harris / CA3141
.PDF
S E M I C O N D U C T O R
March 1993
CA3141
High-Voltage Diode Array For Commercial,
Industrial & Military Applications
Features
•Matched Monolithic Construction - VF for Each Diode Pair Matched to Within 0.55mV (Typ) at lF = 1mA
•Low Diode Capacitance - 0.3pF (Typ) at VR = 2V
•High Diode-to-Substrate Breakdown Voltage - 30V (Min)
•Low Reverse (Leakage) Current - 100nA (Max)
Description
The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are internally connected to form three common cathode diode pairs, and the remaining four diodes are internally connected to form two common anode diode pairs. Integrated circuit construction assures excellent static and dynamic matching of the diodes, making the CA3141 extremely useful for a wide variety of applications in communications and switching systems.
Applications
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Balanced Modulators or Demodulators |
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Ordering Information |
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Analog Switches |
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High-Voltage Diode Gates |
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PART |
TEMPERATURE |
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Current Ratio Detectors |
NUMBER |
RANGE |
PACKAGE |
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CA3141E |
-55oC to +125oC |
16 Lead Plastic DIP |
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Pinout
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CA3141 |
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(PDIP) |
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TOP VIEW |
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1 |
D1 |
D10 |
16 |
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2 |
D2 |
D9 |
15 |
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14 |
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4 |
D3 |
D7 |
13 |
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5 |
D4 |
D8 |
12 |
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6 |
11 |
7 |
D5 |
D6 |
10 |
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8 |
9 |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. |
File Number 906.2 |
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Copyright © Harris Corporation 1993
6-52
Specifications CA3141
Absolute Maximum Ratings |
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Operating Conditions |
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Inverse Voltage (PIV) . . . . . . . . . . . . |
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. . . 30V |
Operating Temperature Range . . . . . . . . . . . . |
-55oC ≤ T |
≤ +125oC |
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A |
≤ +150oC |
Peak Diode -to-Substrate Voltage . . . |
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. . 30V |
Storage Temperature Range. . . . . . . . . . . . . . |
-65oC ≤ T |
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Peak Forward Surge Current [IF (Surge)] |
100mA |
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DC Forward Current (IF) . . . . . . . . . . . |
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. 25mA |
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Dissipation: |
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Any One Diode Unit . . . . . . . . . . . . |
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50mW |
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Total Package: |
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Up to 55oC . . . . . . . . . . . . . . . . . . . |
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650mW |
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For T > 55oC . . . . . . . . . . . . . . . . . |
Derate Linearly at 6.67mW/oC |
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A |
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+175oC |
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Junction Temperature . . . . . . . . . . . . . |
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Junction Temperature (Plastic Package) . . . . . . . . . . . . . . . |
+150oC |
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Lead Temperature (Soldering 10 Sec.). . . . . . . . . . . . . . . . . |
+300oC |
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CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T = +25oC |
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LIMITS |
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PARAMETERS |
SYMBOL |
TEST CONDITIONS |
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UNITS |
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DC Forward Voltage Drop |
VF |
IF (Anode) 100μA |
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0.9 |
V |
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1mA |
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10mA |
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V |
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DC Reverse Breakdown Voltage |
V(BR)R |
IF = -10μA |
30 |
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DC Breakdown Voltage Between Any Diode and |
V(BR)DI |
IDI = 10μA |
30 |
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Substrate |
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DC Reverse (Leakage) Current |
IR |
VF = -20V |
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100 |
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DC Reverse (Leakage) Current Between Any Diode |
IDI |
VDI = 20V |
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100 |
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and Substrate |
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Magnitude of Diode Offset Voltage Between Diode Pairs |
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VDI = 20V, IFA = 1mA |
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Temperature Coefficient of Forward Voltage Drop |
VF/ T |
IF = 1mA |
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mV/oC |
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Reverse Recovery Time |
tRR |
IF = 2mA, IR = 2mA |
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50 |
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ns |
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Diode Capacitance |
CD |
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See Figure 4 |
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pF |
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Diode Anode-to-Substrate Capacitance |
CDAI |
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See Figure 5 |
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pF |
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Diode Cathode-to-Substrate Capacitance |
CDCI |
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See Figure 6 |
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pF |
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Magnitude of Cathode-to-Anode Current Ratio |
|IFC/IFA| |
IFA = 1mA, VDS = 10V |
0.9 |
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0.96 |
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Typical Performance Curves
DC FORWARD VOLTAGE DROP (V)
1 |
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1.2 |
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T |
= +25oC |
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A |
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0.8 |
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(V) |
1 |
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0.6 |
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DROP |
0.8 |
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IF = 10mA |
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VOLTAGE |
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IF = 3mA |
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0.6 |
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IF = 1mA |
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IF = 300μA |
0.4 |
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FORWARD |
0.2 |
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IF = 100μA |
0.2 |
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IF = 100nA |
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0.4 |
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IF = 10μA |
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IF = 1μA |
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DC |
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0 |
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102 |
103 |
104 |
0 |
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0.1 |
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10 |
-100 |
-50 |
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100 |
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TEMPERATURE (oC) |
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FORWARD CURRENT ( A) |
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FIGURE 1. DC FORWARD VOLTAGE DROP vs FORWARD |
FIGURE 2. DC FORWARD VOLTAGE DROP vs |
CURRENT |
TEMPERATURE |
6-53
CA3141
Typical Performance Curves (Continued)
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T |
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+25oC |
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2.5 |
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|VF1 - VF2| , |VF3 - VF4| , |VF5 - VF6| |
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(mV) |
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|VF7 - VF8| , |VF9 - VF10| |
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VOLTAGE |
2 |
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OFFSET |
1.5 |
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DIODE |
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0.5 |
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MAGNITUDE OF ANODE CURRENT (μA) |
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FIGURE 3. DIODE OFFSET VOLTAGE vs MAGNITUDE OF |
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ANODE CURRENT |
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1.6 |
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+25 |
oC |
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SUBSTRATE-TO-ANODEDIODE (pF)CAPACITANCE |
1.5 |
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1.4 |
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ANODE (TERMS. 2, 8, 11, 16) |
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1.3 |
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1.2 |
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1.1 |
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ANODE (TERM. 1) |
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0.9 |
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0.8 |
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ANODE (TERM. 15) |
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0.6 |
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0.5 |
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ANODE (TERMS. 4, 5) |
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ANODE-TO-SUBSTRATE DC REVERSE VOLTAGE (V)
FIGURE 5. DIODE ANODE-TO-SUBSTRATE CAPACITANCE vs REVERSE VOLTAGE
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CURRENT |
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(CATHODE) |
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FORWARD |
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0.01 |
0.1 |
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FORWARD (ANODE) CURRENT (mA)
FIGURE 7. FORWARD (CATHODE) CURRENT vs FORWARD (ANODE) CURRENT
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1.2 |
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CAPACITANCE |
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D7, D8 |
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D5, D9 |
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15 |
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CATHODE-TO-ANODE DC REVERSE VOLTAGE (V)
FIGURE 4. DIODE CAPACITANCE vs CATHODE-TO-ANODE REVERSE VOLTAGE
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T = +25oC |
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SUBSTRATE-TO-CATHODE |
(pF)CAPACITANCE |
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4 |
CATHODE (TERMS. 3, 6, 14) |
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DIODE |
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CATHODE (TERMS. 7, 10, 12, 13) |
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0 5 10 15 20 CATHODE-TO-SUBSTRATE DC REVERSE VOLTAGE (V)
FIGURE 6. DIODE CATHODE-TO-SUBSTRATE CAPACITANCE vs CATHODE-TO-SUBSTRATE DC REVERSE VOLTAGE
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105 |
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(pA) |
104 |
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DIODE-TO-SUBSTRATE |
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CURRENT |
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LEAKAGE |
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LEAKAGE CURRENT |
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DIODE REVERSE |
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0.1 |
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-100 |
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0 |
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100 |
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FIGURE 8. DC LEAKAGE CURRENT vs TEMPERATURE
6-54