Добавил:
Upload Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз: Предмет: Файл:
Скачиваний:
4
Добавлен:
15.03.2016
Размер:
2.11 Mб
Скачать

Serial Downloading

Serial Programming Pin

Mapping

2512G–AVR–03/05

ATmega8515(L)

Both the Flash and EEPROM memory arrays can be programmed using the serial SPI bus while RESET is pulled to GND. The serial interface consists of pins SCK, MOSI (input) and MISO (output). After RESET is set low, the Programming Enable instruction needs to be executed first before program/erase operations can be executed.

Note: In Table 92, the pin mapping for SPI programming is listed. Not all parts use the SPI pins dedicated for the internal SPI interface.

Table 92. Pin Mapping Serial Programming

Symbol

Pins

I/O

Description

 

 

 

 

MOSI

PB5

I

Serial data in

 

 

 

 

MISO

PB6

O

Serial data out

 

 

 

 

SCK

PB7

I

Serial clock

 

 

 

 

Both the Flash and EEPROM memory arrays can be programmed using the serial SPI bus while RESET is pulled to GND. The serial interface consists of pins SCK, MOSI (input) and MISO (output). After RESET is set low, the Programming Enable instruction needs to be executed first before program/erase operations can be executed. NOTE, in Table 92 on page 191, the pin mapping for SPI programming is listed. Not all parts use the SPI pins dedicated for the internal SPI interface.

Figure 84. Serial Programming and Verify(1)

VCC

MOSI

MISO

SCK

XTAL1

RESET

GND

Note: 1. If the device is clocked by the internal Oscillator, it is no need to connect a clock source to the XTAL1 pin.

When programming the EEPROM, an auto-erase cycle is built into the self-timed programming operation (in the Serial mode ONLY) and there is no need to first execute the Chip Erase instruction. The Chip Erase operation turns the content of every memory location in both the Program and EEPROM arrays into $FF.

Depending on CKSEL Fuses, a valid clock must be present. The minimum low and high periods for the serial clock (SCK) input are defined as follows:

Low: > 2 CPU clock cycles for fck < 12 MHz, 3 CPU clock cycles for fck ≥ 12 MHz High: > 2 CPU clock cycles for fck < 12 MHz, 3 CPU clock cycles for fck ≥ 12 MHz

191

Serial Programming

Algorithm

Data Polling Flash

When writing serial data to the ATmega8515, data is clocked on the rising edge of SCK.

When reading data from the ATmega8515, data is clocked on the falling edge of SCK. See Figure 85 for timing details.

To program and verify the ATmega8515 in the Serial Programming mode, the following sequence is recommended (See four byte instruction formats in Table 94.):

1.Power-up sequence:

Apply power between VCC and GND while RESET and SCK are set to “0”. In some systems, the programmer can not guarantee that SCK is held low during Power-up. In this case, RESET must be given a positive pulse of at least two CPU clock cycles duration after SCK has been set to “0”.

2.Wait for at least 20 ms and enable serial programming by sending the Programming Enable serial instruction to pin MOSI.

3.The Serial Programming instructions will not work if the communication is out of synchronization. When in synchronization, the second byte ($53), will echo back when issuing the third byte of the Programming Enable instruction. Whether the echo is correct or not, all four bytes of the instruction must be transmitted. If the $53 did not echo back, give RESET a positive pulse and issue a new Programming Enable command.

4.The Flash is programmed one page at a time. The page size is found in Table 89 on page 181. The memory page is loaded one byte at a time by supplying the 5 LSB of the address and data together with the Load Program memory Page instruction. To ensure correct loading of the page, the data low byte must be loaded before data high byte is applied for a given address. The Program memory Page is stored by loading the Write Program memory Page instruction with the 7 MSB of the address. If polling is not used, the user must wait at least

tWD_FLASH before issuing the next page, see Table 93. Accessing the serial programming interface before the Flash write operation completes can result in incorrect programming.

5.The EEPROM array is programmed one byte at a time by supplying the address and data together with the appropriate Write instruction. An EEPROM memory location is first automatically erased before new data is written. If polling is not

used, the user must wait at least tWD_EEPROM before issuing the next byte, see Table 93. In a chip erased device, no $FFs in the data file(s) need to be programmed.

6.Any memory location can be verified by using the Read instruction which returns the content at the selected address at serial output MISO.

7.At the end of the programming session, RESET can be set high to commence normal operation.

8.Power-off sequence (if needed): Set RESET to “1”.

Turn VCC power off.

When a page is being programmed into the Flash, reading an address location within the page being programmed will give the value $FF. At the time the device is ready for a new page, the programmed value will read correctly. This is used to determine when the next page can be written. Note that the entire page is written simultaneously and any address within the page can be used for polling. Data polling of the Flash will not work for the value $FF, so when programming this value, the user will have to wait for at least

tWD_FLASH before programming the next page. As a chip erased device contains $FF in all locations, programming of addresses that are meant to contain $FF, can be skipped.

See Table 93 for tWD_FLASH value.

192 ATmega8515(L)

2512G–AVR–03/05

 

 

 

 

ATmega8515(L)

 

 

 

 

 

Data Polling EEPROM

 

 

 

When a new byte has been written and is being programmed into EEPROM, reading the

 

 

 

address location being programmed will give the value $FF. At the time the device is

 

 

ready for a new byte, the programmed value will read correctly. This is used to deter-

 

 

mine when the next byte can be written. This will not work for the value $FF, but the user

 

 

should have the following in mind: As a chip erased device contains $FF in all locations,

 

 

programming of addresses that are meant to contain $FF, can be skipped. This does

 

 

not apply if the EEPROM is reprogrammed without chip-erasing the device. In this case,

 

 

data polling cannot be used for the value $FF, and the user will have to wait at least

 

 

tWD_EEPROM before programming the next byte. See Table 93 for tWD_EEPROM value.

 

 

Table 93. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location

 

 

 

 

 

 

Symbol

Minimum Wait Delay

 

 

 

 

 

 

 

tWD_FUSE

 

4.5 ms

 

 

tWD_FLASH

 

4.5 ms

 

 

tWD_EEPROM

 

9.0 ms

 

 

tWD_ERASE

 

9.0 ms

Figure 85. Serial Programming Waveforms

SERIAL DATA INPUT

MSB

LSB

(MOSI)

 

 

SERIAL DATA OUTPUT

MSB

LSB

(MISO)

 

 

SERIAL CLOCK INPUT

 

 

(SCK)

 

 

SAMPLE

 

 

193

2512G–AVR–03/05

Table 94. Serial Programming Instruction Set

 

 

Instruction Format

 

 

Instruction

 

 

 

 

Operation

Byte 1

Byte 2

Byte 3

Byte4

 

 

 

 

 

 

Programming Enable

1010 1100

0101 0011

xxxx xxxx

xxxx xxxx

Enable Serial Programming after

 

 

 

 

 

RESET goes low.

Chip Erase

1010 1100

100x xxxx

xxxx xxxx

xxxx xxxx

Chip Erase EEPROM and Flash.

 

0010 H000

0000 aaaa

bbbb bbbb

oooo oooo

Read H (high or low) data o from

Read Program memory

 

 

 

 

Program memory at word address

 

 

 

 

 

a:b.

 

0100 H000

0000 xxxx

xxxb bbbb

iiii iiii

Write H (high or low) data i to

Load Program memory

 

 

 

 

Program memory page at word

 

 

 

 

address b. Data low byte must be

Page

 

 

 

 

 

 

 

 

loaded before Data high byte is

 

 

 

 

 

 

 

 

 

 

applied within the same address.

 

 

 

 

 

 

Write Program memory

0100 1100

0000 aaaa

bbbx xxxx

xxxx xxxx

Write Program memory Page at

Page

 

 

 

 

address a:b.

Read EEPROM Memory

1010 0000

00xx xxxa

bbbb bbbb

oooo oooo

Read data o from EEPROM

 

 

 

 

 

memory at address a:b.

Write EEPROM Memory

1100 0000

00xx xxxa

bbbb bbbb

iiii iiii

Write data i to EEPROM memory at

 

 

 

 

 

address a:b.

 

0101 1000

0000 0000

xxxx xxxx

xxoo oooo

Read Lock bits. “0” = programmed,

Read Lock bits

 

 

 

 

“1” = unprogrammed. See Table

 

 

 

 

 

81 on page 177 for details.

 

 

 

 

 

 

 

1010 1100

111x xxxx

xxxx xxxx

11ii iiii

Write Lock bits. Set bits = “0” to

Write Lock bits

 

 

 

 

program Lock bits. See Table 81

 

 

 

 

 

on page 177 for details.

 

 

 

 

 

 

Read Signature Byte

0011 0000

00xx xxxx

xxxx xxbb

oooo oooo

Read Signature Byte o at address

 

 

 

 

 

b.

 

1010 1100

1010 0000

xxxx xxxx

iiii iiii

Set bits = “0” to program, “1” to

Write Fuse bits

 

 

 

 

unprogram. See Table 84 on

 

 

 

 

 

page 179 for details.

 

 

 

 

 

 

 

1010 1100

1010 1000

xxxx xxxx

iiii iiii

Set bits = “0” to program, “1” to

Write Fuse High Bits

 

 

 

 

unprogram. See Table 83 on

 

 

 

 

 

page 178 for details.

 

 

 

 

 

 

 

0101 0000

0000 0000

xxxx xxxx

oooo oooo

Read Fuse bits. “0” = programmed,

Read Fuse bits

 

 

 

 

“1” = unprogrammed. See Table

 

 

 

 

 

84 on page 179 for details.

 

 

 

 

 

 

 

0101 1000

0000 1000

xxxx xxxx

oooo oooo

Read Fuse high bits. “0” = pro-

Read Fuse High Bits

 

 

 

 

grammed, “1” = unprogrammed.

 

 

 

 

See Table 83 on page 178 for

 

 

 

 

 

 

 

 

 

 

details.

 

 

 

 

 

 

Read Calibration Byte

0011 1000

00xx xxxx

0000 0000

oooo oooo

Read Calibration Byte

Note: a = address high bits b = address low bits

H = 0 - Low byte, 1 - High Byte o = data out

i = data in

x = don’t care

194 ATmega8515(L)

2512G–AVR–03/05

Тут вы можете оставить комментарий к выбранному абзацу или сообщить об ошибке.

Оставленные комментарии видны всем.

Соседние файлы в папке компоненты_общие