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®	OPT202

FPO

PHOTODIODE

WITH ON-CHIP AMPLIFIER

FEATURES

●BANDWIDTH: 50kHz

●PHOTODIODE SIZE: 0.090 x 0.090 inch (2.29 x 2.29mm)

●1MΩ FEEDBACK RESISTOR

●HIGH RESPONSIVITY: 0.45A/W (650nm)

●LOW DARK ERRORS: 2mV

●WIDE SUPPLY RANGE: ±2.25 to ±18V

●LOW QUIESCENT CURRENT: 400μA

●TRANSPARENT 8-PIN DIP AND 5-PIN SIP

●HERMETIC 8-PIN CERAMIC DIP

APPLICATIONS

●MEDICAL INSTRUMENTATION

●LABORATORY INSTRUMENTATION

●POSITION AND PROXIMITY SENSORS

●PHOTOGRAPHIC ANALYZERS

●SMOKE DETECTORS

2	(Pin available on DIP only)
				1MΩ		4	(4)
						4	(4)
			3pF
λ					175Ω	5
						5	VO
						(5)	VO
						(5)
					OPT202
(1)	8	(2)	1	(3)	3
			V+	V–
				(SIP)	DIP

DESCRIPTION

The OPT202 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The transimpedance amplifier consists of a precision FETinput op amp and an on-chip metal film resistor. The 0.09 x 0.09 inch photodiode is operated at zero bias for excellent linearity and low dark current.

The integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs such as leakage current errors, noise pick-up and gain peaking due to stray capacitance.

The OPT202 operates over a wide supply range (±2.25 to ±18V) and supply current is only 400μA. It is

packaged in a transparent plastic 8-pin DIP or 5-pin SIP, specified for the 0°C to +70°C temperature range

as well as a hermetic ceramic 8-pin DIP with a glass window, specified for the –40°C to +85°C tempera-

ture range.

SPECTRAL RESPONSIVITY

		Ultraviolet			Blue	Green	Yellow	Red		Infrared		Responsivity (A/W)
	0.5				Blue						0.5
	0.5										0.5
Output (V/µW)	0.4		Using Internal								0.4
	0.4		1MΩ Resistor								0.4
			1MΩ Resistor
	0.3										0.3

Voltage	0.2										0.2	Photodiode
	0.1										0.1

	0										0
	100	200	300	400	500		600	700	800	900	1000 1100

Wavelength (nm)

International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132

PDS-1200E	OPT202
1

SPECIFICATIONS

ELECTRICAL

At TA = +25°C, VS = ±15V, λ = 650nm, internal 1MΩ feedback resistor, unless otherwise noted.

				OPT202P, W, G

PARAMETER		CONDITIONS	MIN	TYP	MAX		UNITS
RESPONSIVITY
RESPONSIVITY
Photodiode Current		650nm		0.45			A/W
Voltage Output		650nm		0.45			V/μW
vs Temperature				100			ppm/°C
Unit-to-Unit Variation		650nm		±5		%
Nonlinearity(1)		FS Output = 10V		0.01			% of FS
Photodiode Area		(0.090 x 0.090in)		0.008			in2
		(2.29 x 2.29mm)		5.2			mm2

DARK ERRORS, RTO(2)				±0.5	±2
Offset Voltage, Output: P, W Packages				±0.5	±2		mV
	G Package			±0.5	±3		mV
vs Temperature				±10			μV/°C
vs Power Supply		VS = ±2.25V to ±18V		10	100		μV/V
Voltage Noise		Measured BW = 0.1Hz to 100kHz		1			mVrms

RESISTOR—1M Ω Internal							MΩ
Resistance				1			MΩ
Tolerance: P, G Packages				±0.5	±2	%
	W Package			±0.5		%
vs Temperature				50			ppm/°C

FREQUENCY RESPONSE
Bandwidth, Large or Small-Signal, –3dB				50			kHz
Rise Time, 10% to 90%				10			μs
Settling Time, 1%		FS to Dark		10			μs
	0.1%	FS to Dark		20			μs
	0.01%	FS to Dark		40			μs
Overload Recovery Time (to 1%)		100% Overdrive, VS = ±15V		44			μs
		100% Overdrive, VS = ±5V		100			μs
		100% Overdrive, VS = ±2.25V		240			μs

OUTPUT		RL = 10kΩ
Voltage Output		RL = 10kΩ	(V+) – 1.25	(V+) – 1			V
		RL = 5kΩ	(V+) – 2	(V+) – 1.5			V
Capacitive Load, Stable Operation				10			nF
Short-Circuit Current				±18			mA

POWER SUPPLY				±15
Specified Operating Voltage			±2.25	±15	±18		V
Operating Voltage Range			±2.25		±18		V
Quiescent Current		VO = 0		±400	±500		μA

TEMPERATURE RANGE							°C
Specification; P, W Packages			0		+70		°C
	G Package		–40		+85		°C
Operating,	P, W Packages		0		+70		°C
	G Package		–55		+125		°C
Storage	P, W Packages		–25		+85		°C
	G Package		–55		+125		°C
Thermal Resistance, θJA				100			°C/W

NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.

	OPT202	2

SPECIFICATIONS (CONT)

ELECTRICAL

Op Amp Section of OPT202(1)

At TA = +25°C, VS = ±15V, unless otherwise noted.

OPT202 Op Amp

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

INPUT

Offset Voltage

±0.5

vs Temperature

±5

mV/°C

vs Power Supply

VS = ±2.25V to ±18V

mV/V

Input Bias Current

vs Temperature

doubles every 10°C

NOISE

Input Voltage Noise

Voltage Noise Density, f = 10Hz

nV/Ö

f = 100Hz

nV/Ö

f = 1kHz

nV/Ö

Current Noise Density, f = 1kHz

0.8

fA/Ö

INPUT VOLTAGE RANGE

Common-Mode Input Range

±14.4

Common-Mode Rejection

106

INPUT IMPEDANCE

Differential

1012||3

W || pF

Common-Mode

1012||3

W || pF

OPEN-LOOP GAIN

Open-Loop Voltage Gain

120

FREQUENCY RESPONSE

Gain-Bandwidth Product

MHz

Slew Rate

V/ms

Settling Time 0.1%

0.01%

OUTPUT

Voltage Output

RL = 10kW

(V+) – 1.25

(V+) – 1

RL = 5kW

(V+) – 2

(V+) – 1.5

Short-Circuit Current

±18

POWER SUPPLY

Specified Operating Voltage

±15

Operating Voltage Range

±2.25

±18

Quiescent Current

IO = 0

±400

±500

NOTE: (1) Op amp specifications provided for information and comparison only.

PHOTODIODE SPECIFICATIONS

At TA = +25°C, unless otherwise noted.

			Photodiode of OPT202

PARAMETER	CONDITIONS	MIN	TYP	MAX	UNITS
					in2
Photodiode Area	(0.090 x 0.090in)		0.008		in2
	(2.29 x 2.29mm)		5.2		mm2
Current Responsivity	650nm		0.45		A/W
Dark Current	VD = 0V(1)		500		fA
vs Temperature			doubles every 10°C
Capacitance	VD = 0V(1)		600		pF

NOTE: (1) Voltage Across Photodiode.

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.

3	OPT202

PIN CONFIGURATIONS

Top View					DIP

V+	1			8	Common


–In	2		(1)	7	NC


V–	3			6	NC
1MΩ Feedback

	4			5	Output


NOTE: (1) Photodiode location.

Top View					SIP

Common		1


V+		2


V–		3	(1)
1MΩ Feedback

		4


Output		5

ABSOLUTE MAXIMUM RATINGS

Supply Voltage ...................................................................................		±18V
Input Voltage Range (Common Pin)		.................................................... ±VS
Output Short-Circuit (to ground) ...............................................		Continuous
Operating Temperature: P, W ...........................................		–25 ° C to +85°C
	G .............................................	–55 ° C to +125°C
Storage Temperature:	P, W ...........................................	–25 ° C to +85°C
	G .............................................	–55 ° C to +125°C
Junction Temperature:	P, W ..........................................................	+85°C
	G .............................................................	+150°C
Lead Temperature (soldering, 10s) ................................................		+300°C

(Vapor-Phase Soldering Not Recommended on Plastic Packages)

PACKAGE INFORMATION

		PACKAGE DRAWING
PRODUCT	PACKAGE	NUMBER(1)
OPT202P	8-Pin Plastic DIP	006-1
OPT202W	5-Pin Plastic SIP	321
OPT202G	8-Pin Ceramic DIP	161-1

NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.

ELECTROSTATIC DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

MOISTURE SENSITIVITY AND SOLDERING

Clear plastic does not contain the structural-enhancing fillers used in black plastic molding compound. As a result, clear plastic is more sensitive to environmental stress than black plastic. This can cause difficulties if devices have been stored in high humidity prior to soldering. The rapid heating during soldering can stress wire bonds and cause failures. Prior to

soldering, it is recommended that plastic devices be baked-out at 85°C for 24 hours.

The fire-retardant fillers used in black plastic are not compatible with clear molding compound. The OPT202 plastic packages cannot meet flammability test, UL-94.

	OPT202	4

TYPICAL PERFORMANCE CURVES

At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.

NORMALIZED SPECTRAL RESPONSIVITY

Output	1.0
	0.8								(0.48A/W)

Voltage							650nm
							650nm
							(0.45A/W)
	0.6
or	0.6
or
Current	0.4
Current
Normalized	0.2
Normalized	0
	0
	100	200	300	400	500	600	700	800	900	1000 1100
					Wavelength (nm)

VOLTAGE RESPONSIVITY vs IRRADIANCE

	10
(V)	1		Ω
(V)		=	10M
Voltage		=	10M
	R	F			Ω
	R				Ω
	0.1			=	1M		Ω
	0.1			=
			R	F
Output				F
							100k
						=	100k
	0.01				R	F


									λ = 650nm
									λ = 650nm
	0.001
	0.001	0.01					0.1	1	10	100
						Irradiance (W/m2)

VOLTAGE RESPONSIVITY vs RADIANT POWER

	10
	1			Ω
(V)	1			10M
(V)			=	10M
Voltage		R	F			Ω
		R

	0.1				=	1M		Ω
	0.1			R	F			Ω
Output				R				100k
							=	100k
						R	F		λ = 650nm
						R
	0.01
	0.01
	0.001
	0.01			0.1				1	10	100	1k
								Radiant Power (µW)

VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY

	10	RF	= 10MΩ
		RF	= 10MΩ		λ = 650nm
		RF = 3.3MΩ			λ = 650nm
		RF = 3.3MΩ
(V/µW)	1			RF = 1MΩ
(V/µW)
Responsivity	0.1	RF = 330kΩ CEXT = 3pF
	0.1

	0.01
	0.001
	100	1k	10k	100k	1M	10M
			Frequency (Hz)

RESPONSE vs INCIDENT ANGLE

	1.0
	0.8	θX	SIP Package	θY		θX
	0.8		SIP Package		θY
Response

	0.6

Relative	0.4	θX	Plastic	θY
	0.4	θX	DIP Package	θY

	0.2
	0
		0	±20		±40	±60
				Incident Angle (°)

				RESPONSE vs INCIDENT ANGLE
1.0		1.00
		0.90
0.8		0.80
	Output	0.70					θX and θY
0.6	Output	0.60					θX and θY
0.6		0.60
	Relative	0.50	θX			θY
0.4	Relative	0.40		Ceramic
				Ceramic
				DIP Package
				DIP Package
		0.30
0.2		02.0
		0.10
0		0
±80		0	10	20	30	40	50	60	70	80	90
					Angle of Incidence

5	OPT202

TYPICAL PERFORMANCE CURVES

At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.

QUIESCENT CURRENT vs TEMPERATURE

	0.6
	0.6
	0.5

(mA)							VS = ±15V
							VS = ±15V
	0.4
Current	0.4
	0.3

			V	S = ±2.25V
Quiescent			V							Dice
	0.2



	0.1


	0

		–50	–25		0	25		50	75	100	125
	–75	–50	–25		0	25		50	75	100	125
					Temperature (°C)

(CONT)

			OUTPUT NOISE VOLTAGE
			vs MEASUREMENT BANDWIDTH
	10–2
		Dotted lines indicate
	10–3	noise measured beyond
(Vrms)	10–3	the signal bandwidth.
(Vrms)	10–4		RF = 10MΩ
Voltage	10–5	RF = 100MΩ
Noise					RF = 100kΩ
Noise	10–6				RF = 1MΩ
	10–6
	10–7
	1	10	100	1k	10k	100k	1M
			Frequency (Hz)

SMALL-SIGNAL RESPONSE

LARGE-SIGNAL RESPONSE

20mV/div

10μs/div

NOISE EFFECTIVE POWER

vs MEASUREMENT BANDWIDTH

10–7

Dotted lines indicate

RF = 100kΩ

10–8

noise measured beyond

the signal bandwidth.

RF = 1MΩ

(W)

10–9

= 650nm

RF = 10MΩ

Power

10–10

RF = 100MΩ

EffectiveNoise

10–12

10–11

10–13

10–14

100

10k

100k

Frequency (Hz)

Units (%)

2V/div

10μs/div

DISTRIBUTION OF RESPONSIVITY

λ = 650nm

Distribution Totals

100%

Laboratory Test

Data

0.43

0.44

0.45

0.46

0.47

0.48

Responsivity (A/W)

	OPT202	6

APPLICATIONS INFORMATION

Figure 1 shows the basic connections required to operate the OPT202. Applications with high-impedance power supplies may require decoupling capacitors located close to the device pins as shown. Output is zero volts with no light and increases with increasing illumination.

(Pin available on DIP only)

		1MΩ	RF
ID is proportional	(0V)	3pF	ID
	(0V)	3pF

to light intensity
(radiant power).			175Ω
λ	ID		175Ω
	ID		VO
			VO
			VO = ID RF
			VO = ID RF
			OPT202
		0.1µF 0.1µF

+15V –15V

FIGURE 1. Basic Circuit Connections.

Photodiode current, ID, is proportional to the radiant power or flux (in watts) falling on the photodiode. At a wavelength of 650nm (visible red) the photodiode Responsivity, RI, is approximately 0.45A/W. Responsivity at other wavelengths is shown in the typical performance curve “Responsivity vs Wavelength.”

The typical performance curve “Output Voltage vs Radiant Power” shows the response throughout a wide range of radiant power. The response curve “Output Voltage vs Irradiance” is based on the photodiode area of 5.23 x 10–m6 2.

The OPT202’s voltage output is the product of the photodiode current times the feedback resistor, (IDRF). The internal feedback resistor is laser trimmed to 1MΩ ±2%. Using this

resistor, the output voltage responsivity, RV, is approximately 0.45V/μW at 650nm wavelength.

An external resistor can be connected to set a different

voltage responsivity. Best dynamic performance is achieved by connecting REXT in series (for RF > 1MΩ), or in parallel (for RF < 1MΩ), with the internal resistor as shown in

Figure 2. Placing the external resistor in parallel with the internal resistor requires the DIP package. These connections take advantage of on-chip capacitive guarding of the internal resistor, which improves dynamic performance. For values of RF less than 1MΩ, an external capacitor, CEXT, should be connected in parallel with RF (see Figure 2). This capacitor eliminates gain peaking and prevents instability. The value of CEXT can be read from the table in Figure 2.

LIGHT SOURCE POSITIONING

The OPT202 is 100% tested with a light source that uniformly illuminates the full area of the integrated circuit, including the op amp. Although all IC amplifiers are light-sensitive to

some degree, the OPT202 op amp circuitry is designed to minimize this effect. Sensitive junctions are shielded with metal, and differential stages are cross-coupled. Furthermore, the photodiode area is very large relative to the op amp input circuitry making these effects negligible.

If your light source is focused to a small area, be sure that it is properly aimed to fall on the photodiode. If a narrowly focused light source were to miss the photodiode area and fall only on the op amp circuitry, the OPT202 would not perform properly. The large (0.090 x 0.090 inch) photodiode area allows easy positioning of narrowly focused light sources. The photodiode area is easily visible—it appears very dark compared to the surrounding active circuitry.

The incident angle of the light source also affects the apparent sensitivity in uniform irradiance. For small incident angles, the loss in sensitivity is simply due to the smaller effective light gathering area of the photodiode (proportional to the cosine of the angle). At a greater incident angle, light is diffused by the side of the package. These effects are shown in the typical performance curve “Response vs Incident Angle.”

For RF > 1MΩ
	1MΩ	RF = REXT + 1MΩ
		REXT
λ		175Ω
λ		VO = ID RF
		VO = ID RF
		OPT202
V+	V–

CEXT

For RF < 1MΩ	2	RF = REXT \|\| 1MΩ		REXT
			1MΩ		4
					4
		3pF
λ				175Ω	5
					5
					VO = ID RF
					VO = ID RF
				OPT202	Circuit Requires
	8	1		3	Circuit Requires
	8	1		3	DIP Package
					DIP Package
		V+	V–
	EQUIVALENT RF			CEXT
		100MΩ		(1)
		10MΩ		(1)
		10MΩ
		1MΩ		(1)
		330kΩ		2pF
		≤100kΩ		(2)
		≤100kΩ

NOTES: (1) No CEXT required. (2) Not recommended due to possible

op amp instability.

FIGURE 2. Using External Feedback Resistor.

7	OPT202

DARK ERRORS

The dark errors in the specification table include all sources. The dominant error source is the input offset voltage of the op amp. Photodiode dark current and input bias current of the op amp are in the 2pA range and contribute virtually no

offset error at room temperature. Dark current and input bias current double for each 10°C above 25°C. At 70°C, the error

current can be approximately 100pA. This would produce a 1mV offset with RF = 10MΩ. The OPT202 is useful with

feedback resistors of 100MΩ or greater at room temperature. The dark output voltage can be trimmed to zero with the optional circuit shown in Figure 3.

When used with very large feedback resistors, tiny leakage currents on the circuit board can degrade the performance of the OPT202. Careful circuit board design and clean assembly procedures will help achieve best performance. A “guard ring” on the circuit board can help minimize leakage to the critical non-inverting input (pin 2). This guard ring should encircle pin 2 and connect to Common, pin 8.

		1MΩ
	3pF
V+	λ	175Ω
		VO
100µA
100µA		OPT202
1/2 REF200		OPT202
100Ω	V+	V–
	500Ω
100Ω	0.01µF
100µA
1/2 REF200	Adjust dark output for 0V.
	Adjust dark output for 0V.
	Trim Range: ±7mV
V–

FIGURE 3. Dark Error (Offset) Adjustment Circuit.

LINEARITY PERFORMANCE

Current output of the photodiode is very linear with radiant power throughout a wide range. Nonlinearity remains below approximately 0.01% up to 100μA photodiode current. The photodiode can produce output currents of 10mA or greater with high radiant power, but nonlinearity increases to several percent in this region.

This very linear performance at high radiant power assumes that the full photodiode area is uniformly illuminated. If the light source is focused to a small area of the photodiode, nonlinearity will occur at lower radiant power.

DYNAMIC RESPONSE

Using the internal 1MΩ resistor, the dynamic response of the photodiode/op amp combination can be modeled as a

simple R/C circuit with a –3dB cutoff frequency of 50kHz. This yields a rise time of approximately 10μs (10% to 90%). Dynamic response is not limited by op amp slew rate. This is demonstrated by the dynamic response oscilloscope photographs showing virtually identical large-signal and small-signal response.

Dynamic response will vary with feedback resistor value as shown in the typical performance curve “Voltage Output Responsivity vs Frequency.” Rise time (10% to 90%) will vary according to the –3dB bandwidth produced by a given feedback resistor value—

t	≈	0. 35	(1)
		f
R

where:

tR is the rise time (10% to 90%) fC is the –3dB bandwidth

NOISE PERFORMANCE

Noise performance of the OPT202 is determined by the op amp characteristics in conjunction with the feedback components and photodiode capacitance. The typical performance curve “Output Noise Voltage vs Measurement Bandwidth” shows how the noise varies with R F and measured bandwidth (1Hz to the indicated frequency). The signal bandwidth of the OPT202 is indicated on the curves. Noise can be reduced by filtering the output with a cutoff frequency equal to the signal bandwidth.

Output noise increases in proportion to the square-root of the feedback resistance, while responsivity increases linearly with feedback resistance. So best signal-to-noise ratio is achieved with large feedback resistance. This comes with the trade-off of decreased bandwidth.

The noise performance of a photodetector is sometimes characterized by Noise Effective Power (NEP). This is the radiant power which would produce an output signal equal to the noise level. NEP has the units of radiant power (watts). The typical performance curve “Noise Effective Power vs Measurement Bandwidth” shows how NEP varies with RF and measurement bandwidth.

	1MΩ	RF
3pF
		Gain Adjustment
		+50%; –0%
λ		175Ω
λ		VO
		VO
		OPT202
		5kΩ
V+	V–	10kΩ

FIGURE 4. Responsivity (Gain) Adjustment Circuit.

	OPT202	8

	1MΩ	RF
3pF					R1 + R2
		V	O	=	R1 + R2	I	D	R	F
			O		R2		D		F
					R2
λ		175Ω
λ				R1
				R1
		OPT202	19kΩ
V+	V–			R2
V+	V–			1kΩ
				1kΩ

Advantages: High gain with low resistor values.

Less sensitive to circuit board leakage.

Disadvantage: Higher offset and noise than by using high value for RF.

FIGURE 5. “T” Feedback Network.

		1MΩ	RF
		3pF
	λ		175Ω
	λ			+
			OPT202	VO = IDRF
V	(1)			–
V	(1)
Z				VZ
		5kΩ		VZ
3.3V		5kΩ		(pesudo-ground)
				(pesudo-ground)
			0.1µF
		V+

NOTE: (1) Zener diode or other shunt regulator.

FIGURE 7. Single Power Supply Operation.

1MΩ		RF
3pF
λ		175Ω
λ
		OPT202
ID			R1
ID	–15V		1kΩ
+15V			1kΩ
+15V
			IO ≤ 5mA
IO = ID	1 +	RF
IO = ID	1 +	R1
		R1

FIGURE 6. Current Output Circuit.

Other application circuits can be seen in the OPT209 data sheet.

	C2
	0.1µF
		R2
		1MΩ
	A1
R3		C1
100kΩ		0.1µF
		R1
	2	1MΩ
	2
	1MΩ	4
		4
	3pF
λ	175Ω	5
		5
		VO
		VO
	OPT202
	8
	20dB/decade

See AB-061 for details.

f–3dB	=	R1
		2πR2R3C2

Circuit requires DIP package.	= 16Hz

FIGURE 8. DC Restoration Rejects Unwanted Steady-State

Background Light.

9	OPT202

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06.01.2022166.25 Кб76opt101.pdf
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06.01.2022118.01 Кб74opt210.pdf
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06.01.2022119.11 Кб74opt211.pdf
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06.01.2022163.46 Кб74opt301.pdf