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harris / CA3045

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S E M I C O N D U C T O R

Marchy19941993

CA3045, CA3046

General Purpose N-P-N

Transistor Arrays

Features

•Two Matched Transistors: VBE Matched ±5mV; Input Offset Current 2μA Max at IC = 1mA

•5 General Purpose Monolithic Transistors

•Operation From DC to 120MHz

•Wide Operating Current Range

•Low Noise Figure 3.2dB Typical at 1kHz

•Full Military Temperature Range -55oC to +125oC

Description

The CA3045 and CA3046 each consist of ﬁve general purpose silicon n-p-n transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair.

The transistors of the CA3045 and CA3046 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very signiﬁcant inherent integrated circuit advantages of close electrical and thermal matching.

Applications

•Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range

•Custom Designed Differential Ampliﬁers

•Temperature Compensated Ampliﬁers

•See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array” for Suggested Applications

Ordering Information

PART	TEMPERATURE
NUMBER	RANGE	PACKAGE

CA3045	-55oC to +125oC	14 Lead Ceramic Sidebraze DIP
CA3045F	-55oC to +125oC	14 Lead Ceramic DIP

CA3046	-55oC to +125oC	14 Lead Plastic DIP
CA3046M	-55oC to +125oC	14 Lead SOIC

CA3046M96	-55oC to +125oC	14 Lead SOIC*

* Denotes Tape and Reel

Pinout

	CA3045, CA3046
	(PDIP, CDIP, SOIC)
		TOP VIEW
	1		14
	2	Q5	13 SUBSTRATE
	2	Q1	13 SUBSTRATE
DIFFERENTIAL	3		12
PAIR	3		12
PAIR
	4	Q2	11
	5	Q4	10
	5		10
	6		9
	7	Q3	8
		Q3

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.	File Number 341.2

6-15

Speciﬁcations CA3045, CA3046

Absolute Maximum Ratings (T = +25oC)							Operating Conditions
					A
Collector-to-Emitter Voltage (V					) . . . . . . . . . . . . . . . . .	. . . . . 15V	Operating Temperature Range . . . . . . . . . . . .	-55oC ≤ T	≤ +125oC
			CEO					A		≤ 150oC
Collector-to-Base Voltage (V			CBO	) .	. . . . . . . . . . . . . . . . . .	. . . . . 20V	Storage Temperature Range. . . . . . . . . . . . . .	. .-65oC ≤ T		≤ 150oC
			CBO					A
Collector-to-Substrate Voltage (VCIO) (Note 1) . . . . . . . . . .						. . . . 20V
Emitter-to-Base Voltage (VEBO) .				.	. . . . . . . . . . . . . . . . . . .	. . . . . 5V
Collector Current (IC) . . . . . .			. . .	.	. . . . . . . . . . . . . . . . . . .	. . . 50mA
Power Dissipation
CA3045	= +75oC				Each Transistor	Total Pkg.
Up to T	= +75oC		. . .	.	. . . . . 300mW	750mW
A		= +75oC			Derate Linearly 8mW/oC
Above T		= +75oC	. . .	.	Derate Linearly 8mW/oC
A
CA3046, CA3045F					Each Transistor	Total Pkg.
Up to T	= +55oC. . . . . .		. . .	.	. . . . . 300mW	750mW
A		= +55oC			Derate Linearly 6.67mW/oC
Above T		= +55oC	. . .	.	Derate Linearly 6.67mW/oC
A						+175oC
Junction Temperature . . . . . .			. . .	.	. . . . . . . . . . . . . . . . . . .	+175oC
Junction Temperature (Plastic Package) . . . . . . . . . . . . . .						. +150oC
Lead Temperature (Soldering 10 Sec.). . . . . . . . . . . . . . . .						. +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations TA = +25oC, Characteristics apply for each transistor in CA3045 & CA3046 as speciﬁed.

								LIMITS

PARAMETERS	SYMBOL				TEST CONDITIONS		MIN	TYP	MAX	UNITS

STATIC CHARACTERISTICS

Collector-to-Base Breakdown Voltage	V(BR)CBO				IC = 10μA, IE = 0		20	60	-	V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO				IC = 1mA, IB = 0		15	24	-	V
Collector-to-Substrate Breakdown Voltage	V(BR)CIO				IC = 10μA, ICI = 0		20	60	-	V
Emitter-to-Base Breakdown Voltage	V(BR)EBO				IE = 10μA, IC = 0		5	7	-	V
Collector Cutoff Current (Figure 1)		ICBO			VCB = 10V, IE = 0		-	0.002	40	nA
Collector Cutoff Current (Figure 2)		ICEO			VCE = 10V, IB = 0		-	See Fig. 2	0.5	μA
Static Forward Current Transfer Ratio (Static		hFE			VCE = 3V	IC = 10mA	-	100	-	-
Beta) (Note 2) (Figure 3)
Beta) (Note 2) (Figure 3)						IC = 1mA	40	100	-	-
						IC = 1mA	40	100	-	-
						IC = 10μA	-	54	-	-

Input Offset Current for Matched Pair Q1 and					VCE = 3V, IC = 1mA		-	0.3	2	μA
Q2. \|IIO1 - IIO2\| (Note 2) (Figure 4)
Base-to-Emitter Voltage (Note 2) (Figure 5)		VBE			VCE = 3V	IE = 1mA	-	0.715	-	V
						IE = 10mA	-	0.800	-	V

Magnitude of Input Offet Voltage for Differen-					VCE = 3V, IC = 1mA		-	0.45	5	mV
tial Pair \|VBE1 - VBE2\| (Note 2) (Figures 5, 7)
Magnitude of Input Offset Voltage for Isolated					VCE = 3V, IC = 1mA		-	0.45	5	mV
Transistors \|VBE3 - VBE4\|, \|VBE4 - VBE5\|,
\|VBE5 - VBE3\| (Note 2) ( Figures 5, 7)
Temperature Coefficient of Base-to-Emitter		V	BE		VCE = 3V, IC = 1mA		-	-1.9	-	mV/oC
Voltage (Figure 6)			BE

			T
			T

Collector-to-Emitter Saturation Voltage		VCES			IB = 1mA, IC = 10mA		-	0.23	-	V
Temperature Coefficient: Magnitude of Input		V		IO	VCE = 3V, IC = 1mA		-	1.1	-	μV/oC
Temperature Coefficient: Magnitude of Input		V			VCE = 3V, IC = 1mA		-	1.1	-	μV/oC
Offset Voltage (Figure 7)

			T
			T

6-16

Speciﬁcations CA3045, CA3046

Electrical Speciﬁcations T = +25oC, Characteristics apply for each transistor in CA3045 & CA3046 as speciﬁed. (Continued)
	A

									LIMITS

	PARAMETERS	SYMBOL		TEST CONDITIONS				MIN	TYP	MAX	UNITS

DYNAMIC CHARACTERISTICS

Low Frequency Noise Figure (Figure 9)		NF		f = 1kHz, VCE = 3V, IC = 100μA,				-	3.25	-	dB
				Source Resistance = 1kΩ

Low Frequency, Small Signal Equivalent
Circuit Characteristics
	Forward Current Transfer Ratio (Figure 11)	hFE		f = 1kHz, VCE = 3V, IC = 1mA				-	110	-	-
	Short Circuit Input Impedance (Figure 11)	hIE		f = 1kHz, VCE = 3V, IC = 1mA				-	3.5	-	kΩ
	Open Circuit Output Impedance (Figure 11)	hOE		f = 1kHz, VCE = 3V, IC = 1mA				-	15.6	-	μmho
	Open Circuit Reverse Voltage Transfer	h	RE	f = 1kHz, V	CE	= 3V, I	= 1mA	-	1.8 x 10-4	-	-
	Ratio (Figure 11)		RE		CE		C
	Ratio (Figure 11)

Admittance Characteristics
	Forward Transfer Admittance (Figure 12)	YFE		f = 1kHz, VCE = 3V, IC = 1mA				-	31 - j1.5	-	-
	Input Admittance (Figure 13)	YIE		f = 1kHz, VCE = 3V, IC = 1mA				-	0.3 + j0.04	-	-
	Output Admittance (Figure 14)	YOE		f = 1kHz, VCE = 3V, IC = 1mA				-	0.001 + j0.03	-	-
	Reverse Transfer Admittance (Figure 15)	YRE		f = 1kHz, VCE = 3V, IC = 1mA				-	See Fig. 14	-	-
Gain Bandwidth Product (Figure 16)		fT		VCE = 3V, IC = 3mA				300	550	-	MHz
Emitter-to-Base Capacitance		CEB		VEB = 3V, IE = 0				-	0.6	-	pF
Collector-to-Base Capacitance		CCB		VCB = 3V, IC = 0				-	0.58	-	pF
Collector-to-Substrate Capacitance		CCI		VCS = 3V, IC = 0				-	2.8	-	pF
NOTE:

1.The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

2.Actual forcing current is via the emitter for this test.

Typical Performance Curves

	102	IE = 0
		IE = 0
(nA)	10
CURRENT			VCB = 15V
	1		VCB = 10V
	1		VCB = 5V
			VCB = 5V
CUTOFF	10-1
CUTOFF
COLLECTOR	10-2
	10-3

	10-4
	0	25	50	75	100	125

AMBIENT TEMPERATURE (oC)

FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR

	103	IB = 0
		IB = 0
(nA)	102
CURRENT	10		VCE = 10V
CURRENT
CUTOFF	1		VCE = 5V
CUTOFF
COLLECTOR	10-1
	10-2

	10-3
	0	25	50	75	100	125
			AMBIENT TEMPERATURE (oC)

FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR

6-17

CA3045, CA3046

Typical Performance Curves (Continued)

	120									1.1
	120	VCE = 3V								1.1
		VCE = 3V
		TA = +25oC
CURRENTFORWARDSTATIC (hRATIOTRANSFER	110	TA = +25oC				hFE					RATIOBETA
	110					hFE

)
FE	100									1.0
FE	100									1.0
	90
	90				h F E 1		O R	h F E 2		0.9
	80

					h F E 2			h F E 1
	70				h F E 2			h F E 1


	60									0.8
	60									0.8
	50
	50		0.1	1.0					10
	0.01		0.1	1.0					10

EMITTER CURRENT (mA)

FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO AND BETA RATIO FOR Q1 AND Q2 vs EMITTER CURRENT

0.8
0.8	VCE = 3V
	VCE = 3V
	T	= +25oC
	A
VOLTAGEEMITTER-TO-BASE(V)						3	(mV)VOLTAGEOFFSETINPUT


0.7			VBE
0.7			VBE
0.6						2


0.5						1


		INPUT OFFSET VOLTAGE
0.4						0
0.4						0
0.01		0.1		1.0	10

EMITTER CURRENT (mA)

FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTICS AND INPUT OFFSET VOLTAGE FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs EMITTER CURRENT


		VCE = 3V
(mV)	4.00



	3.00		IE = 10mA
			IE = 10mA
VOLTAGE

	2.00
OFFSET	2.00
	0.75		IE	= 1mA



INPUT	0.50
	0.50

	0.25		IE	= 0.1mA
	0.25

0 -75 -50 -25 0 25 50 75 100 125

TEMPERATURE (oC)

FIGURE 7. TYPICAL INPUT OFFSET VOLTAGE CHARACTERISTICS FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs TEMPERATURE

	10
	10	VCE = 3V
		VCE = 3V
		T	= +25oC
		A
(μA)
(μA)
OFFSETCURRENT	0.1
INPUT	1.0
	0.01







	0.01		0.1	1.0	10

COLLECTOR CURRENT (mA)

FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR MATCHED TRANSISTOR PAIR Q1Q2 vs COLLECTOR CURRENT

		VCE = 3V
(V)	1.0
(V)
VOLTAGE	0.9
VOLTAGE	0.8
TO-EMITTER	0.8
	0.7
	0.6	IE = 3mA
-
BASE			IE = 1mA
			IE = 1mA
	0.5			IE = 0.5mA
	0.5
	0.4
	-75	-50	-25	0	25	50	75	100	125
				TEMPERATURE (oC)

FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC vs TEMPERATURE FOR EACH

	TRANSISTOR
	VCE = 3V
	RS = 500Ω
	TA = +25oC
	20
(dB)	15	f = 0.1kHz
(dB)
FIGURE
		f = 1kHz

NOISE	10	f = 10kHz
		f = 10kHz

	5
	0
	0.01	0.1	1.0
		COLLECTOR CURRENT (mA)

FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT

6-18

CA3045, CA3046

Typical Performance Curves (Continued)

		VCE = 3V
		RS = 1000Ω
	20	TA = +25oC
	20
(dB)	15	f = 0.1kHz
FIGURE		f = 0.1kHz

		f = 1kHz

NOISE	10	f = 10kHz
		f = 10kHz

	5
	0	0.01	0.1	1
		0.01	0.1	1

COLLECTOR CURRENT (mA)

FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT

	30	VCE = 3V
		VCE = 3V
		RS = 10000Ω
	25	T	= +25oC
		A
(dB)	20		f = 0.1kHz
(dB)
FIGURE
	15		f = 1kHz

NOISE	10		f = 10kHz
	10

	5
	0	0.01	0.1	1
		0.01	0.1	1

COLLECTOR CURRENT (mA)

FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT

	100
	VCE = 3V
	f = 1kHz
	T	= +25oC	hFE = 110		h
PARAMETERSh	A		hFE = 110		OE
PARAMETERSh			hIE = 3.5kΩ	AT
		hIE	hRE = 1.88 x 10-4	1mA
	10 h		hOE = 15.6μmho
NORMALIZED	RE
NORMALIZED	1.0				hFE
					hFE

				hRE
	0.1				hIE
	0.01		0.1	1.0	10
			COLLECTOR CURRENT (mA)

FIGURE 11. TYPICAL NORMALIZED FORWARD CURRENT TRANSFER RATIO, SHORT CIRCUIT INPUT IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO vs COLLECTOR CURRENT

)			COMMON EMITTER CIRCUIT, BASE INPUT
FE			COMMON EMITTER CIRCUIT, BASE INPUT
FE			TA = +25oC, VCE = 3V, IC = 1mA
(g	) (mmhos)	40	TA = +25oC, VCE = 3V, IC = 1mA
FORWARD TRANSFER CONDUCTANCE		40
		30

	FE		gFE
	OR SUSCEPTANCE (b	20	gFE
		10
		0	bFE
		-10	bFE
		-20
		-20

0.1	1	10	100
		FREQUENCY (MHz)

FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCE vs FREQUENCY

COMMON EMITTER CIRCUIT, BASE INPUT

	)(mmhos)		T	= +25oC, V	CE	= 3V, I	C	= 1mA
		5	A		CE		C
)		5
)
IE
(g		4
INPUTCONDUCTANCE	IE
	OR SUSCEPTANCE (b	3							bIE
									bIE
		2
		1				gIE
						gIE
		0	0.1		1			10	100
			0.1		1			10	100

FREQUENCY (MHz)

FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY

		COMMON EMITTER CIRCUIT, BASE INPUT
		6	= +25oC, V		= 3V, I		= 1mA
		T	= +25oC, V	CE	= 3V, I	C	= 1mA
	(mmhos)	A		CE		C
)
OE		5
(g		5
(g
OUTPUTCONDUCTANCE	)
	OE	4						bOE
	OR SUSCEPTANCE (b							bOE
		3
		2
		1
								gOE
								gOE
		0		1			10	100
		0.1		1			10	100

FREQUENCY (MHz)

FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY

6-19

CA3045, CA3046

Typical Performance Curves (Continued)

)			COMMON EMITTER CIRCUIT, BASE INPUT
RE			COMMON EMITTER CIRCUIT, BASE INPUT
RE			TA = +25oC, VCE = 3V, IC = 1mA
CONDUCTANCETRANSFERREVERSE(g	(mmhos)		TA = +25oC, VCE = 3V, IC = 1mA	PRODUCTBANDWIDTHGAIN(MHz)
	(mmhos)		LESS THAN 500MHz
	(bSUSCEPTANCEOR		gRE IS SMALL AT FREQUENCIES
			gRE IS SMALL AT FREQUENCIES
	)	0
	RE
		-0.5		bRE
		-1.0
		-1.5
		-2.0	10	100
		1	10	100
			FREQUENCY (MHz)

VCE = 3V TA = +25oC

1000

900

800

700

600

500

400

300

200

100

0	1	2	3	4	5	6	7	8	9	10	11	12	13 14
				COLLECTOR CURRENT (mA)

FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCE vs	FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs
FREQUENCY	COLLECTOR CURRENT

6-20

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