE						DUTY FACTOR, D = t1 / t2
				-2			SINGLE PULSE						PEAK TJ = (PD X ZθJC X RθJC) + TC
			10	-2									PEAK TJ = (PD X ZθJC X RθJC) + TC
	θJC		10
	θJC
	Z
				10-5			10-4		10-3		10-2		10-1			100		101
									t1 , RECTANGULAR PULSE DURATION (s)
						FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
											5

HGTG30N60C3D

Typical Performance Curves (Continued)

	200
CURRENT (A)				+100oC
FORWARD,	10
	10
EC		+150	o	C	+25	o	C
I		+150		C	+25		C
	1
	0	0.5			1.0		1.5	2.0	2.5	3.0

VEC , FORWARD VOLTAGE (V)

FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP

TC = +25oC, dIEC/dt = 100A/μs

(ns)	50
(ns)		tRR
TIMES	40
RECOVERY,	30	tA
	30

	20	tB
		tB

R
t	10
	10
	0

1	5	10	30
	IEC , FORWARD CURRENT (A)

FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT

Test Circuit and Waveforms

L = 100μH	90%
RHRP3060	VGE	10%
	VGE
	EOFF	EON
RG = 3Ω	VCE
+	90%
+
VDD = 480V	10%
-	ICE
	tD(OFF)I	tRI
	tFI	tD(ON)I
		tD(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT	FIGURE 21. SWITCHING TEST WAVEFORMS

HGTG30N60C3D

Operating Frequency Information

Handling Precautions for IGBTs

Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a speciﬁc application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.

fMAX1 is deﬁned by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of

the on-state time for a 50% duty factor. Other deﬁnitions are possible. tD(OFF)I and tD(ON)I are deﬁned in Figure 21.

Device turn-off delay can establish an additional frequency

limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly

loaded condition.

fMAX2 is deﬁned by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is deﬁned by PD = (TJMAX - TC)/ RθJC. The sum of device switching and conduction losses

must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2.

EON and EOFF are deﬁned in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous

power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail

losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).

Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:

1.Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as † “ECCOSORBD LD26” or equivalent.

2.When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband.

3.Tips of soldering irons should be grounded.

4.Devices should never be inserted into or removed from circuits with power on.

5.Gate Voltage Rating - Never exceed the gate-voltage rat-

ing of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region.

6.Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or ﬂoating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.

7.Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.

†Trademark Emerson and Cumming, Inc.

HGTG30N60C3D

Packaging

E	A	TERM. 4
	ØS	ØP
	Q

ØR

L1		b1
		b1
L		b2	c
L		b	c
		b
1	2	3	3	2	1
	e		J1	BACK VIEW
				BACK VIEW
	e1
		LEAD NO. 1	- GATE
		LEAD NO. 2 - COLLECTOR
		LEAD NO. 3	- EMITTER
		TERM. 4	- COLLECTOR

TO-247

3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE

	INCHES		MILLIMETERS
SYMBOL					NOTES
SYMBOL	MIN	MAX	MIN	MAX	NOTES

A	0.180	0.190	4.58	4.82	-

b	0.046	0.051	1.17	1.29	2, 3

b1	0.060	0.070	1.53	1.77	1, 2
b2	0.095	0.105	2.42	2.66	1, 2
c	0.020	0.026	0.51	0.66	1, 2, 3

D	0.800	0.820	20.32	20.82	-

E	0.605	0.625	15.37	15.87	-

e	0.219 TYP		5.56 TYP		4

e1	0.438 BSC		11.12 BSC		4
J1	0.090	0.105	2.29	2.66	5
L	0.620	0.640	15.75	16.25	-

L1	0.145	0.155	3.69	3.93	1
ØP	0.138	0.144	3.51	3.65	-

Q	0.210	0.220	5.34	5.58	-

ØR	0.195	0.205	4.96	5.20	-

ØS	0.260	0.270	6.61	6.85	-

NOTES:

1.Lead dimension and ﬁnish uncontrolled in L1.

2.Lead dimension (without solder).

3.Add typically 0.002 inches (0.05mm) for solder coating.

4.Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.

5.Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.

6.Controlling dimension: Inch.

7.Revision 1 dated 1-93.

All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.

Sales Ofﬁce Headquarters

For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS

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Harris Semiconductor	Harris Semiconductor	Harris Semiconductor PTE Ltd.
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