Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

HGTH12N4

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

46.25 Кб

Скачать

☆

S E M I C O N D U C T O R

April 1995

HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D

12A, 400V and 500V N-Channel IGBTs

with Anti-Parallel Ultrafast Diodes

Features

•12A, 400V and 500V

•VCE(ON): 2.5V Max.

•TFALL: 1μs, 0.5μs

•Low On-State Voltage

•Fast Switching Speeds

•High Input Impedance

•Anti-Parallel Diode

Applications

•Power Supplies

•Motor Drives

•Protective Circuits

Description

The HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, and HGTH12N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

HGTH12N40C1D	TO-218AC	G12N40C1D

HGTH12N40E1D	TO-218AC	G12N40E1D

HGTH12N50C1D	TO-218AC	G12N50C1D

HGTH12N50E1D	TO-218AC	G12N50E1D

NOTE: When ordering, use the entire part number

Package

JEDEC TO-218AC

EMITTER

COLLECTOR

GATE

COLLECTOR (FLANGE)

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

	Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed
							HGTH12N40C1D	HGTH12N50C1D
							HGTH12N40E1D	HGTH12N50E1D		UNITS
	Collector-Emitter Voltage . . . . . . . . . . .		. . . . . . . . . . . . .	. . . . . . . . . . . . .	. . .	VCES	400	500		V
	Collector-Gate Voltage RGE = 1MΩ . . .		. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. .	VCGR	400	500		V
	Gate-Emitter Voltage	. . . . . . . . . . . . . .	. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. .	. VGE	±20	±20		V
	Collector Current Continuous . . . . . . . .		. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. .	. . . IC	12	12		A
	Collector Current Pulsed . . . . . . . . . . .		. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. .	. .ICM	17.5	17.5		A
	Power Dissipation Total at TC = +25oC		. . . . . . . . . . . . . .	. . . . . . . . . . . . .	. .	. . PD	75	75		W
	Power Dissipation Derating TC > +25oC . . . . . . . . . . . . .			. . . . . . . . . . . . .	. .	. . . .	0.6	0.6		W/oC
	Operating and Storage Junction Temperature Range . . .			. . . . . . . . . . . .	T	, T	-55 to +150	-55 to +150		oC
					J	STG
	HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073		4,417,385	4,430,792	4,443,931	4,466,176		4,516,143	4,532,534	4,567,641
4,587,713		4,598,461	4,605,948	4,618,872	4,620,211		4,631,564	4,639,754	4,639,762
4,641,162		4,644,637	4,682,195	4,684,413	4,694,313		4,717,679	4,743,952	4,783,690
4,794,432		4,801,986	4,803,533	4,809,045	4,809,047		4,810,665	4,823,176	4,837,606
4,860,080		4,883,767	4,888,627	4,890,143	4,901,127		4,904,609	4,933,740	4,963,951
4,969,027

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.								File Number		2273.3

3-33

Speciﬁcations HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D

Electrical Speciﬁcations

TC = +25oC, Unless Otherwise Speciﬁed

LIMITS

HGTH12N40C1D,

HGTH12N50C1D,

HGTH12N40E1D

HGTH12N50E1D

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

Collector-Emitter Breakdown Voltage

BVCES

IC = 1mA, VGE = 0

400

500

Gate Threshold Voltage

VGE(TH)

VGE = VCE, IC = 1mA

2.0

4.5

2.0

4.5

Zero Gate Voltage Collector Current

CES

= 400V, T

= +25oC

250

μA

= 500V, T

= +25oC

250

μA

= 400V, T

= +125oC

1000

μA

= 500V, T

= +125oC

1000

μA

Gate-Emitter Leakage Current

IGES

VGE = ±20V, VCE = 0

100

Collector-Emitter On Voltage

VCE(ON)

IC = 10A, VGE = 10V

2.5

IC = 17.5A, VGE = 20V

3.2

Gate-Emitter Plateau Voltage

VGEP

IC = 5A, VCE = 10V

6 (Typ)

On-State Gate Charge

QG(ON)

IC = 5A, VCE = 10V

19 (Typ)

Turn-On Delay Time

tD(ON)I

IC = 10A, VCE(CLP) = 300V,

L = 50μH, TJ = +100oC,

Rise Time

tRI

VGE = 10V, RG = 50Ω

(Note 9)

Turn-Off Delay Time

tD(OFF)I

400

Fall Time

tFI

40E1D, 50E1D

680

1000

680

1000

(Typ)

40C1D, 50C1D

400

500

400

500

(Typ)

Turn-Off Energy Loss per Cycle

WOFF

IC = 10A, VCE(CLP) = 300V,

(Off Switching Dissipation = W

L = 50μH, T

= +100oC,

OFF

Frequency)

VGE = 10V, RG = 50Ω

40E1D, 50E1D

1810 (Typ)

μJ

40C1D, 50C1D

1070 (Typ)

μJ

Thermal Resistance Junction-to-Case

RθJC

1.67

oC/W

Diode Forward Voltage

VEC

IEC = 10A

Diode Reverse Recovery Time

tRR

IEC = 10A, dIEC/dt =

100

100A/μs

3-34

		HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D
Typical Performance Curves
	20.0
	17.5										OF RATED POWER DISSIPATION	100
												100
,COLLECTOR CURRENT (A)	15.0
												80
	12.5	VGE = 10V, RGEN = 100Ω
	10.0											60
	7.5											40
												40
	5.0
	2.5											20
CE	2.5										%
CE											%
I
	0.0
	-75	-50	-25	0	25	50	75	100	125 150	175		0		25	50	75	100	125	150
			TJ , JUNCTION TEMPERATURE (oC)												TC , CASE TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω,											FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
		VGE = 0V ARE THE MIN. ALLOWABLE VALUES												ING CURVE
GATE THRESHOLD VOLTAGE												17.5	PULSE TEST
													PULSE TEST
	1.3											15.0	PULSE DURATION = 80μs						VCE = 10V
	1.3										COLLECTOR, CURRENT (A)		DUTY CYCLE = 0.5% MAX.


	1.2											12.5
						VGE = VCE, IC = 1mA						12.5
	1.1					VGE = VCE, IC = 1mA
	1.1											10.0
												10.0
	1
												7.5
	0.9
	0.8											5.0
	0.8														+25oC		-40oC
NORMALIZED											CE	2.5
	0.7										I	2.5
	0.7													+125oC
														+125oC
												0			2.5	5.0		7.5	10.0
	-50		0		50		100		150			0			2.5	5.0		7.5	10.0
	-50		0		50		100		150
			T J, JUNCTION TEMPERATURE												VGE, GATE-TO-EMITTER VOLTAGE (V)
			T J, JUNCTION TEMPERATURE
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD												FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
		VOLTAGE vs JUNCTION TEMPERATURE
	17.5								TC = +25oC			17.5
	17.5													PULSE TEST					VGE = 10V
		VGE = 20V							VGE = 7V					PULSE TEST					VGE = 10V
		VGE = 20V							VGE = 7V			15.0 PULSE DURATION = 80μs
	15.0	VGE = 10V									COLLECTOR CURRENT (A)	15.0 PULSE DURATION = 80μs
CURRENT (A)	15.0	VGE = 10V												DUTY CYCLE = 0.5% MAX.
	12.5	VGE = 8V							VGE = 6V			12.5
	12.5
	10.0											10.0
	10.0
												7.5				+25oC
	7.5											7.5
	7.5								VGE = 5V
									VGE = 5V
	5.0											5.0

COLLECTOR,											,
											,
											CE
CE											I	2.5
I	2.5								VGE = 4V
	2.5								VGE = 4V
	0		1		2		3		4	5			0		1	2		3	4
	0		1		2		3		4	5
		VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)												VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V)
		VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
	FIGURE 5. TYPICAL SATURATION CHARACTERISTICS										FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON VOLTAGE
														vs COLLECTOR CURRENT
											3-35

HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D

Typical Performance Curves (Continued)

	1200
	1200
						f = 0.1MHz
(pF)	1000


	800

CAPACITANCE
	400
	400		CISS
	600		CISS
C,	600


	200
	200			COSS
				COSS

	0	CRSS


	0	5		10	15	20	25
			VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
		VOLTAGE
	400

(ns)		IC = 10A, VGE = 10V, VCL = 300V
(ns)		L = 50μH, RG = 50Ω
TIMEDELAY	300
	300
, TURN OFF	200
	200
	100
D(OFF)I


t
	0
	0
	25	50		75	100	125	150
			TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. TYPICAL TURN-OFF DELAY TIME

	800	IC = 5A, VGE = 10V, VCL = 300V
		IC = 5A, VGE = 10V, VCL = 300V
	700	L = 50μH, RG = 50Ω
	600
(ns)	40E1D/50E1D
(ns)	500
TIME	500
TIME	400			40C1D/50C1D
FALL	400

	300
,	300
,
FI
t	200
	200
	100
	0
	25	50	75	100	125	150
		TJ , JUNCTION TEMPERATURE (oC)

FIGURE 11. TYPICAL FALL TIME (IC = 5A)

(V)	3.0
ON VOLTAGE	2.75
ON VOLTAGE	2.50	IC =10A, VGE = 15V
-EMITTER	2.25	IC =10A, VGE = 10V
-EMITTER
COLLECTOR	2.0
	1.75	IC = 5A, VGE = 15V
	1.75
,
CE(ON)	1.50	IC = 5A, VGE = 10V
CE(ON)
V
V	25	50	75	100	125	150
	25	50	75	100	125	150
		TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE

	WOFF = ò IC * VCEdt
VGE	IC
	VCE

FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS

	800	IC = 10A, VGE = 10V, VCL = 300V
		IC = 10A, VGE = 10V, VCL = 300V
	700	L = 50μH, RG = 50Ω
	600
(ns)	500	40E1D/50E1D
(ns)	500
TIME	400
FALL	400				40C1D/50C1D
					40C1D/50C1D
	300
,
FI
t	200
	200
	100
	0
	25	50	75	100	125	150
		TJ , JUNCTION TEMPERATURE (oC)

FIGURE 12. TYPICAL FALL TIME (IC = 10A)

3-36

HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D

Typical Performance Curves (Continued)

1000

VGE = 10V, VCE(CLP) = 300V

500

RL = 50W

VOLTAGEEMITTER-COLLECTOR(V)

(mJ)LOSSENERGYOFF-TURN,

900

IG(REF) = 0.38mA

L = 25mH, RG = 25W

VCC = BVCES

VGE = 10V

800

GATE-

700

375

EMITTER

20A, 40E1D/50E1D

VOLTAGE

600

VCC = 0.25BVCES

500

20A, 40C1D/50C1D

250

NOTE:

400

FOR TURN-OFF GATE CURRENTS IN

10A, 40E1D/50E1D

300

EXCESS OF 3mA. VCE TURN-OFF IS

125

NOT ACCURATELY REPRESENTED

200

BY THIS NORMALIZATION.

OFF

100

10A, 40C1D/50C1D

COLLECTOR-EMITTER VOLTAGE

+25

+50

+75

+100

+125

+150

IG(REF)

TIME (ms)

TJ, JUNCTION TEMPERATURE ( C)

IG(ACT)

	10
	8	(V)
	8	VOLTAGE
	6	VOLTAGE
	6	EMITTER-GATE,
	4	EMITTER-GATE,
	4
	2	GE
		GE
		V
	0

FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF	FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
SWITCHING LOSS/CYCLE	STANT GATE CURRENT (REFER TO APPLICATION
	NOTES AN7254 AND AN7260)

	100
CURRENT (A)	10							TJ = +150oC
-COLLECTOR								TJ = +150oC
						TJ = +100oC
	1					TJ = +25	o	C
, EMITTER						TJ = +25		C
					TJ = -50oC

EC
I	0.1
	0.1
	0.4	0.6	0.8	1	1.2	1.4		1.6	1.8	2
		VEC , EMITTER-COLLECTOR VOLTAGE (V)

FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR VOLTAGE vs CURRENT

TYPICAL REVERSE RECOVERY TIME

(ns)
TIME	60
TIME
RECOVERY	50
	40
	30				dIEC/dT ³ 100A/ms
, REVERSE	30				V	R	= 30V, T		J	= +25oC
						R			J
	20
	10
RR	10
t
	0	2	4	6	8	10		12		14	16	18	20
			IEC , EMITTER-COLLECTOR CURRENT (A)

FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME

Test Circuit

	RL = 13W
	L = 50mH
1/RG = 1/RGEN + 1/RGE	VCC	130V
RGEN = 100W	VCE(CLP) =
	300V
20V
0V	RGE = 100W
0V

FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT

3-37

Соседние файлы в папке I_G_B_TR

#
06.01.202242.23 Кб63HGTG24N6.PDF
#
06.01.202253.58 Кб63HGTG30N1.PDF
#
06.01.2022130.61 Кб63HGTG30N6.PDF
#
06.01.202248.59 Кб63HGTG32N6.PDF
#
06.01.202252.35 Кб63HGTG34N1.PDF
#
06.01.202246.25 Кб63HGTH12N4.PDF
#
06.01.202247.03 Кб63HGTH20N4.PDF
#
06.01.202250.27 Кб63HGTP10N4.PDF
#
06.01.202241.64 Кб63HGTP12N6.PDF
#
06.01.2022121.41 Кб63HGTP14N3.PDF
#
06.01.2022113.49 Кб63HGTP14N4.PDF