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Казанский национальный исследовательский технологический университет

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2MBi200S-120

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2MBI200S-120	IGBT Module
1200V / 200A 2 in one-package

Features

·High speed switching

·Voltage drive

·Low inductance module structure

Applications

·Inverter for Motor drive

·AC and DC Servo drive amplifier

·Uninterruptible power supply

·Industrial machines, such as Welding machines

Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)						Equivalent Circuit Schematic
Item			Symbol	Rating	Unit	Equivalent Circuit Schematic
Collector-Emitter voltage			VCES	1200	V		C2E1
Gate-Emitter voltaga			VGES	±20	V
Collector	Continuous	Tc=25°C	IC	300	A	C1			E2
current		Tc=80°C		200	A
	1ms	Tc=25°C	IC pulse	600	A
		Tc=80°C		400	A
			-IC	200	A
	1ms		-IC pulse	400	A
Max. power dissipation			PC	1500	W	G1	E1	G2	E2
Operating temperature			Tj	+150	°C	G1	E1	G2	E2
Operating temperature			Tj	+150	°C
Storage temperature			Tstg	-40 to +125	°C
Isolation voltage *1			Vis	AC 2500 (1min. )	V
Screw torque			Mounting *2	3.5	N·m
			Terminals *2	4.5	N·m

*1 : Aii terminals should be connected together when isolation test will be done

*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)

Terminals 3.5 to 4.5 N·m(M6)

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item	Symbol	Characteristics			Conditions		Unit
		Min.	Typ.	Max.
Zero gate voltage collector current	ICES	–	–	1.0	VGE=0V, VCE=1200V		mA
Gate-Emitter leakage current	IGES	–	–	0.4	VCE=0V, VGE=±20V		µA
Gate-Emitter threshold voltage	VGE(th)	5.5	7.2	8.5	VCE=20V, IC=200mA		V
Collector-Emitter saturation voltage	VCE(sat)	–	2.3	2.6	Tc=25° C	VGE=15V, IC=200A	V
		–	2.8	–	Tc=125°C
Input capacitance	Cies	–	24000	–	VGE=0V		pF
Output capacitance	Coes	–	5000	–	VCE=10V
Reverse transfer capacitance	Cres	–	4400	–	f=1MHz
Turn-on time	ton	–	0.35	1.2	VCC=600V		µs
	tr	–	0.25	0.6	IC=200A
	tr(i)	–	0.1	–	VGE=±15V
Turn-off time	toff	–	0.45	1.0	RG=4.7 ohm
	tf	–	0.08	0.3
Forward on voltage	VF	–	2.3	3.0	Tj=25°C	IF=200A, VGE=0V	V
		–	2.0	–	Tj=125°C
Reverse recovery time	trr	–	–	0.35	IF=200A		µs

Thermal resistance characteristics

Item	Symbol	Characteristics			Conditions	Unit
		Min.	Typ.	Max.
Thermal resistance	Rth(j-c)	–	–	0.085	IGBT	°C/W
	Rth(j-c)	–	–	0.18	Diode	°C/W
	Rth(c-f)*2	–	0.025	–	the base to cooling fin	°C/W

*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound

2MBI200S-120

IGBT Module

Characteristics (Representative)

Collector current vs. Collector-Emiiter voltage

Tj= 25°C (typ.)

	500
	400			VGE= 20V15V 12V
	400
[ A ]
Ic	300
:
current								10V
current	200
Collector	200
Collector
	100
	0							8V
	0	1	2	3			4	5
	0	1	2	3			4	5
		Collector - Emitter voltage			:	VCE	[ V ]

Collector current vs. Collector-Emiiter voltage

Tj= 125°C (typ.)

	500
					VGE= 20V 15V		12V
	400
[ A ]
: Ic	300						10V
: Ic							10V
current	200
Collector	200
Collector
	100
							8V
	0	1	2	3		4	5
	0	1	2	3		4	5
		Collector - Emitter voltage			: VCE	[ V ]

		Collector current		vs. Collector-Emiiter voltage
	500		VGE=15V (typ.)
	500
	400			Tj= 25°C	Tj= 125°C
	400					]
						[ V
[ A ]						VCE
Collectorcurrent : Ic	300					Emitter-Collectorvoltage :
Collectorcurrent : Ic	200					Emitter-Collectorvoltage :
	200
	100
	0	1	2	3	4	5
	0	1	2	3	4	5
		Collector - Emitter voltage : VCE			[ V ]

Collector-Emiiter voltage vs. Gate-Emitter voltage

Tj= 25°C (typ.)

	6
	4
		Ic= 400A
	2	Ic= 200A
	2	Ic=100A
		Ic=100A
	0

5	10	15	20	25
	Gate - Emitter voltage :		VGE [ V ]

Capacitance vs. Collector-Emiiter voltage (typ.)	Dynamic Gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25°C	Vcc=600V, Ic=200A, Tj= 25°C

	100000									1000
]									]	800
pF								Cies	[ V
[									VCE
Cres
Cres										600
Capacitance : Cies, Coes,	10000								Collector - Emitter voltage :	600
	10000
	5000									400
										400
								Coes
								Cres		200
	1000							Cres
	1000
	500	5	10	15	20		25	30	35	0
	0	5	10	15	20		25	30	35
			Collector - Emitter voltage			:	VCE	[ V ]

				25
				20
					[ V ]
				15	VGE
				15	:
					:
					voltage
				10	Gate - Emitter
				5	Gate - Emitter
				5
0	500	1000	1500	0
0	500	1000	1500	2000

Gate charge : Qg [ nC ]

2MBI200S-120

IGBT Module

Switching time : ton, tr, toff, tf [ nsec ]

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg= 4.7ohm, Tj= 25°C

1000
500	toff		]
500			[ nsec
			[ nsec
	ton		tr, toff, tf
			ton,
	tr		:
	tr		time
			time
100			Switching
100
	tf
50	100	200	300
0	100	200	300
	Collector current : Ic		[ A ]

Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 4.7ohm, Tj= 125°C

1000
	toff
500
	ton
	tr
	tf
100
50	100	200	300
0	100	200	300
	Collector current : Ic		[ A ]

Switching time vs. Gate resistance (typ.)

Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C

	5000
				ton
				toff
]				tr
tf [ nsec	1000
tr, toff,	500
ton,	500
ton,
:
Switching time	100			tf
	100			tf
	50	10		100
	1	10		100
		Gate resistance	: Rg	[ohm]

Switching loss vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=4.7ohm

	60
]						Eon(125°C)
[ mJ/pulse						Eon(125°C)
[ mJ/pulse	40
Err
Eon, Eoff,						Eon(25°C)
Eon, Eoff,
:						Eoff(125°C)
loss	20					Eoff(125°C)
	20
						Eoff(25°C)
Switching						Eoff(25°C)
						Err(125°C)

						Err(25°C)
	0	100	200			300	400
	0	100	200			300	400
			Collector current	:	Ic	[ A ]

Switching loss vs. Gate resistance (typ.)

Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C

	160
]				Eon
mJ/pulse[	120			]A
	120
Err				Ic [
Eon,:lossSwitchingEoff,	80			currentCollector:
	80
	40			Eoff
				Eoff
				Err
	0	10		100
	1	10		100
		Gate resistance	: Rg	[ohm]

Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>4.7ohm, Tj=<125°C

450

400

350

300

250

200

150

100

200

400

600

800

1000

1200

1400

Collector - Emitter voltage : VCE [ V ]

	2MBI200S-120	IGBT Module
	Forward current vs. Forward on voltage (typ.)	Reverse recovery characteristics (typ.)
	Forward current vs. Forward on voltage (typ.)	Vcc=600V, VGE=±15V, Rg=4.7ohm
		Vcc=600V, VGE=±15V, Rg=4.7ohm

	500							500
	400			Tj=125°C		Tj=25°C
	400
						] ]				Irr(125°C)
						Irr [ A [ nsec				Irr(125°C)
[ A ]	300					Irr [ A [ nsec				trr(125°C)
Forward current : IF	300					Reverse recovery current :	Reverse recovery time : trr	100		Irr(25°C)
										trr(25°C)
	200
	100

	0	1	2		3	4		10	0	100	200	300
	0	1	2		3	4			0	100	200	300
			Forward on voltage	: VF	[ V ]					Forward current : IF		[ A ]

Transient thermal resistance

	1
]				FWD
[ °C/W	0.1
Rth(j-c)	0.1
	0.05			IGBT

:
resistanse	0.01
Thermal
	1E-3	0.01	0.1	1
	0.001	0.01	0.1	1
		Pulse width : Pw [ sec ]
Outline Drawings, mm

mass : 370g

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