Nexperia

BAV99 series

High-speed switching diodes

Table 3.

Pinning

Pin

Description

Simplified outline

Graphic symbol

BAV99; BAV99W

1

anode (diode 1)

3

3

2

cathode (diode 2)

Type number

Package

Name

Description

Version

BAV99

-

plastic surface-mounted package; 3 leads

SOT23

BAV99S

SC-88

plastic surface-mounted package; 6 leads

SOT363

BAV99W

SC-70

plastic surface-mounted package; 3 leads

SOT323

Type number

Marking code[1]

BAV99

A7*

BAV99S

K1*

BAV99W

A7*

BAV99_SER

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© Nexperia B.V. 2017. All rights reserved

Product data sheet

Rev. 8 — 18 November 2010

2 of 14

Nexperia

BAV99 series

High-speed switching diodes

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VRRM

repetitive peak reverse

-

100

V

voltage

VR

reverse voltage

-

100

V

IF

forward current

BAV99

[1]

-

215

mA

[2]

-

125

mA

BAV99S

[1]

-

200

mA

BAV99W

[1]

-

150

mA

[2]

-

130

mA

IFRM

repetitive peak forward

-

500

mA

current

IFSM

non-repetitive peak

square wave

[3]

forward current

tp = 1 μs

-

4

A

tp = 1 ms

-

1

A

tp = 1 s

-

0.5

A

Ptot

total power dissipation

[1][4]

BAV99

Tamb ≤ 25 °C

-

250

mW

BAV99S

Tsp ≤ 85 °C

[5]

-

250

mW

BAV99W

Tamb ≤ 25 °C

-

200

mW

Per device

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

BAV99_SER

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2017. All rights reserved

Product data sheet

Rev. 8 — 18 November 2010

3 of 14

Nexperia

BAV99 series

High-speed switching diodes

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

in free air

[1][2]

junction to ambient

BAV99

-

-

500

K/W

BAV99W

-

-

625

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

BAV99

-

-

360

K/W

BAV99S

[3]

-

-

260

K/W

BAV99W

-

-

300

K/W

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VF

forward voltage

IF = 1 mA

-

-

715

mV

IF = 10 mA

-

-

855

mV

IF = 50 mA

-

-

1

V

IF = 150 mA

-

-

1.25

V

IR

reverse current

VR = 25

V

-

-

30

nA

VR = 80

V

-

-

0.5

μA

VR = 25

V; Tj = 150 °C

-

-

30

μA

VR = 80

V; Tj = 150 °C

-

-

50

μA

Cd

diode capacitance

f = 1 MHz; VR = 0 V

-

-

1.5

pF

trr

reverse recovery time

[1]

-

-

4

ns

VFR

forward recovery voltage

[2]

-

-

1.75

V

BAV99_SER

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2017. All rights reserved

Product data sheet

Rev. 8 — 18 November 2010

4 of 14

Nexperia

BAV99 series

High-speed switching diodes

103

006aab132

102

006aab133

IF

IR

(1)

(μA)

(mA)

10

102

1

(2)

10−1

10

(3)

10−2

1

(1)

(2)

(3)

(4)

10−3

10−4

(4)

10−1

10−5

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

20

40

60

80

100

VF (V)

VR (V)

(1)

Tamb = 150 °C

(1)

Tamb = 150 °C

(2)

Tamb = 85 °C

(2)

Tamb = 85 °C

(3)

Tamb = 25 °C

(3)

Tamb = 25 °C

(4)

Tamb = −40 °C

(4)

Tamb = −40 °C

Fig 1. Forward current as a function of forward

Fig 2. Reverse current as a function of reverse

voltage; typical values

voltage; typical values

0.8

mbg446

102

mbg704

Cd

IFSM

(pF)

0.6

(A)

10

0.4

1

0.2

10−1

0

10

102

103

104

0

4

8

12

VR (V)

16

1

tp (μs)

f = 1 MHz; Tamb = 25 °C

Based on square wave currents.

Tj = 25 °C; prior to surge

Fig 3. Diode capacitance as a function of reverse

Fig 4. Non-repetitive peak forward current as a

voltage; typical values

function of pulse duration; maximum values

BAV99_SER

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2017. All rights reserved

Product data sheet

Rev. 8 — 18 November 2010

5 of 14