Лабораторные работы / Решенная лабораторная по физике 43

Laboratory work N^o 43.

Defining of wide of shutting layer of p-n junction and concentration of impurity in to the area of break down.

Fulfilled by Ptapina I.V.

Checked by __________

Purpose: study the work of diode and mechanism of the avalanche breakdown.

The order of performing a work:

R_b=

Write the results of measurements to the Table1.

Table1.

U₁,V2468101214161820222426U₂,V1.02.23.23.84.04.34.64.64.64.74.74.84.8I, mA

Construct a plots of following dependencies:

U₂= f(U₁) I= f(U₂)

Where  - is a relative dielectric constant of the semiconductor (silicon), is equal 12

₀=8.85*10^-12F/m

U_bd-is a voltage of the breakdown

e- is a electrons charge

a=9*10⁷m^-1, b=1.8*10⁸V*m^-1- experimentally receiving constants

Conclusion: so we have studied the work of diode and mechanism of the avalanche breakdown.