диафрагмированные волноводные фильтры / 09b91d16-15e3-4167-b077-084be97496a3

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Figure 15: Conversion loss (CL) vs. frequency (IF @ 10dBm & LO @ 13dBm).

Figure 16: Output power vs. frequency (IF @ 10dBm & LO @ 13dBm).

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Figure 17: Conversion loss (CL) and output power vs. input power at 160 GHz. (LO @ 13dBm).

The same mixer module could also be used as a D-band receiver with down-converter mode. When the RF input is settled with power of -20 dBm, and IF output is fixed at 2 GHz, RF is changed from 145 GHz to 170 GHz, LO is changed as USB configuration, and the result is shown in the Figure18. For the measurement of the S-parameters by using a network analyzer, there is a good agreement with the chip datasheet at most of the operating frequencies for both up-converter mode and downconverter mode. The mixer module has better CL flatness in the working frequency band compared with chip’s data, which is mainly caused by better wideband matching within the chip packaging.

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Figure 18: Conversion loss (CL) vs. frequency. (RF @ -20dBm & LO @ 13dBm).

Three same modules have been fabricated and measured. The conversion loss with down-conversion modes is shown at Figure 19. There is almost no frequency shifting between different modules and the performance discrepancies are acceptable.

Figure 19: Conversion loss (CL) vs. frequency. Comparison with three modules.

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Conclusions

A GWG based on Glide-Symmetric hole EBG configuration has shown the advantages of non-expensive fabrication, galvanic contact elimination and leakage signal suppression, which makes the technology an excellent candidate to be used in the millimeter and terahertz wave band. In this paper, a D-band IQ mixer MMIC module using this GWG configuration has been achieved by the wire-bond transition from MMIC chip to such GWG without any transfer substrate, making the interconnection low lossy and high efficient. Good agreement of the mixer module with the chip datasheet is achieved, which indicates that the GWG based on the Glide-Symmetric hole configuration and the substrate-less transition used have good frequency performances at D band. The good consistence between multi modules show that the method developed here is highly repeatable and suitable for large scale fabrication.

We have demonstrated that the implementation of mmW/THz active devices is feasible using the proposed integration and packaging solution. Actually, the same method could be used on constructing a whole compact waveguide transceiver system with low cost and high performance which makes the commercialization of mmW/THz application more feasible.

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