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HGTP20N3

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S E M I C O N D U C T O R

April 1995

HGTP20N35G3VL,

HGT1S20N35G3VL,

HGT1S20N35G3VLS

20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

Features

•Logic Level Gate Drive

•Internal Voltage Clamp

•ESD Gate Protection

•TJ = 175oC

•Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

HGTP20N35G3VL	T0-220AB	20N35GVL

HGT1S20N35G3VL	T0-262AA	20N35GVL

HGT1S20N35G3VLS	T0-263AB	20N35GVL

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A.

The development type number for this device is TA49076.

Packages

JEDEC TO-220AB

EMITTER COLLECTOR

GATE

COLLECTOR (FLANGE)

JEDEC TO-262AA

	EMITTER	COLLECTOR
		COLLECTOR
COLLECTOR		GATE
COLLECTOR
(FLANGE)

JEDEC TO-263AB

COLLECTOR (FLANGE)

GATE

EMITTER

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

COLLECTOR

GATE

EMITTER


	Absolute Maximum Ratings T = +25oC, Unless Otherwise Speciﬁed
		C					HGTP20N35G3VL
							HGTP20N35G3VL
							HGT1S20N35G3VL
	Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ						HGT1S20N35G3VLS	UNITS
	Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ				. BVCER		375	V
	Emitter-Collector Bkdn Voltage At 10mA . . . . .		.	=. .+25. . .o.C,. .Figure. . . . . .7. . . . . . . . . . .	. BVECS		24	V
	Collector Current Continuous At V	= 5.0V, T	C	=. .+25. . .o.C,. .Figure. . . . . .7. . . . . . . . . . .	. . . I	C25	20	A
		GE	C			C25
	At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . .				. . .IC100		20	A
	Gate-Emitter-Voltage (Note) . . . . .	. . . . . . . . . .	.	. . . . . . . . . . . . . . . . . . . . . . . . .	. . VGES		±10	V
	Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . .				. . ISCIS		26	A
	At L = 2.3mH, TC = +175oC . . . . . . . . . . . . . . . . . . .				. . ISCIS		18	A
	Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . .				. . . EAS		775	mJ
	Power Dissipation Total At TC = +25oC . . . . . .		.	. . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	PD	150	W
	Power Dissipation Derating TC > +25oC. . . . . .		.	. . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	. .	1.0	W/oC
	Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .				TJ, TSTG		-40 to +175	oC
	Maximum Lead Temperature for Soldering . . .		.	. . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	.TL	260	oC
	Electrostatic Voltage at 100pF, 1500Ω . . . . . . .		.	. . . . . . . . . . . . . . . . . . . . . . . . .	. . . ESD		6	KV
	NOTE: May be exceeded if IGEM is limited to 10mA.


Copyright © Harris Corporation 1995								File Number 4006
				3-66

Speciﬁcations HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

LIMITS

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector-Emitter Breakdown Voltage

BVCES

IC = 10mA,

TC = +175oC

310

345

380

VGE = 0V

TC = +25oC

320

350

380

TC = -40oC

320

355

390

Collector-Emitter Breakdown Voltage

BVCER

IC = 10mA

TC = +175oC

300

340

375

VGE = 0V

TC = +25oC

RGE = 1kΩ

315

345

375

TC = -40oC

315

350

390

Gate-Emitter Plateau Voltage

VGEP

IC = 10A

TC = +25oC

3.7

VCE = 12V

Gate Charge

QG(ON)

IC = 10A

TC = +25oC

28.7

VGE = 5V

VCE = 12V

Collector-Emitter Clamp Bkdn. Voltage

BVCE(CL)

IC = 10A

TC = +175oC

325

360

395

RG = 0Ω

Emitter-Collector Breakdown Voltage

BVECS

IC = 10mA

TC = +25oC

Collector-Emitter Leakage Current

= 250V

= +25oC

μA

CES

VCE = 250V

TC = +175oC

250

μA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC = 10A

TC = +25oC

1.3

1.6

VGE = 4.5V

TC = +175oC

1.25

1.5

IC = 20A

TC = +25oC

1.6

2.8

VGE = 5.0V

TC = +175oC

1.9

3.5

Gate-Emitter Threshold Voltage

VGE(TH)

IC = 1mA

TC = +25oC

1.3

1.8

2.3

VCE = VGE

Gate Series Resistance

TC = +25oC

1.0

kΩ

Gate-Emitter Resistance

TC = +25oC

kΩ

Gate-Emitter Leakage Current

IGES

VGE = ±10V

±400

±590

±1000

μA

Gate-Emitter Breakdown Voltage

BVGES

IGES = ±2mA

±12

±14

Current Turn-Off Time-Inductive Load

tD(OFF)I +

IC = 10A, RG = 25Ω,

μs

tF(OFF)I

L = 550µH, RL = 26.4Ω, VGE = 5V,

VCL = 300V, TC = +175oC

Inductive Use Test

ISCIS

L = 2.3mH,

TC = +175oC

VG = 5V,

TC = +25oC

RG = 0Ω

Thermal Resistance

RθJC

1.0

oC/W

3-67

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Typical Performance Curves

PULSE DURATION = 250μs, DUTY CYCLE <0.5%, VCE = 10V

(A)	50
(A)
CURRENT	40
EMITTER-	30
	30
		TC = +175oC
COLLECTOR,	20	TC = +25oC
COLLECTOR,		TC = -40oC
		TC = -40oC
	10
CE
I	0
	0
	1	2	3	4	5	6

VGE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS

ICE, COLLECTOR-EMITTER CURRENT (A)

PULSE DURATION = 250μs, DUTY CYCLE <0.5%, TC = +25oC

100	7V
VGE=10V	7V
VGE=10V	6.5V	6.0V
		6.0V
80		5.5V
		5.5V
60		5.0V
60
		4.5V
40		4.0V
		4.0V
		3.5V

3.0V

2.5V

0	2	4	6	8	10
	VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 2. SATURATION CHARACTERISTICS

(A)		T = +175oC
CURRENT	40	C
	40
				VGE = 5.0V
				VGE = 5.0V
EMITTER	30	VGE = 4.5V
		VGE = 4.5V
	20
COLLECTOR,				VGE = 4.0V
				VGE = 4.0V
	10
CE
I	0
	0
	0	1	2	3	4

VCE(SAT) , SATURATION VOLTAGE (V)

FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE

(A)	50
(A)		VGE = 4.5V	-40oC
CURRENT	40				+25oC
					+25oC

EMITTER	30				+175oC
EMITTER

COLLECTOR,	20
COLLECTOR,	10
	10
CE	0
I	0
	0	1	2	3	4	5
		VCE(SAT) , SATURATION		VOLTAGE (V)

FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE

(V)

1.4

ICE = 10A

VOLTAGE

1.3

VGE = 4.0V

, SATURATION

1.2

VGE = 4.5V

VGE

= 5.0V

CE(SAT)

1.1

-25

+25

+75

+125

+175

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE

	2.2
(V)	2.1	ICE = 20A
(V)		ICE = 20A
VOLTAGE


	2.0			VGE = 4.0V
SATURATION,	2.0			VGE = 4.0V
	1.7
	1.7
	1.9
	1.9

CE(SAT)	1.8			VGE = 4.5V



	1.6			VGE = 54.5V0
V	1.6			VGE = 54.5V0
V	1.5
	1.5
	-25		+25	+75	+125	+175

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE

3-68

		HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
COLLECTOR-EMITTER CURRENT (A)	25							NORMAILZED THRESHOLD VOLTAGE	1.2					ICE = 1mA
						VGE = 5.0V								ICE = 1mA
						VGE = 5.0V			1.1
	20								1.1
	20
	PACKAGE LIMITED								1.0
									1.0
	15								0.9
									0.9
	10								0.8
	10
									0.7
	5								0.6
									0.6
,								,
CE								TH
I	0	+50						V	0.5
	0								0.5
	+25		+75	+100	+125	+150	+175			-25	+25	+75		+125	+175
		T	, CASE TEMPERATURE (oC)							T	, JUNCTION TEMPERATURE (oC)
		C								J
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION								FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
		OF CASE TEMPERATURE								FUNCTION OF JUNCTION TEMPERATURE
	105								18
									VCL= 300V, RGE = 25Ω, VGE = 5V, L= 550µH
(µA)	104		VECS = 20V					(µs)
			VECS = 20V						16
									16

CURRENT	103							TURN, OFF TIME
										ICE = 6A, RL= 50Ω
	102								14
	101		VCES = 250V										ICE =10A, RL= 30Ω
LEAKAGE			VCES = 250V					(OFF)I	12		ICE =15A, RL= 20Ω
	100							(OFF)I
	100							t
	10-1						+175		10	+50		+100	+125	+150	+175
	+25	+50	+75	+100	+125	+150	+175		+25	+50	+75	+100	+125	+150	+175
		TJ , JUNCTION TEMPERATURE (oC)								TJ , JUNCTION TEMPERATURE (oC)
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF								FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF										JUNCTION TEMPERATURE
		JUNCTION TEMPERATURE								JUNCTION TEMPERATURE
		JUNCTION TEMPERATURE
(A)	45					VGE = 5V			1200
(A)						VGE = 5V								VGE = 5V
-EMITTER CURRENT	40													VGE = 5V
	40
	35	+25oC							1000
	35	+25oC						ENERGY (mJ)				+25oC
	30								800
									800
	25
									600
COLLECTOR	20							,	600
	20							AS
								AS
	15	+175oC						E	400			+175oC
		+175oC							400			+175oC
	10
,	10
CE
I	5								200
	5								200
	0	2		4	6	8	10		0	2	4	6		8	10
			INDUCTANCE (mH)								INDUCTANCE (mH)
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING								FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
		CURRENT AS A FUNCTION OF INDUCTANCE								ENERGY AS A FUNCTION OF INDUCTANCE
							3-69

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Typical Performance Curves (Continued)

	1600
				FREQUENCY = 1MHz
	1400
(pF)	1200
(pF)			CIES
CAPACITANCEC,	1000
	1000
	800
	600
	400		COES
	200
			CRES
	0	5	10	15	20	25
		VCE , COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE

VCE, COLLECTOR-EMITTER VOLTAGE (V)

	IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC
12				6
10				5	(V)
10				5	VOLTAGE
	VCE = 12V				VOLTAGE
	VCE = 12V
8				4	EMITTER-
6		VCE = 8V		3	EMITTER-
	VCE = 4V
4				2	, GATE
				1	, GATE
2				1	GE
					V
0				0
0	10	20	30	40

QG, GATE CHARGE (nC)

FIGURE 14. GATE CHARGE WAVEFORMS

RESPONSE	100	0.2
		0.5
			t1
THERMAL			PD
THERMAL	10-1	0.1	t2
		0.1	t2
		0.05
NORMALIZED,		0.05
NORMALIZED,	10-2	SINGLE PULSE	DUTY FACTOR, D = t1 / t2
		0.02	DUTY FACTOR, D = t1 / t2
		0.01	PEAK TJ = (PD X ZθJC X RθJC) + TC
θJC
Z

10-5	10-3	10-1	101
	t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 15. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE

Test Circuits

2.3mH

VDD

	C
RGEN = 25Ω	RG
	DUT
5V	G
5V
	E

FIGURE 17. USE TEST CIRCUIT

350

EMITTER-COLLECTOR

VOLTAGE(V)

ICER = 10mA

345

= +25

oC AND +175oC

CER

BKDN

340

335
0	2000	4000	6000	8000	10000

RGE , GATE-TO-EMITTER RESISTANCE (V)

FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF

GATE - EMITTER RESISTANCE

	RL
	L = 550μH
	C
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω	DUT	+
RGEN = 50Ω	G	+	VCC
			VCC
10V		-	300V
	RGE = 50Ω
	E

FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT

3-70

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