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S E M I C O N D U C T O R

March 1993

CA3018

General Purpose Transistor Arrays

Features

•	Matched Monolithic General Purpose Transistors
• hFE Matched . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			.±10%
•	VBE Matched
	-	CA3018A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	±2mV
	-	CA3018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	±5mV

•Operation From DC to 120MHz

•Wide Operating Current Range

•CA3018A Performance Characteristics Controlled from 10μA to 10mA

• Low Noise Figure . . . . . . . . . . . . . 3.2dB Typical at 1kHz

• Full Military Temperature Range . . . . -55oC to +125oC

Applications

•Two Isolated Transistors and a Darlington Connected Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range

•Custom Designed Differential Ampliﬁers

•Temperature Compensated Ampliﬁers

•See Application Note, AN5296 “Application of the CA3018 Integrated Circuit Transistor Array” for Suggested Applications

Description

The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate.

Two of the four transistors are connected in the Darlington conﬁguration. The substrate is connected to a separate terminal for maximum ﬂexibility.

The transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits but in addition they provide the advantages of close electrical and thermal matching inherent in integrated circuit construction.

The CA3018A is similar to the CA3018 but features tighter control of current gain, leakage, and offset parameters making it suitable for more critical applications requiring premium performance.

Ordering Information

PART	TEMPERATURE
NUMBER	RANGE	PACKAGE

CA3018	-55oC to +125oC	12 Pin CAN

CA3018A	-55oC to +125oC	12 Pin CAN

Pinout

CA3018, CA3018A

(TO-5 CAN)

TOP VIEW

		12
	1	11
		Q4
2			10 SUBSTRATE
3		Q3	9
4	Q2	Q1	8
	Q2
	5	7
		6

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.		File Number 338.2

Copyright © Harris Corporation 1993	6-5
	6-5

Speciﬁcations CA3018, CA3018A

Absolute Maximum Ratings (T = +25oC)			Operating Conditions
A
	CA3018	CA3018A	Operating Temperature Range . . . . . . . . . . . .	-55oC ≤ T	≤ +125oC
				A	≤ +150oC
Collector-to-Emitter Voltage, V . . . . . . . . .	. . 15V	15V	Storage Temperature Range. . . . . . . . . . . . . .	-65oC ≤ T	≤ +150oC
CEO				A
Collector-to-Base Voltage, VCBO . . . . . . . . . .	. . 20V	30V
Collector-to-Substrate Voltage, VCIO (Note 1)	. . 20V	40V
Emitter-to-Base Voltage, VEBO . . . . . . . . . . . .	. . 5V	5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . .	. . 50mA	50mA
Power Dissipation
Any One Transistor . . . . . . . . . . . . . . . . . . .	. . . . . . . . .	. . 300mW
Total Package . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . .	. 450mW
T > +85oC . . . . . . . . . . . . . . . . . . . . . . . . .	. . . Derate at 5mW/oC
A		+175oC
Junction Temperature . . . . . . . . . . . . . . . . . . .	. . . . . . . . . .	+175oC
Lead Temperature (Soldering 10 Sec.). . . . . .	. . . . . . . . . .	. +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations	T = +25oC
	A

								LIMITS

							CA3018			CA3018A

PARAMETERS	SYMBOL			TEST CONDITIONS		MIN	TYP	MAX	MIN		TYP	MAX	UNITS

STATIC CHARACTERISTICS

Collector Cutoff Current		ICBO		VCB = 10V, IE = 0		-	0.002	100	-		0.002	40	nA
(Figure 1)

Collector Cutoff Current		ICEO		VCE = 10V, IB = 0		-	See	5	-		See	0.5	μA
(Figure 2)							Fig. 2				Fig. 2

Collector Cutoff Current		ICEOD		VCE = 10V, IB = 0		-	-	-	-		-	5	μA
Darlington Pair

Collector-to-Emitter		V(BR)CEO		IC = 1mA, IB = 0		15	24	-	15		24	-	V
Breakdown Voltage

Collector-to-Base Breakdown		V(BR)CBO		IC = 10μA, IE = 0		20	60	-	30		60	-	V
Voltage

Emitter-to-Base Breakdown		V(BR)EBO		IE = 10μA, IC = 0		5	7	-	5		7	-	V
Voltage

Collector-to-Substrate		V(BR)CIO		IC = 10μA, ICI = 0		20	60	-	40		60	-	V
Breakdown Voltage

Collector-to-Emitter		VCES		IB = 1mA, IC = 10mA		-	0.23	-	-		0.23	0.5	V
Saturation Voltage

Static Forward Current		hFE		VCE = 3V	IC = 10mA	-	100	-	50		100	-	-
Transfer Ratio (Note 2)
Transfer Ratio (Note 2)					IC = 1mA	30	100	200	60		100	200	-
(Figure 3)					IC = 1mA	30	100	200	60		100	200	-
					IC = 10μA	-	54	-	30		54	-	-
Magnitude of Static-Beta				VCE = 3V,		0.9	0.97	-	0.9		0.97	-	-
Ratio (Isolated Transistors Q1				IC1 = IC2 = 1mA
and Q2) (Figure 3)
Static Forward Current		hFED		VCE = 3V	IC = 1mA	1500	5400	-	2000		5400	-	-
Transfer Ratio Darlington Pair
Transfer Ratio Darlington Pair					IC = 100μA	-	-	-	1000		2800	-	-
(Q3 and Q4) (Figure 4)					IC = 100μA	-	-	-	1000		2800	-	-

Base-to-Emitter Voltage		VBE		VCE = 3V	IE = 1mA	-	0.715	-	0.600		0.715	0.800	V
(Figure 5)
(Figure 5)					IE = 10mA	-	0.800	-	-		0.800	0.900	V
					IE = 10mA	-	0.800	-	-		0.800	0.900	V

Input Offset Voltage		V	BE1	VCE = 3V, IE = 1mA		-	0.48	5	-		0.48	2	mV
Input Offset Voltage		V		VCE = 3V, IE = 1mA		-	0.48	5	-		0.48	2	mV
(Figures 5, 7)
(Figures 5, 7)		−VBE2
		−VBE2

6-6

Speciﬁcations CA3018, CA3018A

Electrical Speciﬁcations		T = +25oC (Continued)
			A

														LIMITS

													CA3018			CA3018A

	PARAMETERS				SYMBOL					TEST CONDITIONS		MIN	TYP	MAX	MIN		TYP	MAX	UNITS

Temperature Coefficient:						V		BE		VCE = 3V, IE = 1mA		-	-1.9	-	-		-1.9	-	mV/oC
Temperature Coefficient:						V				VCE = 3V, IE = 1mA		-	-1.9	-	-		-1.9	-	mV/oC
Base-to-Emitter Voltage Q1,

								T
Q2 (Figure 6)								T
Q2 (Figure 6)
Base (Q3)-to-Emitter (Q4)				VBED (V9-1)						VCE = 3V	IE = 10mA	-	1.46	-	-		1.46	1.60	V
Voltage Darlington Pair
Voltage Darlington Pair											IE = 1mA	-	1.32	-	1.10		1.32	1.50	V
(Figure 8)											IE = 1mA	-	1.32	-	1.10		1.32	1.50	V

Temperature Coefficient:						V	BED			VCE = 3V, IE = 1mA		-	4.4	-	-		4.4	-	mV/oC
Temperature Coefficient:						V				VCE = 3V, IE = 1mA		-	4.4	-	-		4.4	-	mV/oC
Base-to-Emitter Voltage
Base-to-Emitter Voltage
Darlington Pair (Q3 and Q4)								T
(Figure 9)

Temperature Coefficient:			V	BE1			− V		BE2	VCC = 6V, VEE = -6V,		-	10	-	-		10	-	μV/oC
Temperature Coefficient:			V				− V			VCC = 6V, VEE = -6V,		-	10	-	-		10	-	μV/oC
Magnitude of Input Offset										IC1 = IC2 = 1mA

								T
Voltage								T
Voltage

DYNAMIC CHARACTERISTICS

Low Frequency Noise Figure						NF				f = 1kHz, VCE = 3V,		-	3.25	-	-		3.25	-	dB
(Figures 10 - 12)										IC = 100μA, Source
										Resistance = 1kΩ

Low Frequency, Small Signal
Equivalent Circuit Characteristics
	Forward Current Transfer					hFE				f = 1kHz, VCE = 3V,		-	110	-	-		110	-	-
	Ratio (Figure 13)									IC = 1mA
	Short Circuit Input					hIE				f = 1kHz, VCE = 3V,		-	3.5	-	-		3.5	-	kΩ
	Impedance (Figure 13)									IC = 1mA
	Open Circuit Output					hOE				f = 1kHz, VCE = 3V,		-	15.6	-	-		15.6	-	μmho
	Impedance (Figure 13)									IC = 1mA
	Open Circuit Reverse					hRE				f = 1kHz, VCE = 3V,		-	1.8 x	-	-		1.8 x	-	-
	Voltage Transfer Ratio									I = 1mA			10-4				10-4
	(Figure 13)									C
	(Figure 13)

Admittance Characteristics
	Forward Transfer					YFE				f = 1MHz, VCE = 3V,		-	31 -	-	-		31 -	-	mmho
	Admittance (Figure 14)									IC = 1mA			j1.5				j1.5
	Input Admittance					YIE				f = 1MHz, VCE = 3V,		-	0.3 +	-	-		0.3 +	-	mmho
	(Figure 15)									IC = 1mA			j0.04				j0.04
	Output Admittance					YOE				f = 1MHz, VCE = 3V,		-	0.001	-	-		0.001	-	mmho
	(Figure 16)									IC = 1mA			+ j0.03				+ j0.03
	Reverse Transfer					YRE				f = 1MHz, VCE = 3V,				See Figure 17					mmho
	Admittance (Figure 17)									IC = 1mA
Gain Bandwidth Product							fT			VCE = 3V, IC = 3mA		300	500	-	300		500	-	MHz
(Figure 18)

Emitter-to-Base Capacitance						CEB				VEB = 3V, IE = 0		-	0.6	-	-		0.6	-	pF
Collector-to-Base Capacitance						CCB				VCB = 3V, IC = 0		-	0.58	-	-		0.58	-	pF
Collector-to-Substrate						CCI				VCI = 3V, IC = 0		-	2.8	-	-		2.8	-	pF
Capacitance

NOTE:

1.The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal 10) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

2.Actual forcing current is via the emitter for this test.

6-7

CA3018, CA3018A

Typical Performance Curves

	102	IE = 0
		IE = 0
(nA)	10
(nA)			VCB = 15V
CURRENT			VCB = 15V
	1		VCB = 10V
	1		VCB = 5V
			VCB = 5V

CUTOFF	10-1
CUTOFF	10-2
COLLECTOR	10-2
	10-3

	10-4
	0	25	50	75	100	125
			AMBIENT TEMPERATURE (oC)

FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE

	103	IB = 0
		IB = 0
(nA)	102
CURRENT			VCE = 10V
			VCE = 10V
	10
CUTOFF		VCE = 5V
CUTOFF	1
COLLECTOR	1
COLLECTOR	10-1
	10-1
	10-2
	10-3
	0	25	50	75	100	125

AMBIENT TEMPERATURE (oC)

FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT vs TEMPERATURE

TRANSFER RATIO (hFE)

STATIC FORWARD CURRENT

120

VCE = 3V

110

TA = +25oC

hFE

100

h F E 1

O R

h F E 2

F E 2

F E 1

50	0.1	1
0.01

EMITTER CURRENT (mA)

1.1
1
	RATIO
0.9	BETA
0.9
0.8
10

FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO AND BETA RATIO FOR TRANSISTORS Q1 AND Q2 vs EMITTER CURRENT

)
FED	8000
(h			VCE = 3V
CURRENTFORWARDSTATIC DARLINGTONFORRATIOTRANSFERPAIR			VCE = 3V
	7000		T	= +25oC
	7000		A
	6000
	6000
	5000
	5000
	4000
	4000
	3000
	3000
	2000
	2000
	1000
	1000
	0
	0	0.1		1	10
		0.1		1	10

EMITTER CURRENT (mA)

FIGURE 4. TYPICAL STATIC FORWARD CURRENT - TRANSFER

RATIO FOR DARLINGTON CONNECTED TRANSISTORS Q3 AND Q4 vs EMITTER CURRENT

BASE-TO-EMITTER VOLTAGE (V)

0.8

VCE = 3V TA = +25oC

0.7

VBE

0.6

0.5

VIO = |VBE1 - VBE2|

0.4

0.01 0.1 1.0 EMITTER CURRENT (mA)

Q2ANDQ1VOLTAGE(mV)	(V)VOLTAGEEMITTER	VCE = 3V
Q2ANDQ1VOLTAGE(mV)	(V)VOLTAGEEMITTER	1.0
		1.0
		0.9
		0.8
		0.7
OFFSETINPUT	TO-BASE-	0.6	IE = 3mA
OFFSETINPUT	TO-BASE-			IE = 1mA


		0.5		IE = 0.5mA
		0.5
		0.4
		-75	-50	-25	0	25	50	75	100	125
				AMBIENT TEMPERATURE (oC)

FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE	FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC AND INPUT OFFSET VOLTAGE	CHARACTERISTIC FOR EACH TRANSISTOR vs
FOR Q1 AND Q2 vs EMITTER CURRENT	TEMPERATURE

6-8

CA3018, CA3018A

Typical Performance Curves (Continued)

	5
	5	VCE = 3V
		VCE = 3V
	4
(mV)							IE = 10mA
							IE = 10mA
	3
VOLTAGE	3
VOLTAGE	2
	0.75

OFFSET								IE = 1mA
								IE = 1mA
	0.50
	0.50

	0.25						IE = 0.1mA
	0.25						IE = 0.1mA
	0
	0
	-75 -50		-25		0 25	50 75 100 125
				AMBIENT TEMPERATURE (oC)

FIGURE 7. TYPICAL OFFSET VOLTAGE CHARACTERISTIC vs

		TEMPERATURE
		2
VOLTAGE	PAIR (V)	VCE = 3V
		1.75						IE = 3mA
		1.75

-TO-EMITTER	DARLINGTON	1.50						IE = 1mA
		1.50
								IE = 0.5mA
		1.25
BASE	FOR	1.25
BASE	FOR
		1
		0.75
		-75	-50	-25	0	25	50	75	100	125

AMBIENT TEMPERATURE (oC)

FIGURE9. TYPICALSTATICINPUTVOLTAGECHARACTERISTIC FOR DARLINGTON PAIR (Q3 AND Q4) vs

			TEMPERATURE
		VCE = 3V
		RS = 1000Ω
		T	= +25oC
	20	A
	20
(dB)	15		f = 0.1kHz
FIGURE	15
			f = 1kHz

NOISE	10
NOISE			f = 10kHz
	5
	0
	0.01		0.1	1

COLLECTOR CURRENT (mA)

FIGURE 11. NOISE FIGURE vs COLLECTOR CURRENT, RS = 1kΩ

		1.7
		1.7	VCE = 3V
			VCE = 3V
			T	= +25oC
			A
VOLTAGE	(V)PAIR	1.6
		1.6
-TO-EMITTER	DARLINGTON	1.5
		1.5
		1.4
BASE	FOR	1.4
	FOR	1.3
		1.3
		1.2
		1.2
		0.1		1		10
					EMITTER CURRENT (mA)

FIGURE8. TYPICALSTATICINPUTVOLTAGECHARACTERISTIC FOR DARLINGTON PAIR (Q3 AND Q4) vs EMITTER

			CURRENT
		VCE = 3V
		RS = 500Ω
		T	= +25oC
	20	A
	20
(dB)	15		f = 0.1kHz
FIGURE			f = 0.1kHz

			f = 1kHz
NOISE			f = 1kHz
NOISE	10		f = 10kHz
	10

	5
	0
	0.01		0.1	1
			COLLECTOR CURRENT (mA)

FIGURE 10. NOISE FIGURE vs COLLECTOR CURRENT, RS = 500Ω

	30	VCE = 3V
		VCE = 3V
		RS = 10000Ω
	25	T	= +25oC
	25	A
(dB)	20		f = 0.1kHz
(dB)
FIGURE
	15		f = 1kHz

NOISE	10		f = 10kHz
	10

	5
	0
	0.01		0.1	1

COLLECTOR CURRENT (mA)

FIGURE 12. NOISE FIGURE vs COLLECTOR CURRENT, RS = 10kΩ

6-9

								CA3018, CA3018A
Typical Performance Curves (Continued)
	100	VCE = 3V							)		COMMON EMITTER CIRCUIT, BASE INPUT
									)
									FE
		f = 1kHz							FE		TA = +25oC, VCE = 3V, IC = 1mA
		f = 1kHz			hFE = 110			hOE	(g		TA = +25oC, VCE = 3V, IC = 1mA
NORMALIZED h PARAMETERS		TA = +25oC			hFE = 110		AT	hOE	FORWARD TRANSFER CONDUCTANCE	) (mmhos)	40
					hIE = 3.5kΩ		AT
		hIE			hRE = 1.88 x 10-4		1mA				30
	10	hRE			hOE = 15.6μmho
		hRE								FE											gFE
										OR SUSCEPTANCE (b	20										gFE
											10
	1.0							hFE
	1.0										0
											0
								hRE			-10						bFE
											-10						bFE
	0.1							hIE			-20
											-20
											0.1				1					10				100
	0.01			0.1		1.0		10			0.1				1					10				100
			COLLECTOR CURRENT (mA)													FREQUENCY (MHz)
FIGURE 13. h PARAMETERS vs COLLECTOR CURRENT										FIGURE 14. FORWARD TRANSFER ADMITTANCE (YFE)
		6									COMMON EMITTER CIRCUIT, BASE INPUT
		COMMON EMITTER CIRCUIT, BASE INPUT									6
		COMMON EMITTER CIRCUIT, BASE INPUT								)(mmhos)	TA = +25oC, VCE = 3V, IC = 1mA
		T = +25oC, V		CE	= 3V, I = 1mA				)
	(mmhos))	A		CE		C			OE
)		5							OE		5
IE		4							(g		4
INPUT CONDUCTANCE(g	IE								OUTPUTCONDUCTANCE	OE														bOE
	OR SUSCEPTANCE (b	3								OR SUSCEPTANCE(b	3
								bIE			3
								bIE
		2									2
		1				gIE					1
																								gOE
																								gOE
		0									0
		0.1			1	10		100			0.1				1					10				100
						FREQUENCY (MHz)										FREQUENCY (MHz)
		FIGURE 15. INPUT ADMITTANCE (YIE)									FIGURE 16. OUTPUT ADMITTANCE (YOE)
)		COMMON EMITTER CIRCUIT, BASE INPUT
RE		COMMON EMITTER CIRCUIT, BASE INPUT									VCE = 3V
RE			o			= 3V, IC = 1mA					VCE = 3V
(g	(mmhos)	TA = +25 C, VCE				= 3V, IC = 1mA					T		= +25oC
									GAIN BANDWIDTH PRODUCT (MHz)		A
			gRE IS SMALL AT FREQUENCIES								1000
			gRE IS SMALL AT FREQUENCIES								900
				LESS THAN 500MHz							900

REVERSE TRANSFERCONDUCTANCE	)	0									800
	RE	0


	OR SUSCEPTANCE (b							bRE			700
		-0.5						bRE			600
		-0.5

											500
		-1.0									400
											400
											300
		-1.5									200
											100
		-2.0
		-2.0				10		100
		1				10		100			0	1	2	3	4	5	6	7	8	9	10	11	12	13 14
											0	1	2	3	4	5	6	7	8	9	10	11	12	13 14
						FREQUENCY (MHz)									COLLECTOR CURRENT (mA)
	FIGURE 17. REVERSE TRANSFER ADMITTANCE (YRE)								FIGURE 18. TYPICAL GAIN BANDWIDTH PRODUCT (fT) vs
												COLLECTOR CURRENT
									6-10

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