Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

harris / CA3039

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

25.52 Кб

Скачать

☆

S E M I C O N D U C T O R

March 1993

CA3039

Diode Array

Features

•Six Matched Diodes on a Common Substrate

•Excellent Reverse Recovery Time 1ns Typical

•Matched Monolithic Construction

-VF Matched Within 5mV

•Low Diode Capacitance

-CD = 0.65pF Typical at VR = -2V

Applications

•Ultra-Fast Low Capacitance Matched Diodes for Applications in Communications and Switching Systems

•Balanced Modulators or Demodulators

•Ring Modulators

•High Speed Diode Gates

•Analog Switches

Description

The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit construction assures excellent static and dynamic matching of the diodes, making the array extremely useful for a wide variety of applications in communication and switching systems.

Five of the diodes are independently accessible, the sixth shares a common terminal with the substrate.

For applications such as balanced modulators or ring modulators where capacitive balance is important, the substrate should be returned to a DC potential which is signiﬁcantly more negative (with respect to the active diodes) than the peak signal applied.

Ordering Information

PART	TEMPERATURE
NUMBER	RANGE	PACKAGE

CA3039	-55oC to +125oC	12 Pin CAN
CA3039M	-55oC to +125oC	14 Lead SOIC

CA3039M96	-55oC to +125oC	14 Lead SOIC*

* Denotes Tape and Reel

Pinouts

CA3039

(SOIC)

TOP VIEW

	1		14
	2	D5	13	SUBSTRATE
	2		13	SUBSTRATE
	3	DS	12
	D4	DS	D6
	4		11
	5		10
	D3		D1
NC	6	D2	9	NC
		D2
	7		8

	CA3039
	(TO-5 CAN)
	TOP VIEW
		12
	1	11
	2	D5	10
3	D4	D6	9
3	D3	DS	9
	D3	DS
	D2	D1	8
	4		8
	5	7
		6

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.		File Number 343.2

Copyright © Harris Corporation 1993	6-11
	6-11

Speciﬁcations CA3039

Absolute Maximum Ratings					Operating Conditions
Inverse Voltage (PIV) for: D	- D	5 . . . . . . . . . . . . . . . . . . .		. . . . . 5V	Operating Temperature Range . . . . . . . . . . . .	-55oC ≤ T	≤ +125oC
1		5 . . . . . . . . . . . . . . . . . . .				A	≤ +150oC
	D		6 . . . . . . . . . . . . . . . . . . .	. . . . 0.5V	Storage Temperature Range. . . . . . . . . . . . . .	-65oC ≤ T	≤ +150oC
			6 . . . . . . . . . . . . . . . . . . .			A
Diode-to-Substrate Voltage (VDI) for D1 - D5 . . . . . . . . . . .				+20V, -1V
(Terminal 1, 4, 5, 8 or 12 to Terminal 10)
DC Forward Current (IF) . . . .	. . .		. . . . . . . . . . . . . . . . . . . .	. . . 25mA
Recurrent Forward Current (I ) .			. . . . . . . . . . . . . . . . . . . .	. . 100mA
	F
Forward Surge Current (IF(SURGE)) . . . . . . . . . . . . . . . . . . .				. . 100mA
Power Dissipation
Any One Diode Unit . . . . .	. . .		. . . . . . . . . . . . . . . . . . . .	. 100mW
Total for Device . . . . . . . . .	. . .		. . . . . . . . . . . . . . . . . . . .	. 600mW
For T > +55oC . . . . . . . . .	. . .		. . . . . . .Derate Linearly 5.7mW/oC
A				+175oC
Junction Temperature . . . . . .	. . .		. . . . . . . . . . . . . . . . . . . .	+175oC
Junction Temperature (Plastic Package) . . . . . . . . . . . . . .				. +150oC
Lead Temperature (Soldering 10 Sec.). . . . . . . . . . . . . . . .				. +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations T = +25oC. Characteristics apply for each diode unit, Unless Otherwise Speciﬁed

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

DC Forward Voltage Drop (Figure 1)

IF = 50μA

0.65

0.69

IF = 1mA

0.73

0.78

IF = 3mA

0.76

0.80

IF = 10mA

0.81

0.90

DC Reverse Breakdown Voltage

V(BR)R

IR = -10μA

DC Reverse Breakdown Voltage Between Any

V(BR)R

IR = -10μA

Diode Unit and Substrate

DC Reverse (Leakage) Current (Figure 2)

VR = -4V

0.016

100

DC Reverse (Leakage) Current Between Any

VR = -10V

0.022

100

Diode Unit and Substrate (Figure 3)

Magnitude of Diode Offset Voltage (Note 1)

VF1 − VF2

IF = 1mA

0.5

5.0

(Figure 1)

Temperature Coefficient of |VF1 - VF2| (Figure 4)

− V

IF = 1mA

1.0

μV/oC

Temperature Coefficient of Forward Drop

IF = 1mA

-1.9

mV/oC

(Figure 5)

DC Forward Voltage Drop for Anode-to-

IF = 1mA

0.65

Substrate Diode (DS)

Reverse Recovery Time

tRR

IF = 10mA, IR = -10mA

1.0

Diode Resistance (Figure 6)

f = 1kHz, IF = 1mA

Diode Capacitance (Figure 7)

VR = -2V, IF = 0

0.65

Diode-to-Substrate Capacitance (Figure 8)

CDI

VDI = 4V, IF = 0

3.2

NOTE:

1. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.

6-12

CA3039

Typical Performance Curves


		TA = +25oC
	0.8												6	VOLTAGEOFFSETDIODE(mV)
(V)VOLTAGEFORWARDDC													5
(V)VOLTAGEFORWARDDC	0.7			FORWARD VOLTAGE DROP (VF)									5
				FORWARD VOLTAGE DROP (VF)									4
													4
	0.6												3
													3
													2
													2

	0.5			DIODE OFFSET (			VF1 − VF2			)			1


													0


	0.01		0.1						1			10
					DC FORWARD CURRENT (mA)
FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND
				DIODE OFFSET VOLTAGE vs DC FORWARD
				CURRENT
	100
(nA)	10		VR = -10V






CURRENT	1
CURRENT
REVERSEDC
	0.01



	0.1
	0.1
	0.001








	-75		-50 -25			0		25	50		75	100 125
						TEMPERATURE (oC)

FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D1,

	10
(nA)CURRENT	1		VR = -4V
			VR = -4V



REVERSE	0.1



	0.01




DC
	0.001





	-	75	-50	-25	0	25	50	75	100 125
					TEMPERATURE (oC)

FIGURE 2. DC REVERSE (LEAKAGE) CURRENT (D1 - D5) vs TEMPERATURE

(mV))		4
		4
		3			IF = 10mA
					IF = 10mA


	F2
	V	2
−


	F1
	F1
	V	0.7
(		0.7
(
	VOLTAGE	0.6			IF = 1mA
		0.6
	OFFSET	0.5
		0.5
		0.4
		0.4			IF = 0.1mA
					IF = 0.1mA
	DIODE	0.3
	DIODE	0.3	0	25		50	75	100 125
		-75 -50 -25	0	25		50	75	100 125

TEMPERATURE (oC)

FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs

			D2, D3, D4, D5 AND SUBSTRATE vs TEMPERATURE										TEMPERATURE
												1000			= +25oC
	I	F	= 1mA											T	= +25oC
		F												A
	0.9													f = 1kHz
	0.9
VOLTAGEFORWARDDC (V)	0.8										RESISTANCEDIODE(Ω)	100
VOLTAGEFORWARDDC (V)	0.7										RESISTANCEDIODE(Ω)
	0.7
	0.6											10
	0.5
	0.4											1
	-75		-50	-25	0	25	50	75	100	125		1
	-75		-50	-25	0	25	50	75	100	125		0.01	0.1	1	10
					TEMPERATURE (oC)								DC FORWARD CURRENT (mA)

FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs	FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC FORWARD
TEMPERATURE	CURRENT

6-13

CA3039

Typical Performance Curves (Continued)

	6
	6	T	= +25oC
		T	= +25oC
		A
		IF = 0
(pF)	5
	5

CAPACITANCE	4
	4
DIODE	3
	3
	2
	2
	1
	1

	0		1	2	3	4
			DC REVERSE VOLTAGE ACROSS DIODE (V)

FIGURE 7. DIODE CAPACITANCE (D1 - D5) vs REVERSE VOLTAGE

	6
(pF)	6	T	= +25oC
		T	= +25oC
		A
		A
CAPACITANCE	5	IF = 0
CAPACITANCE

SUBSTRATETO	4
	4
	3
	3
	2
	2
DIODE	1
	1
	0


	0		1	2	3	4

DC REVERSE VOLTAGE BETWEEN TERMINALS 1, 4, 5, 8, OR 12

AND SUBSTRATE (TERMINAL 10) (V)

FIGURE 8. DIODE-TO-SUBSTRATE CAPACITANCE vs REVERSE

VOLTAGE

6-14

Соседние файлы в папке harris

#
06.01.202248.69 Кб68CA3018.PDF
#
06.01.202225.52 Кб66CA3039.PDF
#
06.01.202244.05 Кб66CA3045.PDF
#
06.01.202227.46 Кб66CA3081.PDF
#
06.01.202223.63 Кб66CA3083.PDF
#
06.01.202232.65 Кб66CA3086.PDF
#
06.01.2022129.13 Кб66CA3096.PDF